Wet and Dry Etching Characteristics of Electron Beam Deposited SiO and SiO2

1999 ◽  
Vol 573 ◽  
Author(s):  
J. R. LaRoche ◽  
F. Ren ◽  
J. R. Lothian ◽  
J. Hong ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Inductively Coupled Plasma ◽  
Thickness Variation ◽  
Auger Analysis ◽  
Excellent Thermal Stability ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Wet Etch ◽  
Dry Etch ◽  
Thermal Stability Of

ABSTRACTWe have studied the thermal stability and etching characteristics of E-beam deposited SiO and SiO2. Dry etch rates were studied using SF6 and NF3 discharges in a Plasma Therm inductively coupled plasma system. Wet etch rates were assessed with buffered HF and HF/H2O solutions. SiO2 etched faster than SiO under all etch conditions. Dry etch rate of SiO2 was comparable with PECVD SiO2. Auger analysis indicated that SiO2 maintained excellent thermal stability after annealing to 700°C. The Si/O ratio of SiO in the film increased when annealed to 700°C. Ellipsometry also revealed greater refractive index variance across the sample for SiO, as compared to SiO2. However, thickness variation of both films was ≤ 2% across the wafer. Ellipsometry data also showed great thermal stability of SiO and SiO2. There was <4% change after 700°C annealing.

scholarly journals Synthesis, structure and thermal stability of a mesoporous titanium(III) amine containing MOF with improved hydrogen sorption properties

2021 ◽  
Author(s):  
Timothy Steenhaut ◽  
Séraphin Lacour ◽  
Gabriella Barozzino-Consiglio ◽  
Koen Robeyns ◽  
Robin Crits ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Inductively Coupled Plasma ◽  
Metal Organic Framework ◽  
Thermal Gravimetric ◽  
Inductively Coupled ◽  
Metal Organic ◽  
Solvothermal Conditions ◽  
Structurally Stable ◽  
Thermal Stability Of

The first mesoporous bimetallic TiIII/Al metal-organic framework (MOF) containing amine functionalities on its linkers has been selectively obtained by converting the cheap commercially available (TiCl3)3AlCl3 into Ti3-xAlxCl3(THF)3 and reacting this complex with 2-aminoterephthalic acid in DMF under soft solvothermal conditions. This compound is structurally related to the previously described NH2-MIL-101(M) (M = Cr, Al and Fe) MOFs. Thermal gravimetric analyses and in situ PXRD measurements demonstrated that this highly air-sensitive TiIII-containing MOF is structurally stable up to 200°C. Nuclear magnetic resonance (NMR) spectroscopy, elemental and inductively-coupled plasma (ICP) analyses revealed that NH2-MIL-101(TiIII) contains trinuclear Ti3(μ3-O)Cl(DMF)2(RCOO)6 clusters with strongly bound DMF molecules, and a small amount of aluminum. Sorption experiments reveal a higher affinity of this MOF for hydrogen compared to the previously described monometallic unfunctionalized MIL-101(TiIII) MOF.

Comparison Of Dry-Etch Techniques For Gan, Inn, And Ain

1997 ◽  
Vol 483 ◽  
Author(s):  
R. J. Shul ◽  
G. A. Vawter ◽  
C. G. Willison ◽  
M. M. Bridges ◽  
J. W. Lee ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
High Plasma ◽  
Group Iii ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Dry Etch

AbstractFabrication of group-III nitride devices relies on the ability to pattern features to depths ranging from ∼1000 Å to > 5 μm with anisotropic profiles, smooth morphologies, selective etching of one material over another, and a low degree of plasma-induced damage. In this study, GaN etch rates and etch profiles are compared using reactive ion etch (RIE), reactive ion beam etching (RIBE), electron cyclotron resonance (ECR), and inductively coupled plasma (ICP) etch systems. RIE yielded the slowest etch rates and sloped etch profiles despite dc-biases > −900 V. ECR and ICP etching yielded the highest rates with anisotropic profiles due to their high plasma flux and the ability to control ion energies independently of plasma density. RIBE etch results also showed anisotropic profiles with slower etch rates than either ECR or ICP possibly due to lower ion flux. InN and AIN etch characteristics are also compared using ICP and RIBE.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

scholarly journals Sidewall Slope Control of InP Via Holes for 3D Integration

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 89
Author(s):  
Jongwon Lee ◽  
Kilsun Roh ◽  
Sung-Kyu Lim ◽  
Youngsu Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Sio2 Layer ◽  
Etch Depth ◽  
Rf Power ◽  
3D Integration ◽  
Inductively Coupled ◽  
Wide Range ◽  
Via Holes ◽  
Dry Etch ◽  
Icp Etcher

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of the InP via holes in a wide range of 36 to 69 degrees is possible by changing the RF power in the etcher and introducing a wet-etched SiO2 layer with a small sidewall slope of 2 degrees; this wide slope control is due to the change of InP-to-SiO2 selectivity with RF power.

Thermal Stability of Solid Aluminum Electrolytic Capacitors with Conductive Polyaniline Counter Electrode

2012 ◽  
Vol 512-515 ◽  
pp. 1018-1021
Author(s):  
Xu Fei Zhu ◽  
Long Fei Jiang ◽  
Wei Xing Qi ◽  
Chao Lu ◽  
Ye Song
Keyword(s):  
Thermal Stability ◽  
Counter Electrode ◽  
Electrolytic Capacitor ◽  
Aluminum Electrolytic Capacitor ◽  
Dodecylbenzenesulfonic Acid ◽  
Excellent Thermal Stability ◽  
High Frequencies ◽  
Solid Aluminum ◽  
Good Thermal Stability ◽  
Thermal Stability Of

To overcome the risk of electrolyte leakage and the shortcoming of higher impedance at high frequencies for the conventional aluminum electrolytic capacitor impregnated with electrolyte solutions, solid aluminum electrolytic capacitor employing conducting polyaniline (PANI) as a counter electrode was developed. The as-fabricated solid capacitors have very low impedances at high frequencies and excellent thermal stability. The superior performances can be ascribed to high conductivity and good thermal stability of the camphorsulfonic acid (CSA)-dodecylbenzenesulfonic acid (DBSA) co-doped PANI.

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

2009 ◽  
Vol 615-617 ◽  
pp. 663-666
Author(s):  
In Ho Kang ◽  
Wook Bahng ◽  
Sung Jae Joo ◽  
Sang Cheol Kim ◽  
Nam Kyun Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Annealing Process ◽  
Activation Process ◽  
Electrical Characteristics ◽  
Inductively Coupled ◽  
Edge Termination ◽  
Post Annealing ◽  
Surface Damages ◽  
Dry Etch

The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

Low Bias Dry Etching of Sic and Sicn in ICP NF3 Discharges

1998 ◽  
Vol 512 ◽  
Author(s):  
J. J. Wang ◽  
Hyun Cho ◽  
E. S. Lambers ◽  
S. J. Peartont ◽  
M. Ostling ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Flux ◽  
Pattern Transfer ◽  
Plasma Composition ◽  
Source Power ◽  
Ion Energy ◽  
Trade Off ◽  
Inductively Coupled ◽  
Extensive Surface ◽  
Etch Rates

ABSTRACTA parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.8N0.2 in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power reaching 3500Å·min−1 for SiC and 7500 Å·min−1 for SiCN. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tinoxide( ITO) masks display relatively good etch selectivity over SiC(maximum of 70:1) while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions. The high ion flux available in the ICP tool allows etching even at very low dc self-biases, ≤ −10V, leading to very low damage pattern transfer.

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