Corrosion of Electronic and Magnetic Devices and Materials

1996 ◽  
Vol 451 ◽  
Author(s):  
Gerald S. Frankel
Keyword(s):  
Thin Film ◽  
Failure Modes ◽  
Galvanic Corrosion ◽  
Potential Drop ◽  
Magnetic Devices ◽  
Disk Structure ◽  
Magnetic Layers ◽  
Ohmic Potential Drop ◽  
Corrosion Problem ◽  
Corrosion Susceptibility

ABSTRACTCorrosion of thin film structures commonly used in electronic and magnetic devices is discussed. Typical failure modes are presented, and galvanic corrosion is discussed in some detail since it is one common problem with such devices. A graphical explanation for the determination of the ohmic potential drop during galvanic corrosion is presented. The corrosion problem of thin film disks is shown to have changed during the past ten years owing to changes in disk structure. The corrosion susceptibility of two antiferromagnetic alloys used for exchange coupling to soft magnetic layers is discussed.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

scholarly journals Kinetics of electrochemical intercalation of lithium ion into Li[Li0.2Co0.3Mn0.5]O2 electrode from Li2SO4 solution

2021 ◽  
Vol 23 (09) ◽  
pp. 656-687
Author(s):  
K.C. Mahesh ◽  
◽  
G.S. Suresh ◽  
Keyword(s):  
Aqueous Electrolyte ◽  
Lithium Ion ◽  
Potential Drop ◽  
Charge Transfer Resistance ◽  
Transfer Resistance ◽  
Ohmic Potential Drop ◽  
Ion Intercalation ◽  
Time Invariant ◽  
Kinetics Of ◽  
Titration Technique

The kinetics of electrochemical lithium ion intercalation into Li[Li0.2Co0.3Mn0.5]O2 electrode in 2 M Li2SO4 aqueous electrolyte has been studied using two electroanalytical methods, namely, potentiostatic intermittent titration technique (PITT) and galvanostatic intermittent titration technique (GITT). The results are compared with those from nonaqueous electrolytes. Layered, lithium-rich Li[Li0.2Co0.3Mn0.5]O2 cathode material was synthesized by reactions under autogenic pressure at elevated temperature (RAPET) method. The effects of ohmic potential drop and charge-transfer resistance have been considered while predicting the current transients obtained with aqueous electrolyte. For PITT and GITT, we have defined their characteristic time-invariant functions, It1/2 and dE/dt1/2, respectively to present the diffusion time constant τ. Application of different theoretical diffusion models for treating the results obtained by the above-mentioned techniques allowed us to calculate the diffusion coefficient of lithium ions (D) at different potentials (E). The intercalation process is explained by considering the possible attractive interactions of the intercalated species in terms of Frumkin intercalation isotherm. We have observed a strictcorrespondence between the peaks of the intercalation capacitance and the minima in the corresponding log D vs. E curve.

scholarly journals Performance and failure modes of Si anodes patterned with thin-film Ni catalyst islands for water oxidation

2018 ◽  
Vol 2 (5) ◽  
pp. 983-998 ◽  
Author(s):  
Ke Sun ◽  
Nicole L. Ritzert ◽  
Jimmy John ◽  
Haiyan Tan ◽  
William G. Hale ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Oxidation ◽  
Failure Modes ◽  
Continuous Operation ◽  
Ni Catalyst ◽  
Si Anodes

Silicon photoanodes patterned with thin-film Ni catalyst islands exhibited stable sunlight-driven O2evolution for over 240 h of continuous operation in 1.0 M KOH.

Microstructure and Recording Noise of Thin Film Longitudinal Media

1991 ◽  
Vol 232 ◽  
Author(s):  
Tadashi Yogi ◽  
Thao A. Nguyena ◽  
Steven E. Lambert ◽  
Grace L. Gorman ◽  
Gil Castillo
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Magnetic Layer ◽  
Deposition Condition ◽  
Growth Morphology ◽  
Microstructural Characteristics ◽  
Magnetic Layers ◽  
The Media ◽  
Sputtering Pressure

ABSTRACTThe magnetic and recording characteristics of Co-based thin film media are strongly influenced by microstructure. The media microstructural characteristics, in turn, depend on sputtering conditions of underlayers and magnetic layers. The role of Cr underlayer thickness and sputtering pressure have been reported previously. The present work examines the growth morphology and recording properties of a CoPtCr alloy on Cr underlayers where the deposition conditions such as sputtering pressure and rf bias were independently varied for the Cr underlayer and the magnetic layer. We find that the growth morphology of the magnetic layer is governed primarily by the deposition condition of the Cr underlayer. In particular, increased sputtering pressure for the Cr underlayer produces columnar morphology which induces isolation of the grains in the magnetic layer. This results in a significant reduction in the recording noise due to reduced intergrain exchange coupling. On the other hand, the application of ff bias during the deposition of the magnetic layer promotes more continuous magnetic grains, thereby increasing the recording noise. The observed trends in microstructure and recording noise can be understood qualitatively in terms of Thornton's microstructure diagram and the competition between micromorphological roughness and adatom mobility during the film growth.

The Influence of Si on Magnetic and Magneto-Optical Properties of Co/Si/Co Thin-Film Systems

2015 ◽  
Vol 233-234 ◽  
pp. 653-656 ◽  
Author(s):  
Elena E. Shalygina ◽  
Elena A. Gan’shina ◽  
Anna M. Kharlamova ◽  
Aleksander N. Mukhin ◽  
Galina V. Kurlyandskaya ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Exchange Coupling ◽  
Structural Features ◽  
Magnetic Saturation ◽  
Antiferromagnetic Exchange ◽  
Saturation Field ◽  
Magnetic Layers

The magnetic and magneto-optical properties of the Co/Si/Co thin-film samples obtained by magnetron sputtering were investigated employing magnetooptical techniques. The thickness of the Co layers was equal to 5 nm, and Si layer thickness varied in the interval of 0.2 to 3.2 nm. The magnetic saturation field of the samples under study was found to oscillate in the magnitude with the change of the Si layer thickness. This result was explained by structural features of the Co/Si/Co multilayers and the presence of the antiferromagnetic exchange coupling between magnetic layers via the silicon interlayer. The peculiarities of the magneto-optical spectra of the Co/Si/Co samples were measured and discussed.

Sign in / Sign up

Export Citation Format

Share Document