scholarly journals Formation of a Buried Soft Layer in Sic for ”Compliant Substrate” by Ion Implantation

1996 ◽  
Vol 438 ◽  
Author(s):  
M. Lioubtchenko ◽  
J. Hunn ◽  
A. Suvkhanov ◽  
N. Parikh ◽  
D. Bray
Keyword(s):  
Ion Implantation ◽  
Radiation Damage ◽  
Rutherford Backscattering ◽  
Soft Layer ◽  
Compliant Substrate ◽  
Graphitic Layer ◽  
Appreciable Increase ◽  
Significant Damage ◽  
New Phase ◽  
Ion Implanted

AbstractRadiation damage and its removal have been studied in ion implanted 6H-SiC by Rutherford backscattering/Channeling (RBS). We have implanted Ga and Ti at 800°C using doses of 1 × 1016 to 2× 1017 cm−2. The implanted samples have been subsequently annealed at 1050°C, and then at 1400°C for 30 sec to study the removal of damage produced during implantation. The energies of implanted species have been chosen to obtain 20 – 40 nmn projected ranges to form a buried metallic or graphitic layer. No significant damage removal has been observed after 1050°C anneal, however 1400°C annealing of 40 and 120 keV Ga implanted samples (fluence 2 × 1016 cm−2) resulted in significantly less damage as can be observed from RBS/Channeling data. In the case of Ti implanted samples annealing led to an appreciable increase in the channeled backscattering yield, which might be due to the formation of some new phase (e.g. TiSi or TiSi2 ) and may be related to distortions of the existing lattice.

scholarly journals Diffusion, Precipitation, and Cavity-Wall Reactions of Ion-Implanted Gold in Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
S.M. Myers ◽  
G.A. Petersen
Keyword(s):  
Ion Implantation ◽  
Solubility Product ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Cavity Wall ◽  
Temperature Range ◽  
Order Of Magnitude ◽  
Diffusion Precipitation ◽  
Ion Implanted

AbstractThe diffusion of Au in Si and its binding to cavities and to precipitates of the equilibrium Au-Si phase were investigated in the temperature range 1023-1123 K using ion implantation and Rutherford backscattering spectrometry. The diffusivity-solubility product for interstitial Au was found to be about an order of magnitude greater than the extrapolation of previous, indirect determinations at higher temperatures. Chemisorption on cavity walls was shown to be more stable than Au-Si precipitation by 0.1-0.3 eV in the investigated temperature range, indicating that cavities are effective gettering centers for Au impurities.

scholarly journals Formation of a buried soft layer in SiC for compliant substrate by ion implantation

1997 ◽  
Author(s):  
M. Lioubtchenko ◽  
A. Suvkhanov ◽  
N. Parikh ◽  
J. Hunn ◽  
D. Bray
Keyword(s):  
Ion Implantation ◽  
Soft Layer ◽  
Compliant Substrate

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Impurity ion implantation into silicon single crystals: efficiency and radiation damage

1995 ◽  
Vol 165 (3) ◽  
pp. 347-358 ◽  
Author(s):  
V.S. Vavilov ◽  
Aleksei R. Chelyadinskii
Keyword(s):  
Ion Implantation ◽  
Radiation Damage ◽  
Single Crystals ◽  
Impurity Ion

Amorphous Fe-B alloys produced by ion implantation. II. Low-temperature radiation damage

1985 ◽  
Vol 15 (6) ◽  
pp. 1237-1247 ◽  
Author(s):  
A Audouard ◽  
A Benyagoub ◽  
L Thome ◽  
J Chaumont
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Radiation Damage ◽  
Temperature Radiation

Quantitative Ruthenium Method for Analysis of Nitrogen Ion-Implanted Titanium Alloy (Ti-6AI-4V) and the Effect on Bacterial Adherence

1991 ◽  
Vol 252 ◽  
Author(s):  
Beverly L. Giammara ◽  
James M. Williams ◽  
David J. Birch ◽  
Joanne J. Dobbins
Keyword(s):  
Pseudomonas Aeruginosa ◽  
Titanium Alloy ◽  
Ion Implantation ◽  
Growth Period ◽  
Scattered Electron ◽  
Nitrogen Ion Implantation ◽  
Total Fluence ◽  
Nitrogen Ion ◽  
Electron Imaging ◽  
Ion Implanted

ABSTRACTThe effects of nitrogen ion implantation of Ti-6AI-4V alloy on growth of Pseudomonas aeruginosa bacteria on surfaces of the alloy have been investigated. Results for ion implanted samples were compared with controls with similarly smoothly polished surfaces and with controls that had intentionally roughened surfaces. The test consisted of exposing sterile alloy samples to a microbiological broth, to which 24 hour-old cultures of Pseudomonas aeruginosa had been added. After bioassociation at normal temperature 37°C, bacteria adhering to the surface were fixed and treated with a new ruthenium tetroxide staining method, and quantified by use of scanning electron microscopy (SEM), back-scattered electron imaging and EDAX energy dispersive microanalysis. For smooth samples of the alloy, after a 12 hour growth period, the retained bacteria (revealed by the biologically incorporated ruthenium), decreased monotonically with nitrogen dose out to a total fluence of approximately 7 × 1017/cm2 in an affected depth of approximately 0.1500 μm. The SEM confirmed that the Pseudomonas aeruginosa adhered equally to control materials. The ruthenium studies revealed that the amount of bacterial adhesion is indirectly proportional to the nitrogen ion implantation of the titanium. The greater the percentage of nitrogen ion implantation in the titanium alloy, the less bacteria colonized the disk.

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

scholarly journals Neutron-enhanced annealing of radiation damage formed by self-ion implantation in silicon

2006 ◽  
Vol 88 (24) ◽  
pp. 241921 ◽  
Author(s):  
A. Kinomura ◽  
A. Chayahara ◽  
Y. Mokuno ◽  
N. Tsubouchi ◽  
Y. Horino ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Radiation Damage
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