Disorder-Delineated AlGaAs/GaAs Quantum-Well Phase Modulator
Keyword(s):
The Core
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AbstractModeling is used to investigate waveguide phase modulators, with 0.5 μm and 1 μm quantum well active regions which are defined by implantation induced disordering. By controlling the extent of the interdiffusion in the lateral claddings, the refractive index difference between the core and claddings is used to provide single mode operation. The performance of the phase modulator is studied in terms of optical confinement, phase change per unit voltage per unit length, chirping property and absorption loss. Our result shows that the 0.5 μm one is a more efficient structure and its absorption loss can be reduced by increasing the applied field from 50 kV/cm to 100 kV/cm.
Keyword(s):
Keyword(s):
InGaAlAs/InAlAs multiple quantum well phase modulator integrated with spot size conversion structure
1994 ◽
Vol 6
(2)
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pp. 208-210
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2005 ◽
Vol 22
(4)
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pp. 956-959
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1995 ◽
Vol 7
(2)
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pp. 194-196
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Keyword(s):