Dry and Wet Etch Processes for NiMnSb, LaCaMnO3 and Related Materials

1997 ◽  
Vol 494 ◽  
Author(s):  
J. Hong ◽  
J. J. Wang ◽  
E. S. Lambers ◽  
J. A. Caballero ◽  
J. R. Childress ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Smooth Surface ◽  
Dielectric Materials ◽  
Ion Density ◽  
Ion Energy ◽  
Sensor Devices ◽  
Etch Rates ◽  
Surface Morphologies ◽  
Wet Etch ◽  
Dry Etch

ABSTRACTA variety of plasma etching chemistries were examined for patterning NiMnSb Heusler thin films and associated A12O3 barrier layers. Chemistries based on SF6 and Cl2 were all found to provide faster etch rates than pure Ar sputtering. In all cases the etch rates were strongly dependent on both the ion flux and ion energy. Selectivities of ≥20 for NiMnSb over A12O3 were obtained in SF6-based discharges, while selectivities ≤5 were typical in Cl2 and CH4/H2 plasma chemistries. Wet etch solutions of HF/H2O and HNO3/H2SO4/H2O were found to provide reaction-limited etching of NiMnSb that was either non-selective or selective, respectively, to A12O3. In addition we have developed dry etch processes based on Cl2/Ar at high ion densities for patterning of LaCaMnO3 (and SmCo permanent magnet biasing films) for magnetic sensor devices. Highly anisotropie features are produced in both materials, with smooth surface morphologies. In all cases, SiO2 or other dielectric materials must be used for masking since photoresist does not retain its geometrical integrity upon exposure to the high ion density plasma.

HI/H2 ECR Plasma Etching of III-V Semiconductors

1992 ◽  
Vol 268 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. Katz ◽  
F. Ren ◽  
T. R. Fullowan ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Electron Spectroscopy ◽  
Dry Etching ◽  
Hydrogen Passivation ◽  
Near Surface ◽  
Ecr Plasma ◽  
Order Of Magnitude ◽  
Polymer Deposition ◽  
Etch Rates ◽  
Surface Morphologies

ABSTRACTHI/H2/Ar discharges are shown to be universal etchants for rn-V semiconductors, giving rise to highly anisotropic features with smooth surface morphologies. At loy dc self bia:s (-100V) and low pressure (1 mTorr), etch rates for all III-V materials of >2000Å min−1 are possible for high HI percentages in the discharges, whereas rates greater than 1 Åm min−1 are obtained at higher pressures and dc biases. These etch rates are approximately an order of magnitude faster than for CH4/H2/Ar mixtures under the same conditions and there is no polymer deposition on the mask or within the reactor chamber with HI/H2/Ar. Auger Electron Spectroscopy reveals residue-free, stoichiometric surfaces after dry etching in this mixture. As i result, photoluminescence intensities from dry etched samples remain high with little apparent damage introduction. Changes in the near-surface carrier concentration due to hydrogen passivation effects are also negligible with HI-based mixtures in comparison to CH4-based dry etching.

Dry Etch Damage in GaAs P-N Junctions

1991 ◽  
Vol 240 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
C. R. Abernathy ◽  
T. R. Fullowan ◽  
J. R. Lothian
Keyword(s):  
Plasma Etching ◽  
Ion Bombardment ◽  
Plasma Exposure ◽  
Base Resistance ◽  
Ion Energy ◽  
Ion Energies ◽  
A Minor ◽  
P Type ◽  
Dry Etch ◽  
Very High

ABSTRACTGaAs p-n junction mesa-diode structures were fabricated so that both n- and p-type layers could be simultaneously exposed to either O2 or H2 discharges. This simulates the ion bombardment during plasma etching with either CCl2F2/O2 or CH4/H2 mixtures. The samples were exposed to 1 mTorr discharges for period of 1–20 min with DC biases of -25 to -400V on the cathode. For O2 ion bombardment, the collector resistance showed only minor (≤10%) increases for biases up to -200 V and more rapid increases thereafter. In our structure, this indicates that bombardment-induced point defects penetrate at least 500 Å of GaAs for ion energies of ≥200eV. The base resistance displayed only a minor increase (∼10%) over the pre-exposure value even for O+ ion energies of 375 eV, due to the very high doping (1020 cm−3 ) in the base. More significant increases in both collector and base resistances were observed for hydrogen ion bombardment due to hydrogen passivation effects. We will give details of this behaviour as a function of ion energy, plasma exposure time and post-treatment annealing temperature.

Wet and Dry Etching of InGaP

1991 ◽  
Vol 240 ◽  
Author(s):  
J. R. Lothian ◽  
J. M. Kuo ◽  
S. J. Pearton ◽  
F. Ren
Keyword(s):  
Etch Rate ◽  
Smooth Surface ◽  
Etching Rate ◽  
Kcal Mole ◽  
Thermally Activated ◽  
Self Bias ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Surface Morphologies ◽  
Dry Etch

ABSTRACTThe wet chemical etching rates of InGaP in H3 PO4:HCL:H2O mixtures have been systematically measured as a function of etch formulation and are most rapid (-1 μm · min−1) for high HCl compositions. The etch rate, R, in a 1:1:1 mixture is thermally activated of the form R ∝ e−Ea/kT, where Ea = 11.25 kCal · mole−1. This is consistent with the etching being reaction-limited at the surface. This etch mixture is selective for InGaP over GaAs. For chlorine-based dry etch mixtures (PCl3 /Ar or CCl2 F2 /Ar) the etching rate of InGaP increases linearly with DC self-bias on the sample, whereas CH4/H2-based mixtures produce slower etch rates. Selectivities of ≥500 for etching GaAs over InGaP are obtained under low bias conditions with PCl3/Ar, but the surface morphologies of InGaP are rough. Both CCl2F2/Ar and CH4/H2/Ar mixtures produce smooth surface morphologies and good (>10) selectivities for etching GaAs over InGaP.

scholarly journals Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2941
Author(s):  
Jie Li ◽  
Yongjae Kim ◽  
Seunghun Han ◽  
Heeyeop Chae
Keyword(s):  
Etch Rate ◽  
Semiconductor Device ◽  
Threshold Energy ◽  
Device Fabrication ◽  
High Threshold ◽  
Ion Density ◽  
Bias Power ◽  
Ion Energy ◽  
Etch Rates ◽  
Hydrogenated Amorphous

The sp2-rich hydrogenated amorphous carbon (a-C:H) is widely adopted as hard masks in semiconductor-device fabrication processes. The ion-enhanced etch characteristics of sp2-rich a-C:H films on ion density and ion energy were investigated in CF4 plasmas and O2 plasmas in this work. The etch rate of sp2-rich a-C:H films in O2 plasmas increased linearly with ion density when no bias power was applied, while the fluorocarbon deposition was observed in CF4 plasmas instead of etching without bias power. The etch rate was found to be dependent on the half-order curve of ion energy in both CF4 plasmas and O2 plasmas when bias power was applied. An ion-enhanced etching model was suggested to fit the etch rates of a-C:H in CF4 plasmas and O2 plasmas. Then, the etch yield and the threshold energy for etching were determined based on this model from experimental etch rates in CF4 plasma and O2 plasma. The etch yield of 3.45 was observed in CF4 plasmas, while 12.3 was obtained in O2 plasmas, owing to the high reactivity of O radicals with carbon atoms. The threshold energy of 12 eV for a-C:H etching was obtained in O2 plasmas, while the high threshold energy of 156 eV was observed in CF4 plasmas. This high threshold energy is attributed to the formation of a fluorocarbon layer that protects the a-C:H films from ion-enhanced etching.

Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas

1997 ◽  
Vol 468 ◽  
Author(s):  
R. J. Shul ◽  
R. D. Briggs ◽  
J. Han ◽  
S. J. Pearton ◽  
J. W. Lee ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Chemical Nature ◽  
Photonic Devices ◽  
High Density ◽  
Low Degree ◽  
Patterning Technique ◽  
High Bond ◽  
Dc Bias ◽  
Etch Rates ◽  
Surface Morphologies

ABSTRACTFabrication of group-Ill nitride electronic and photonic devices relies heavily on the ability to pattern features with anisotropie profiles, smooth surface morphologies, etch rates often exceeding 0.5 μm/min, and a low degree of plasma-induced damage. Patterning these materials has been especially difficult due to their high bond energies and their relatively inert chemical nature as compared to other compound semiconductors. However, high-density plasma etching has been an effective patterning technique due to ion fluxes which are 2 to 4 orders of magnitude higher than conventional RIE systems. GaN etch rates as high as -1.3 μm/min have been reported in ECR generated ICI plasmas at -150 V dc-bias. In this study, we report high-density GaN etch results for ECR- and ICP-generated plasmas as a function of Cl2- and BCl3-based plasma chemistries.

scholarly journals Dry Etching of III-V Nitrides

1995 ◽  
Vol 395 ◽  
Author(s):  
S. J. Pearton ◽  
R. J. Shul ◽  
G. F. McLane ◽  
C. Constantine
Keyword(s):  
Plasma Etching ◽  
Dry Etching ◽  
Ion Density ◽  
Chemical Inertness ◽  
Order Of Magnitude ◽  
High Bond ◽  
Bond Strengths ◽  
Dc Bias ◽  
Etch Rates

ABSTRACTThe chemical inertness and high bond strengths of the III-V nitrides lead to slower plasma etching rates than for more conventional III-V semiconductors under the same conditions. High ion density conditions (>3×1011cm−3) such as those obtained in ECR or magnetron reactors produce etch rates up to an order of magnitude higher than for RIE, where the ion densities are in the 109 cm−3 range. We have developed smooth anisotropic dry etches for GaN, InN, AlN and their alloys based on Cl2/CH4/H2/Ar, BCl3/Ar, Cl2/H2, C12/SF6, HBr/H2 and HI/H2 plasma chemistries achieving etch rates up to ∼4,000Å/min at moderate dc bias voltages (≤-150V). Ion-induced damage in the nitrides appears to be less apparent than in other III-V’s. One of the key remaining issues is the achievement of high selectivities for removal of one layer from another.

Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low-k Dielectric Materials on 45 nm Pitch Interconnects

2016 ◽  
Vol 255 ◽  
pp. 232-236
Author(s):  
Makonnen Payne ◽  
Steven Lippy ◽  
Ruben R. Lieten ◽  
Els Kesters ◽  
Quoc Toan Le ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Dielectric Materials ◽  
Plasma Etch ◽  
Novel Materials ◽  
Material Compatibility ◽  
Wet Etch ◽  
Dry Etch ◽  
Low K ◽  
Etch Residue

In the BEOL, as interconnect dimensions shrink and novel materials are used, it has become increasingly difficult for traditional PERR removal chemicals to meet the evolving material compatibility requirements. As a result, formulated cleans that specifically target these unique challenges are required. Two formulated BEOL cleans were evaluated on blanket and patterned wafer coupons for their ability to wet etch titanium nitride (TiN) and clean post-plasma etch residue, while remaining compatible to interconnect metals (Cu and W) and low-k dielectric (k = 2.4). Both, showed an improvement in material compatibility relative to dilute HF, while simultaneously being able to remove the TiN hardmask and post-etch residue, leading > 90% yield on test structures of varying sizes.

Wet and Dry Etching Characteristics of Electron Beam Deposited SiO and SiO2

1999 ◽  
Vol 573 ◽  
Author(s):  
J. R. LaRoche ◽  
F. Ren ◽  
J. R. Lothian ◽  
J. Hong ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Inductively Coupled Plasma ◽  
Thickness Variation ◽  
Auger Analysis ◽  
Excellent Thermal Stability ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Wet Etch ◽  
Dry Etch ◽  
Thermal Stability Of

ABSTRACTWe have studied the thermal stability and etching characteristics of E-beam deposited SiO and SiO2. Dry etch rates were studied using SF6 and NF3 discharges in a Plasma Therm inductively coupled plasma system. Wet etch rates were assessed with buffered HF and HF/H2O solutions. SiO2 etched faster than SiO under all etch conditions. Dry etch rate of SiO2 was comparable with PECVD SiO2. Auger analysis indicated that SiO2 maintained excellent thermal stability after annealing to 700°C. The Si/O ratio of SiO in the film increased when annealed to 700°C. Ellipsometry also revealed greater refractive index variance across the sample for SiO, as compared to SiO2. However, thickness variation of both films was ≤ 2% across the wafer. Ellipsometry data also showed great thermal stability of SiO and SiO2. There was <4% change after 700°C annealing.

Selective High-Throughput TiN Etching Methods

2012 ◽  
Vol 195 ◽  
pp. 143-145 ◽  
Author(s):  
Emanuel I. Cooper ◽  
Rekha Rajaram ◽  
Makonnen Payne ◽  
Steven Lippy
Keyword(s):  
Titanium Nitride ◽  
High Throughput ◽  
Seed Layer ◽  
Wet Etching ◽  
Thermochemical Properties ◽  
Hard Mask ◽  
Acidic Solutions ◽  
Layer Deposition ◽  
Wet Etch ◽  
Dry Etch

Titanium nitride (TiN) is widely used as a hard mask film protecting the inter-level dielectric (ILD) before metal or plating seed layer deposition steps. It is common practice to use a wet etch in order to remove residues formed during the ILD dry-etch step, and at the same time to remove some or all of the exposed TiN. From its thermochemical properties, it might be predicted that wet etching of TiN should be easy, since it is quite unstable with respect to both plain and oxidative hydrolysis. For example, in acidic solutions at 25°C [1, :

Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism

2021 ◽  
Author(s):  
Hsien-Chih Huang ◽  
Zhongjie Ren ◽  
Clarence Chan ◽  
Xiuling Li
Keyword(s):  
Wet Etch ◽  
Dry Etch
Sign in / Sign up

Export Citation Format

Share Document