The Influence of Si on Magnetic and Magneto-Optical Properties of Co/Si/Co Thin-Film Systems

2015 ◽  
Vol 233-234 ◽  
pp. 653-656 ◽  
Author(s):  
Elena E. Shalygina ◽  
Elena A. Gan’shina ◽  
Anna M. Kharlamova ◽  
Aleksander N. Mukhin ◽  
Galina V. Kurlyandskaya ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Exchange Coupling ◽  
Structural Features ◽  
Magnetic Saturation ◽  
Antiferromagnetic Exchange ◽  
Saturation Field ◽  
Magnetic Layers

The magnetic and magneto-optical properties of the Co/Si/Co thin-film samples obtained by magnetron sputtering were investigated employing magnetooptical techniques. The thickness of the Co layers was equal to 5 nm, and Si layer thickness varied in the interval of 0.2 to 3.2 nm. The magnetic saturation field of the samples under study was found to oscillate in the magnitude with the change of the Si layer thickness. This result was explained by structural features of the Co/Si/Co multilayers and the presence of the antiferromagnetic exchange coupling between magnetic layers via the silicon interlayer. The peculiarities of the magneto-optical spectra of the Co/Si/Co samples were measured and discussed.

Synthesis of Nanocomposite thin film Ti/Al Multilayers and Ti-Aluminides

1996 ◽  
Vol 457 ◽  
Author(s):  
R. Banerjee ◽  
X. D. Zhang ◽  
S. A. Dregia ◽  
H. L. Fraser
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Thermodynamic Model ◽  
Interfacial Reactions ◽  
Experimental Results ◽  
Structural Transitions ◽  
Nanocomposite Thin Film ◽  
Multilayered Thin Films

ABSTRACTNanocomposite Ti/Al multilayered thin films have been deposited by magnetron sputtering. These multilayers exhibit interesting structural transitions on reducing the layer thickness of both Ti and Al. Ti transforms from its bulk stable hep structure to fee and Al transforms from fee to hep. The effect of ratio of Ti layer thickness to Al layer thickness on the structural transitions has been investigated for a constant bilayer periodicity of 10 nm by considering three different multilayers: 7.5 nm Ti / 2.5 nm Al, 5 nm Ti / 5 nm Al and 2.5 nm Ti / 7.5 nm Al. The experimental results have been qualitatively explained on the basis of a thermodynamic model. Preliminary experimental results of interfacial reactions in Ti/Al bilayers resulting in the formation of Ti-aluminides are also presented in the paper.

Observation of an Exponential FeSi Spacer Thickness Dependence of the Antiferromagnetic Exchange Coupling in Fe/Si-Based Multilayers

1997 ◽  
Vol 475 ◽  
Author(s):  
J.T. Kohlhepp ◽  
J.J. De Vries ◽  
F.J.A. Den Broeder ◽  
R. Coehoorn ◽  
R.M. Jungblut ◽  
...  
Keyword(s):  
Exchange Coupling ◽  
Room Temperature ◽  
Decay Length ◽  
Antiferromagnetic Exchange ◽  
Interlayer Exchange Coupling ◽  
Magnetic Layers ◽  
Magnetic Analysis ◽  
Spacer Thickness ◽  
Interlayer Exchange ◽  
B2 Structure

ABSTRACTThe magnetic interlayer exchange coupling in Fe/Si-based thin film structures employing sputtered multilayers with variations of Si-alloyed Fe for the magnetic layers and Fe-alloyed Si spacers, as well as wedge-shaped MBE-grown Fe/Si/Fe sandwich samples has been systematically studied. From structural and magnetic analysis it is concluded that ultrathin Si and FexSi100-x (x < 50) spacer layers transform into a crystalline iron suicide with a composition close to Fe50Si50. The exchange coupling mediated by this metallic suicide is antiferromagnetic and depends on the spacer thickness in an exponential, i.e. non-oscillatory, manner with a universial characteristic decay length of 3–4 Å at room temperature. This observation can be qualitatively explained within the framework of a recent coupling theory on the premise that the FeSi interlayer has the metastable CsCl(B2)-structure.

ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Sputtering Power

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

Growth Spindle-Like ZnO Nanocrystalline Thin Films on Nickel Layers by Dc Magnetron Sputtering and its Thermal Annealing Properties

2011 ◽  
Vol 675-677 ◽  
pp. 1097-1100
Author(s):  
W. Wu ◽  
X.H. Xiao ◽  
T.C. Peng ◽  
C.Z. Jiang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Structural Features ◽  
Optical Quality ◽  
Zno Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Dc Magnetron Sputtering ◽  
Band Emission ◽  
Thin Film Layer

A novel spindle-like zinc oxide (ZnO) nanocrystalline thin film was successfully fabricated on Ni thin film layer by ultrahigh-vacuum dc magnetron sputtering. Then the as-grown films were annealed in air at various temperatures from 673 to 1073 K, the corresponding structural features and surface morphology were studied by X-ray diffraction (XRD) and field emission scanning electronic microscopy (FE-SEM). The results reveal that the dominant direction of grains movement changed from perpendicular to parallel to the film interfaces. A correlation of the band gap and photoluminescence (PL) properties of nanocrystalline ZnO films with particle size morphologies and strain was discussed. Especially, PL emission in UV range, which is due to near band edge emission is more intense in comparison with the green band emission (due to defect state) was observed in all samples, indicating a good optical quality of the deposited films.

scholarly journals Structural and magnetic characteristics of the Co/Cu/Co thin-film systems

2018 ◽  
Vol 185 ◽  
pp. 03009
Author(s):  
Elena Shalygina ◽  
Anna Kharlamova ◽  
Andrey Makarov ◽  
Galina Kurlyandskaya ◽  
Andrey Svalov
Keyword(s):  
Thin Film ◽  
Exchange Coupling ◽  
Hysteresis Loops ◽  
Easy Magnetization Axis ◽  
Magnetic Characteristics ◽  
Easy Magnetization ◽  
Saturation Field ◽  
Glass Substrates ◽  
Magnetization Axis ◽  
Ferromagnetic Layers

The results on investigation of structural and magnetic characteristics of Co/Cu/Co thin-film systems obtained by magnetron sputtering on glass substrates are presented. The thickness of Co layers in all samples is equal to 5 nm and the Cu layer is varied from 0.5 to 4 nm. It is found that the saturation field, HS, oscillates in magnitude with increasing Cu layer thickness with the period of the order of 1 nm. The maximum values of HS are observed for tCu = 1.4, 2.2 and 3.2 nm. The hysteresis loops measured for these samples in a magnetic field applied along the easy magnetization axis have a two-step form, and for other tCu – rectangular one. The obtained results are explained by the presence of exchange coupling between the ferromagnetic layers through a Co spacer and its oscillating behavior with changing tCu.

scholarly journals Study the structural and optical properties of nanostructure ZnS thin film prepared by Radio frequency (RF) magnetron sputtering technique

2019 ◽  
Vol 24 (6) ◽  
pp. 93
Author(s):  
Azhar Mohammed Abed1 ◽  
, Abdulhussain K. Elttayef2 ◽  
Khalid Hamdi Razeg1
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Sem Image ◽  
Maximum Particle ◽  
Uv Visible ◽  
Different Thickness

Zinc sulfide (ZnS) thin films were deposited on glass substrate with different thickness by radiofrequency (RF) magnetron sputtering technique, and deals with effect of thickness on the optical and structural properties. The structure, surface morphology and optical properties are investigated by x-ray diffraction (XRD), atomic forces microscopy (AFM), scanning electron microscopy, and UV-visible spectrophotometer.  The result of XRD show that ZnS thin film exhibited cubic structure with strong peaks at (111) as highly preferential orientation. The maximum particle size of films was found to be 14.4 at thickness 868nm. SEM image show that the shape of grain is like spherical. The result of AFM shows that the surface roughness decrease with increasing in film thickness from (6.19 to 1.45)nm. The result of UV-visible suggests that transmittance increasing with increases in film thickness, the value maximum of ZnS transmission was 87.82%  at thickness 868nm, can be very much useful in the field of solar cell and optical sensor .   http://dx.doi.org/10.25130/tjps.24.2019.113

STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (01) ◽  
pp. 1350008 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
G. ALAHYARIZADEH
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Growth Orientation ◽  
Atomic Force

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtzite InN are clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtzite InN thin film with (101) preferred growth orientation was successfully grown on 6H-SiC substrate.

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