Effect of Domain Structure on the Magnetoresistance of Epitaxial Thin Films of Ferromagnetic Metallic Oxide SrRuO3

1997 ◽  
Vol 494 ◽  
Author(s):  
R. A. Rao ◽  
D. B. Kacedon ◽  
C. B. Eom
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Films ◽  
Domain Structure ◽  
Applied Magnetic Field ◽  
Spin Fluctuations ◽  
Negative Magnetoresistance ◽  
Epitaxial Thin Films ◽  
Metallic Oxide ◽  
Domain Structures

ABSTRACTWe have grown epitaxial ferromagnetic metallic oxide SrRuO3 thin films with different domain structures on (001) LaAlO3 and miscut (001) SrTiO3 substrates. The effect of crystallographic domain structures on the magnetization and magnetoresistive behavior of epitaxial SrRuO3 thin films has been studied. Magnetization measurements on the single domain film on 2° miscut (001) SrTiO3 substrate showed that the in-plane [110] direction, which is aligned along the miscut direction, is the easier axis for magnetization compared to the [001] direction. This film also showed a strong anisotropie magnetoresistance (AMR) effect of ∼ 8% in magnitude. In contrast, the SrRuO3 thin film on (001) LaAlO3 substrate shows identical magnetization and magnetoresistance behavior in two orthogonal directions on the film due to the presence of 90 domains in the plane. For both the films, large negative magnetoresistance effects (-10%) were observed when the current and the applied magnetic field are parallel. The magnetoresistance behavior is explained in terms of suppression of spin fluctuations near Tc and the AMR effect.

Magnetic Domain Structures in CoNiFe Thin Films and Lines

2002 ◽  
Vol 738 ◽  
Author(s):  
Lucas Pérez ◽  
Oscar de Abril ◽  
Claudio Aroca ◽  
Pedro Sánchez ◽  
Eloísa López ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Anisotropy ◽  
Domain Structure ◽  
Magnetic Domain ◽  
Electrodeposition Process ◽  
Domain Structures

ABSTRACTThin films and arrays of lines of magnetic CoNiFe alloy have been produced by electrodeposition. A magnetic field was applied during the electrodeposition process in order to induce a magnetic anisotropy in the sample. The dependence of the magnetic properties and the magnetic domain structures on the thickness of the films is reported. In addition to this, the magnetic properties and the domain structure of a thin film and an array of lines, with the same thickness and deposited in the same conditions, have been compared. An increase in the coercivity of the array of lines has been shown.

The Effect of Miscut Angle and Miscut Direction of Vicinal (001) SrTiO3 Substrates on The Domain Structure of Epitaxial SrRuO3 Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
Q. Gan ◽  
R. A. Rao ◽  
C.B Eom
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Orthorhombic Unit Cell ◽  
Metallic Oxide ◽  
Force Microscopy ◽  
Atomic Force ◽  
Step Flow Growth ◽  
Miscut Angle

ABSTRACTWe have grown epitaxial thin films of isotropie metallic oxide SrRuC>3 on both exact and vicinal (001) SrTiO3 substrates with miscut angle (α) up to 5.0° and miscut direction (β) up to 37° away from the in-plane [010] axis. The effects of both α and β on the epitaxial growth and domain structure of epitaxial SrRuC>3 thin films were studied by x-ray diffraction and atomic force microscopy (AFM). On vicinal SrTiO3 substrates with a large miscut angle (α = 1.7°, 2.0°, 4.1°, and 5.0°) and miscut direction close to the [010] axis, single crystal epitaxial (110)° SrRuO3 thin films were obtained. [The superscript o refers to the Miller indices based on the orthorhombic unit cell.] Decreasing the substrate miscut angle or aligning the miscut direction close to the [110] axis (β = 45°) resulted in an increase of 90° domains in the plane. The films grown on vicinal substrates displayed a significant improvement in crystalline quality and in-plane epitaxial alignment as compared to the films grown on exact (001) SrTiO3 substrates. AFM revealed that as the miscut angle increased the growth mechanism changed from two dimensional nucleation to step flow growth.

Magnetoresistance of epitaxial thin films of ferromagnetic metallic oxide SrRuO3 with different domain structures

1997 ◽  
Vol 71 (12) ◽  
pp. 1724-1726 ◽  
Author(s):  
D. B. Kacedon ◽  
R. A. Rao ◽  
C. B. Eom
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
Metallic Oxide ◽  
Domain Structures

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

MAGNETIC RESISTIVITY IN Bi2Sr2Ca(Cu1-xCox)2Od EPITAXIAL THIN FILMS

2007 ◽  
Vol 21 (01) ◽  
pp. 127-132
Author(s):  
T. R. YANG ◽  
G. ILONCA ◽  
V. TOMA ◽  
P. BALINT ◽  
M. BODEA
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Activation Energy ◽  
Glass Transition ◽  
Effective Activation Energy ◽  
Epitaxial Thin Films ◽  
Effective Activation ◽  
High Quality ◽  
Plastic Deformations ◽  
Magnetic Resistivity

The scaling behavior of the effective activation energy of high-quality epitaxial c-oriented Bi 2 Sr 2 Ca ( Cu 1-x Co x)2 O d thin films with 0≤x ≤0.025 has been studied as a function of temperature and magnetic field. For all samples, the effective activation energy scales as U(T, μoH)=Uo(1-T/T c )mHn with exponent m=1.25±0.03, n=-1/2 and the field scaling 1/μoH and -UμoH for thick films and ultra thin films, respectively. The results are discussed taking into account of the influence of the Co substitution with a model in which U(T, H) arises from plastic deformations of the viscous flux liquid above the vortex-glass transition temperature.

Ferromagnetic–Antiferromagnetic Coupling Core–Shell Nanoparticles with Spin Conservation for Water Oxidation

2021 ◽  
Author(s):  
Jingjie Ge ◽  
Riccardo Ruixi Chen ◽  
Xiao Ren ◽  
Xia Li ◽  
Jiawei Liu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Transport ◽  
Domain Structure ◽  
Applied Magnetic Field ◽  
Water Oxidation ◽  
Rational Design ◽  
Critical Role ◽  
Antiferromagnetic Coupling ◽  
Core Shell ◽  
Multiple Domain

<p>Rational design of active oxygen evolution reaction (OER) catalysts is critical for the overall efficiency of water electrolysis. OER reactants and products’ differing spin states is one of causes to slow OER kinetics. Thus, spin conservation plays a crucial role in enhancing OER performance. In this work, we design ferromagnetic (FM)–antiferromagnetic (AFM) Fe<sub>3</sub>O<sub>4</sub>@Ni(OH)<sub>2</sub> core–shell catalysts. The interfacial FM–AFM coupling of these catalysts facilitates selective removal of electrons with spin direction opposing the magnetic moment of FM core, improving OER kinetics. The shell thickness is found critical in retaining the coupling effect for OER enhancement. The magnetic domain structure of the FM core also plays a critical role. With a multiple domain core, the applied magnetic field aligns the magnetic domains, optimising the electron transport process. A significant enhancement of OER activity is observed for the multiple domain core catalysts. With a single domain FM core with ordered magnetic dipoles, the spin-selective electron transport with minimal scattering is facilitated even without an applied magnetic field. We therefore draw a magnetism/OER activity model that depends on two main parameters: interfacial spin coupling and domain structure. Our findings provide new design principles for active OER catalysts.</p>

ANOMALOUS BEHAVIORS OF NON-RESONANT MICROWAVE ABSORPTIONS OF SUPERCONDUCTORS

2000 ◽  
Vol 14 (16) ◽  
pp. 1633-1650
Author(s):  
K. SUGAWARA ◽  
N. ARAI ◽  
A. KOUZUKI ◽  
S. ICHIMURA ◽  
H. NAOI ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Applied Magnetic Field ◽  
Microwave Power ◽  
Superconducting Thin Films ◽  
Modulation Amplitude ◽  
Directional Effect ◽  
System A ◽  
Powder Samples ◽  
Preliminary Study

The non-resonant microwave absorption (NRMA) measurements have been intensively performed for superconducting thin films of YBa 2 Cu 3 O y fabricated on MgO (100) substrates and powder samples of LaSrCuO systems. In order to complement the study, we also review the NRMA of BiSrCaCuO system. A particular attention has been paid to the following phenomena: (i) phases, (ii) effect of current, (iii) directional effect of applied magnetic field, (iv) hysteresis, (v) microwave power absorbed as a function of magnetic field, (vi) linewidth in the vicinity of T c , and (vii) modulation amplitude effect. A preliminary study on ( La 0.98 Dy 0.02)1.85 Sr 0.15 CuO 4 was also reported.

scholarly journals Effect of applied magnetic field on the electroplating and magnetic properties of amorphous FeNiPGd thin film

2020 ◽  
Vol 495 ◽  
pp. 165872 ◽  
Author(s):  
Lin-Lin Yang ◽  
Chunhuan Chen ◽  
Jie Yuan ◽  
Li-Yin Gao ◽  
Zhengang Shang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Magnetic Properties ◽  
Applied Magnetic Field

scholarly journals Magnetostriction Behaviors of Fe100–xCox Alloy Epitaxial Thin Films under Rotating Magnetic Field

2019 ◽  
Vol 43 (3) ◽  
pp. 50-58
Author(s):  
K. Serizawa ◽  
M. Ohtake ◽  
T. Kawai ◽  
M. Futamoto ◽  
F. Kirino ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Rotating Magnetic Field ◽  
Epitaxial Thin Films

A Study of the Oxygen Surface Exchange Coefficient on La0.5Sr0.5CoO3−δ Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
X. Chen ◽  
S. Wang ◽  
Y.L. Yang ◽  
L. Smith ◽  
N.J. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Initial Pressure ◽  
Transient Behavior ◽  
Epitaxial Thin Films ◽  
Exchange Coefficient ◽  
Surface Exchange ◽  
Surface Exchange Coefficient ◽  
Pressure Changes ◽  
Oxygen Surface Exchange

AbstractLa0.5Sr0.5CoO3−δ (LSCO) can be used as a cathode material for low temperature solid oxide fuel cell applications. LSCO epitaxial thin films have been deposited on LaAlO3 substrates by pulsed laser deposition (PLD). The transient behavior of the thin film conductivity with the pressure changes was recorded as a function of temperature and partial oxygen pressure. The surface exchange coefficient k of the LSCO thin film was obtained from analysis of the electrical conductivity relaxation data. The measured surface exchange coefficient increases with temperature and with final pressure but is not sensitive to the initial pressure. After prolonged annealing at 900°C, the k value was found to have greatly increased. The mechanism of the dependence of the measured k on pressure is discussed.

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