Dielectric and Ferroelectric Characterization of Sol-Gel Derived Ca-Doped PbTiO3 Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
G. Teowee ◽  
K.C. McCarthy ◽  
E.K. Franke ◽  
J.M. Boulton ◽  
T.P. Alexander ◽  
...  
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Test System ◽  
Impedance Analyzer ◽  
Si Substrates ◽  
Phase Development ◽  
Pt Electrodes

AbstractA series of sol-gel derived CaTiO3- PbTiO3 thin films ( i.e. Pb1−xCaxTiO3 with x = 0 − 1) was prepared on platinized Si substrates and fired to temperatures ranging from 550C to 650C. Multiple spincoating was performed to obtain films up to 0.5 μm thick with an intermediate firing of 400C between coatings. After the final crystallization firing, top Pt electrodes were sputtered to form monolithic capacitors. These capacitors were subjected to dielectric and ferroelectric characterization using an impedance analyzer and Radiant Technology RT66A Ferroelectric Test System. XRD was used to study the phase development and phase assembly of the fired films. All compositions were single perovskite phase after firing to 600C. The effects of Ca content on the crystallization behavior and ferroelectric properties are discussed.

Dependence of Ferroelectric Properties of SBT Based Capacitors on the Electrode Material

1998 ◽  
Vol 541 ◽  
Author(s):  
S. Tirumala ◽  
S. O. Ryu ◽  
K. B. Lee ◽  
R. Vedula ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrode Material ◽  
Electrode Materials ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Si Substrates ◽  
Non Volatile Memory ◽  
Metal Organic ◽  
Sputter Deposited ◽  
Memory Applications

AbstractThe effect of various electrode materials on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films has been investigated for non-volatile memory applications. Two sets of electrode structures, viz., Pt-Ir based and Pt-Rh based, were sputter deposited in-situ on Si substrates. SBT thin films were deposited on these electrodes using a metal-organic solution deposition technique followed by a post-deposition anneal at 750 °C in oxygen. Structural characterization revealed a polycrystalline nature with predominant perovskite phase in SBT thin films. Ferroelectric properties were studied in capacitor mode by depositing top electrodes, where the top electrode material is identical to that of the bottom electrode. Extensive analysis of the ferroelectric properties signify the important role played by the electrode material in establishing the device applicability is reported in this work.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Effects of Sputter-Deposited LaNiO3 Electrode on the Deposition and Properties of Ferroelectric Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
T. B. Wu ◽  
J. M. Wu ◽  
C. M. Wu ◽  
M. J. Shyu ◽  
M. S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Processing Condition ◽  
Fatigue Property ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Sputter Deposited

AbstractHighly (100)-textured thin film of metallic LaNiO3 (LNO) was grown on the Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at ˜300°C, which was used as a bottom electrode to prepare highly (100)-textured ferroelectric films. Examples on the deposition of PbTiO3, (Pbl−xLax)TiO3, Pb(Zr0.53Ti0.47)O3, Pb[(Mg1/3Nb2/3)1−xTix]O3, and (Ba1−xSrx)TiO3 thin films by rf magnetron sputtering or sol-gel method are shown. A reduction of temperature for perovskite phase formation can be achieved, especially for those difficult to crystallize. The surface roughness of the ferroelectric films is also improved as compared to that of films deposited on conventional Pt electrode. Although the electrical properties of the ferroelectric films are affected by the out-diffusion of LNO when a higher temperature was used in the preparation of the films, under an appropriate processing condition, the highly (100)-textured films can have satisfactory electrical characteristics for application. Moreover, the polarization-fatigue property can be also improved by the use of LNO electrode.

LUMINESCENT PROPERTIES OF SOL-GEL DEPOSITED Eu:TiO2 THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Glass Substrates ◽  
Corning Glass ◽  
Different Temperatures ◽  
Hecd Laser

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.

Structural and Vibrational Properties of Ferroelectric Pb1-xSrxTiO3 Thin Films and Powders

2002 ◽  
Vol 748 ◽  
Author(s):  
M. Jain ◽  
A. Savvinov ◽  
P. S. Dobal ◽  
S. B. Majumder ◽  
R. S. Katiyar ◽  
...  
Keyword(s):  
Thin Films ◽  
Soft Mode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Vibrational Properties ◽  
X Ray Diffraction ◽  
Phase Transition Temperatures ◽  
Induced Changes ◽  
Pst System

ABSTRACTIn this work we present the structural, and vibrational properties of ferroelectric Pb1-xSrxTiO3 (PST). Thin films of PST were prepared by using sol-gel technique for various compositions with x values ranging from 0.0–1.0. Respective compositions were also prepared in ceramic and powder forms using sol-gel and solid-state reaction methods. X-ray diffraction was used for the structural characterization of these materials. Raman spectroscopy was utilized to study the phases and lattice vibrational modes, especially the soft mode in PST compositions. The temperature dependence of the soft mode frequency for different PST compositions revealed that the phase transition temperatures increased with increasing Pb contents in PST system. Ferroelectric properties of the films were correlated with the substitution-induced changes in the material.

Structural, Dielectric and Pyroelectric properties of Lanthanum modified Lead Titanate Thin Films

2004 ◽  
Vol 811 ◽  
Author(s):  
Sonalee Chopra ◽  
Seema Sharma ◽  
T.C. Goel ◽  
R.G. Mendiratta
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Mechanical Stability ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Microstructural Analysis ◽  
Pyroelectric Coefficient ◽  
Structural Investigations ◽  
Glass Substrates

ABSTRACTFerroelectric lead lanthanum titanate (Pb1−xLaxTi1−x/4O3) (PLTx) thin films (x=0.04,0.08 and 0.12) have been prepared by sol-gel spin coating process on ITO coated 7059 Corning glass substrates. Investigations have been made on the crystal structure, surface morphology, dielectric and ferroelectric properties of the thin films. For a better understanding of the crystallization mechanism, the structural investigations were carried out at various annealing temperatures (350°C, 450°C, 550°C and 650°C). Characterization of these films by X-ray diffraction shows that the films annealed at 650°C exhibit tetragonal structure with perovskite phase. Replacement of lanthanum in lead titanate results in reduction of tetragonal ratio (c/a), resulting in better mechanical stability. Microstructural analysis of the films are carried out by taking the Atomic Force Microscope (AFM) pictures. AFM images are characterized by slight surface roughness with a uniform crack free, densely packed structure. Dielectric, pyroelectric and ferroelectric studies carried out on these films have been reported. Dielectric constant and pyroelectric coefficient increase while Curie temperature decreases with increase in La content. The pyroelectric figures of merit of the films have also been calculated which suggest that 8% lanthanum is best suited material for pyroelectric detectors owing to its high pyroelectric coefficient (∼ 29nC/cm2 K), high voltage responsivity (∼420Vcm2/J), high detectivity (∼1.04×10−5Pa−1/2) and low variation of pyrocoefficient with temperature.

The role of excess Pb and PbO overpressure on the microstructural development in polycrystalline PZT thin films

1994 ◽  
Vol 52 ◽  
pp. 582-583
Author(s):  
M. J. Lefevre ◽  
D. B. Dimos ◽  
J. S. Speck
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Optical Data Storage ◽  
Optical Data ◽  
Microstructural Development

Ferroelectric thin films have recently received considerable attention because of their potential in a range of device applications including both volatile and non-volatile memories, optical data storage, and other electrooptic applications (e.g. waveguides, switches, and modulators). The Pb-based perovskites, such as Pb(Zr,Ti)O3, have many properties that make them attractive for such applications because of their high switchable remanant polarization. In addition, many applications require integration of the ferroelectric with semiconductors. In our work we are studying the crystallization sequence of PZT 40/60 (PbZr0.40Ti0.60O3) grown on platinized silicon substrates, with an overall structure given as PZT/Pt/Ti/SiO2Si. The Ti and Pt are sequentially evaporated onto the oxidized Si substrate. Alkoxide-derived films are spun onto these substrates to form a dry amorphous gel2. The crystallization of the sol-gel film proceeds upon heating to temperatures in the range of 400-700°C. Lead volatility is one of the critical issues in the crystallization of Pb-based perovskite thin films. We have carried out a systematic study on the role of a lead atmosphere in crystallization for PZT (40/60). When heat treated the film forms a transitory pyrochlore phase at intermediate temperatures before transforming to the perovskite phase. This non-ferroelectric pyrochlore phase may stabilize if lead stoichiometry is not maintained, leading to poor optical and ferroelectric properties in the thin films.

Microstructure and Properties of A-Site Doping Bi4-xYxTi3O12 Ferrroelectric Thin Films

2015 ◽  
Vol 815 ◽  
pp. 171-175
Author(s):  
Hong Cheng Liu ◽  
Wei Jun Zhang ◽  
Xiao Chen Zhang ◽  
Qian Yu ◽  
Jue Wang
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Phase Development ◽  
Sol Gel Process ◽  
A Site

s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms ofY3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+substitution for Bi3+on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+substitution for Bi3+on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films werex:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted contentxwas equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Prvalue was equal to 16.02μC/cm2and the coercive fieldEcvalue was 88 kV/cm.

OPTIMIZATION OF PROCESSING TEMPERATURE TO ACHIEVE HIGH QUALITY SOL–GEL-DERIVED PZT THIN FILM

2009 ◽  
Vol 08 (03) ◽  
pp. 299-303 ◽  
Author(s):  
SAJJAD DEHGHANI ◽  
ABDOLGHAFAR BARZEGAR ◽  
MOHAMMAD HOSSEIN SHEIKHI
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Morphological Properties ◽  
Processing Temperature ◽  
High Quality ◽  
Pzt Thin Films ◽  
Polarization Voltage ◽  
Si Substrates

Ferroelectric PbZr 1-x Ti x O 3 (PZT) thin films have been extensively investigated because of their excellent piezoelectric, pyroelectric, ferroelectric, and dielectric properties. Sol–gel synthesis and spin-coating are popular routes to the formation of high quality, dense, and crack-free thin films. In this work, high quality, crack-free PZT thin films have been prepared by sol–gel method via spin-coating on Pt/Ti/SiO2/Si substrate by different temperature processings. The crystallographic and morphological properties of the films have been analyzed by X-ray diffraction and scanning electron microscopy. The electrical properties of thin films including the permittivity, loss tangent, and polarization–voltage hysteresis loop were measured and compared for different films. Finally, by optimizing temperature processing, highly textured and high quality films of PZT with perovskite phase were obtained on Pt/Ti/SiO2/Si substrates.

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