Ambipolar Field Effect Transistor

1985 ◽  
Vol 49 ◽  
Author(s):  
H. Pfleiderer ◽  
W. Kusian
Keyword(s):  
Thin Film ◽  
Theoretical Model ◽  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Thin Film Transistor ◽  
Silicon Film ◽  
Amorphous Silicon Film ◽  
Effect Transistor

AbstractThe characteristics of a thin-film transistor using an amorphous-silicon film are presented. The appearance of electron and hole channels is made possible by ohmic source and drain contacts. A theoretical model explains the phenomena.

Fully transparent conformal organic thin-film transistor array and its application as LED front driving

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 3613-3620 ◽  
Author(s):  
Nan Cui ◽  
Hang Ren ◽  
Qingxin Tang ◽  
Xiaoli Zhao ◽  
Yanhong Tong ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Solution Processed ◽  
Grid Electrode ◽  
Metal Grid ◽  
Effect Transistor

A fully transparent conformal organic thin-film field-effect transistor array is obtained based on an ultrathin embedded metal-grid electrode and a solution-processed C8-BTBT film.

Use of a Field Effect Transistor to Study Phototransport Properties of a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
A. R. Grant ◽  
P. D. Persans ◽  
R. F. Kwasnick ◽  
G. E. Possin
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Majority Carrier ◽  
Effect Transistor

We report new measurements of the diffusion length of minority photocarriers in thin film amorphous silicon field effect transistor structures. We are able to vary the majority carrier photoconductance by more than four orders of magnitude while monitoring the effective ambipolar diffusion length using the photocarrier grating technique.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

A Novel Amorphous-Silicon Field-Effect Transistor with Good Off-Characteristics

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2379-L2381 ◽  
Author(s):  
Yasutaka Uchida ◽  
Masakiyo Matsumura
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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