Wet and Dry Etching of InGaP

1991 ◽  
Vol 240 ◽  
Author(s):  
J. R. Lothian ◽  
J. M. Kuo ◽  
S. J. Pearton ◽  
F. Ren
Keyword(s):  
Etch Rate ◽  
Smooth Surface ◽  
Etching Rate ◽  
Kcal Mole ◽  
Thermally Activated ◽  
Self Bias ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Surface Morphologies ◽  
Dry Etch

ABSTRACTThe wet chemical etching rates of InGaP in H3 PO4:HCL:H2O mixtures have been systematically measured as a function of etch formulation and are most rapid (-1 μm · min−1) for high HCl compositions. The etch rate, R, in a 1:1:1 mixture is thermally activated of the form R ∝ e−Ea/kT, where Ea = 11.25 kCal · mole−1. This is consistent with the etching being reaction-limited at the surface. This etch mixture is selective for InGaP over GaAs. For chlorine-based dry etch mixtures (PCl3 /Ar or CCl2 F2 /Ar) the etching rate of InGaP increases linearly with DC self-bias on the sample, whereas CH4/H2-based mixtures produce slower etch rates. Selectivities of ≥500 for etching GaAs over InGaP are obtained under low bias conditions with PCl3/Ar, but the surface morphologies of InGaP are rough. Both CCl2F2/Ar and CH4/H2/Ar mixtures produce smooth surface morphologies and good (>10) selectivities for etching GaAs over InGaP.

Wet Chemical Etching of Zn-containing oxides and HfO2 for the fabrication of Transparent TFTs

2009 ◽  
Vol 1201 ◽  
Author(s):  
Jae-Kwan Kim ◽  
Jun Young Kim ◽  
Seung-Cheol Han ◽  
Joon Seop Kwak ◽  
Ji-Myon Lee
Keyword(s):  
Sulfuric Acid ◽  
Surface Morphology ◽  
Chemical Etching ◽  
Etch Rate ◽  
Room Temperature ◽  
Wet Chemical ◽  
Wet Chemical Etching

AbstractThe etch rate and surface morphology of Zn-containing oxide and HfO2 films after wet chemical etching were investigated. ZnO could be easily etched using each acid tested in this study, specifically sulfuric, formic, oxalic, and HF acids. The etch rate of IGZO was strongly dependent on the etchant used, and the highest measured etch rate (500 nm/min) was achieved using buffered oxide etchant at room temperature. The etch rate of IGZO was drastically increased when sulfuric acid at concentration greater than 1.5 molar was used. Furthermore, etching of HfO2 films by BF acid proceeded through lateral widening and merging of the initial irregular pits.

Fabrication of Smooth GaN-Based Laser Facets

1998 ◽  
Vol 537 ◽  
Author(s):  
D. A. Stocker ◽  
E. F. Schubert ◽  
K. S. Boutros ◽  
J. M. Redwing
Keyword(s):  
Surface Roughness ◽  
Chemical Etching ◽  
Field Effect ◽  
Etch Rate ◽  
Wet Etching ◽  
High Resistivity ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
P Type ◽  
Scanning Electron

AbstractA method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {1010}, {1011}, {1012}, and {1013}. The vertical {1010} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

scholarly journals Fluorine-based Inductively Coupled Plasma Etching of α-Ga2O3 Epitaxy Film

2021 ◽  
Vol 59 (2) ◽  
pp. 121-126
Author(s):  
Ji Hun Um ◽  
Byoung Su Choi ◽  
Woo Sik Jang ◽  
Sungu Hwang ◽  
Dae-Woo Jeon ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Smooth Surface ◽  
Vertical Sidewall ◽  
Source Power ◽  
Inductively Coupled ◽  
Process Pressure ◽  
Coupled Plasmas ◽  
Dry Etch

α-Ga2O3 has the largest bandgap (~5.3 eV) among the five polymorphs of Ga2O3 and is a promising candidate for high power electronic and optoelectronic devices. To fabricate various device structures, it is important to establish an effective dry etch process which can provide practical etch rate, smooth surface morphology and low ion-induced damage. Here, the etch characteristics of α-Ga2O3 epitaxy film were examined in two fluorine-based (CF4/Ar and SF6/Ar) inductively coupled plasmas. Under the same source power, rf chuck power and process pressure, an Ar-rich composition of CF4/Ar and an SF6-rich composition of SF6/Ar produced the highest etch rates. Monotonic increase in the etch rate was observed as the source power and rf chuck power increased in the 2CF4/13Ar discharges, and a maximum etch rate of ~855 Å/min was obtained at a 500 W source power, 250 W rf chuck power, and 2 mTorr pressure. A smooth surface morphology with normalized roughness of less than ~1.38 was achieved in the 2CF4/13Ar and 13SF6/2Ar discharges under most of the conditions examined. The features etched into the α-Ga2O3 layer using a 2CF4/13Ar discharge with 2 mTorr pressure showed good anisotropy with a vertical sidewall profile.

Nanostructured Amorphous Silicon on Metal Electrodes: Electrical and Optical Properties

2013 ◽  
Vol 1551 ◽  
pp. 61-66
Author(s):  
George A. Hernandez ◽  
Daniel Martinez ◽  
Stephen Patenaude ◽  
Michael C. Hamilton
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Chemical Etching ◽  
Metal Electrodes ◽  
Electrical And Optical Properties ◽  
Insulating Films ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Dry Etch ◽  
High Optical Absorption

ABSTRACTWe present two distinct methods to nanostructure the surface of amorphous silicon to produce unique, nanoscale surface features. One method is a dry etch process that employs a modified Bosch1 process on an advanced silicon etcher to produce needle-like features of amorphous silicon. Likewise, we also investigated metal-assisted wet chemical etching2 as an alternative method to nanostructure the amorphous silicon to produce porous-like features. The resulting surface topography leads to an optically black appearance over patterned or large areas. This is a result of the interspacing between each needle and pore that leads to a high optical absorption. Thus, we designate it as black amorphous silicon (b-a-Si). We have deposited and formed regions of b-a-Si on variety of insulating films and metal electrodes, including chrome and titanium. In this study, we characterize the electrical and optical properties of as-deposited amorphous silicon and nanostructured amorphous silicon.

The construction of orientation-dependent crystal growth and etch rate functions II: Application to wet chemical etching of silicon in potassium hydroxide

2000 ◽  
Vol 87 (12) ◽  
pp. 8732-8740 ◽  
Author(s):  
E. van Veenendaal ◽  
J. van Suchtelen ◽  
W. J. P. van Enckevort ◽  
K. Sato ◽  
A. J. Nijdam ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Chemical Etching ◽  
Potassium Hydroxide ◽  
Etch Rate ◽  
Rate Functions ◽  
Wet Chemical ◽  
Wet Chemical Etching

The ETCH Mechanism for Al2O3 in Fluorine and Chlorine Based RF Dry Etch Plasmas

1986 ◽  
Vol 68 ◽  
Author(s):  
W. G. M. van Den Hoek
Keyword(s):  
Bias Voltage ◽  
Etch Rate ◽  
Gas Flow ◽  
High Energy ◽  
Subsequent Removal ◽  
Rate Limiting Step ◽  
Limiting Step ◽  
Self Bias ◽  
Dry Etch ◽  
Rate Limiting

AbstractThe etch behaviour of Al2O3 was studied in Ar, CHF3/Ar, CF4/O2 and Cl2 low pressure RIE plasmas.The influence of dc self-bias voltage, wafer temperature, gas flow and pressure on the Al2O3 etch behaviour was investigated.This was compared with the etch behaviour of SiO2, Mo, Au and Si under the same conditions.It was found that even though aluminum does not form volatile fluorides addition of CHF3 to an Ar plasma resulted in a ninefold increase in the A12O3 etch rate.This compares to a fivefold increase in the SiO2 etch rate and a 20% decrease in Au etch rate.An A12O3 etch mechanism for fluorine based plasmas is proposed, comprising of the formation of AlFx and its subsequent removal under influence of high energy ion bombardment.The latter appears to be the rate limiting step.

Chemical Etching of AlN and InAlN in KOH Solutions

1996 ◽  
Vol 449 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Etch Rate ◽  
Molecular Beam ◽  
Order Of Magnitude ◽  
Metal Organic ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Wet Etch ◽  
Anneal Temperature

ABSTRACTWet chemical etching of A1N and InxAl1-xN was investigated in KOH-based solutions as a function of etch temperature, and material quality. The etch rates for both materials increased with increasing etch temperatures, which was varied from 20 °C to 80 °C. The crystal quality of A1N prepared by reactive sputtering was improved by rapid thermal annealing at temperatures to 1100 °C with a decreased wet etch rate of the material measured with increasing anneal temperature. The etch rate decreased approximately an order of magnitude at 80 °C etch temperature after a 1100 °C anneal. The etch rate for In0.19Al0.81N grown by Metal Organic Molecular Beam Epitaxy was approximately three times higher for material on Si than on GaAs. This corresponds to the superior crystalline quality of the material grown on GaAs. Etching of InxAl1-xN was also examined as a function of In composition. The etch rate initially increased as the In composition changed from 0 to 36%, and then decreased to 0 Å/min for InN. The activation energy for these etches is very low, 2.0 ± 0.5 kcal•mol-1 for the sputtered A1N. The activation energies for InAIN were dependent on In composition and were in the range 2–6 kcal mol-1. GaN and InN layers did not show any etching in KOH at temperatures up to 80 °C.

Dry and Wet Etch Processes for NiMnSb, LaCaMnO3 and Related Materials

1997 ◽  
Vol 494 ◽  
Author(s):  
J. Hong ◽  
J. J. Wang ◽  
E. S. Lambers ◽  
J. A. Caballero ◽  
J. R. Childress ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Smooth Surface ◽  
Dielectric Materials ◽  
Ion Density ◽  
Ion Energy ◽  
Sensor Devices ◽  
Etch Rates ◽  
Surface Morphologies ◽  
Wet Etch ◽  
Dry Etch

ABSTRACTA variety of plasma etching chemistries were examined for patterning NiMnSb Heusler thin films and associated A12O3 barrier layers. Chemistries based on SF6 and Cl2 were all found to provide faster etch rates than pure Ar sputtering. In all cases the etch rates were strongly dependent on both the ion flux and ion energy. Selectivities of ≥20 for NiMnSb over A12O3 were obtained in SF6-based discharges, while selectivities ≤5 were typical in Cl2 and CH4/H2 plasma chemistries. Wet etch solutions of HF/H2O and HNO3/H2SO4/H2O were found to provide reaction-limited etching of NiMnSb that was either non-selective or selective, respectively, to A12O3. In addition we have developed dry etch processes based on Cl2/Ar at high ion densities for patterning of LaCaMnO3 (and SmCo permanent magnet biasing films) for magnetic sensor devices. Highly anisotropie features are produced in both materials, with smooth surface morphologies. In all cases, SiO2 or other dielectric materials must be used for masking since photoresist does not retain its geometrical integrity upon exposure to the high ion density plasma.

scholarly journals Fabrication of Smooth GaN-Based Laser Facets

1999 ◽  
Vol 4 (S1) ◽  
pp. 799-804 ◽  
Author(s):  
D. A. Stocker ◽  
E. F. Schubert ◽  
K. S. Boutros ◽  
J. M. Redwing
Keyword(s):  
Chemical Etching ◽  
Field Effect ◽  
Etch Rate ◽  
Wet Etching ◽  
High Resistivity ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Image Position ◽  
P Type ◽  
Scanning Electron

A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using hotoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2.μm/min. The crystallographic GaN etch planes are {0001}, {100}, {10}, {10}, and {103}. The vertical {100} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

An Experimental Study of TMAH Etching Silicon for MEMS

2007 ◽  
Author(s):  
Feiyan Chen ◽  
Guoqing Hu ◽  
Baihai Wu
Keyword(s):  
Experimental Data ◽  
Silicon Wafer ◽  
Chemical Etching ◽  
Etching Rate ◽  
Etching Time ◽  
Fabrication Technology ◽  
Micro Fabrication ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Tmah Solution

In the process of Micro-Electrical-Mechanical System (MEMS), the anisotropic wet chemical etching rate of the silicon wafer is very important for fabricating MEMS to determine the fabricating method, processing and etching time. The etching rates of the silicon wafer in the TMAH solution with the different temperature are obtained in this paper. The micro-fabrication technology and micro-fabrication process are also discussed. In the same time, all experimental data are put forward in details.

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