Characterization of CdZnO/Si heterojunction photodiode prepared by pulsed laser deposition

The Cd[Formula: see text]Zn[Formula: see text]O thin films have been deposited on glass and Si substrates at room-temperature with different Cd contents (x = 0, 2%, 4% and 6 wt.%) by pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) analyses evidenced that the films possess polycrystalline and a hexagonal ZnO crystal structure for x = 0, 2% and 4% with a preferred orientation in the a-axis (101) direction, while films with a mixed hexagonal and cubic structure was revealed for x = 6 wt.%. Electrical measurement presented that the resistivity decreased with increased temperature and concentration of Cd. The deliberated activation energy was reduced was from 0.224 to 0.113 eV with increase doping concentration. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the fabricated Cd[Formula: see text]Zn[Formula: see text]O/p-Si heterojunction varied with the applied bias and the Cd concentration. The results of the values of built-in potential (V[Formula: see text]) and the ideality factor (n) increased with raising Cd concentration.

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High-Tc superconducting NbN films with low particulate density grown at 25 °C using pulsed laser deposition

Journal of Materials Research ◽

10.1557/jmr.2001.0168 ◽

2001 ◽

Vol 16 (5) ◽

pp. 1223-1226 ◽

Cited By ~ 12

Author(s):

Anupama B. Kaul ◽

Timothy D. Sands ◽

Theodore Van Duzer

Keyword(s):

Pulsed Laser Deposition ◽

Power Density ◽

Electrical Transport ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

High Tc ◽

Si Substrates ◽

High Laser

The growth and characterization of high-Tc NbN films formed on room temperature substrates by pulsed laser deposition is described. The growth was performed at a high laser power density (>5 × 108 W/cm2), where the enhanced reactivity of species in the plume is proposed as the mechanism for increased nitrogen incorporation in films on unheated substrates. The Tcs were 16.2 K on MgO and 13 K on SiNx/Si substrates. In addition to electrical transport measurements, the films were characterized using RBS and x-ray diffraction. The particulate density on films grown at high power density was significantly reduced, which is correlated with the Nb target having a smoother morphology, characteristic of a quenched molten surface layer in the ablated area.

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Characterization of low resistivity Ga-doped ZnO thin films on Si substrates prepared by pulsed laser deposition

Materials Research Express ◽

10.1088/2053-1591/ab3a6c ◽

2019 ◽

Vol 6 (10) ◽

pp. 106421

Author(s):

Guankong Mo ◽

Jiahui Liu ◽

Guotao Lin ◽

Zhuoliang Zou ◽

Zeqi Wei ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Low Resistivity ◽

Si Substrates ◽

Doped Zno

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Stability and Structural Characterization of Epitaxial NdNiO3 Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-658-gg3.27 ◽

2000 ◽

Vol 658 ◽

Cited By ~ 2

Author(s):

Trong-Duc Doan ◽

Cobey Abramowski ◽

Paul A. Salvador

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Substrate Surface ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

Force Microscopy ◽

Atomic Force ◽

Monoclinic Distortion

ABSTRACTThin films of NdNiO3 were grown using pulsed laser deposition on single crystal substrates of [100]-oriented LaAlO3 and SrTiO3. X-ray diffraction and reflectivity, scanning electron microscopy, and atomic force microscopy were used to characterize the chemical, morphological and structural traits of the thin films. Single-phase epitaxial films are grown on LaAlO3 and SrTiO3 at 625°C in an oxygen pressure of 200 mTorr. At higher temperatures, the films partially decompose to Nd2NiO4 and NiO. The films are epitaxial with the (101) planes (orthorhombic Pnma notation) parallel to the substrate surface. Four in-plane orientational variants exist that correspond to the four 90° degenerate orientations of the film's [010] with respect to the in-plane substrate directions. Films are observed to be strained in accordance with the structural mismatch to the underlying substrate, and this leads, in the thinnest films on LaAlO3, to an apparent monoclinic distortion to the unit cell.

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ZrC Thin Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-780-y3.13 ◽

2003 ◽

Vol 780 ◽

Author(s):

V. Craciun ◽

D. Craciun ◽

J. M. Howard ◽

R. K. Singh

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Pulsed Laser ◽

Surface Region ◽

Laser Deposition ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates ◽

Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

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Pulsed Laser Deposition of Collagen Thin Films

MRS Proceedings ◽

10.1557/proc-414-65 ◽

1995 ◽

Vol 414 ◽

Cited By ~ 1

Author(s):

J. A. Conklin ◽

C. M. Cotell ◽

T. W. Barnett ◽

D. C. Hansen

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Helical Structure ◽

Film Deposition ◽

Laser Deposition ◽

X Ray Diffraction ◽

Deposition Parameter ◽

Si Substrates ◽

Vapor Quenching

AbstractThin films of collagen were prepared by pulsed laser deposition (PLD) at room temperature on Si substrates using a KrF laser (248 nm) over a fluence range from 0.2–1.5 Jcm-2. The effects on film composition and morphology of ambient gas (Ar, Ar/H2O vapor), quenching atmosphere (Ar, Ar/H2O vapor), and fluence were examined. Fourier transform infrared spectroscopy (FT- IR) demonstrated that, independent of deposition parameter, the PLD films contained the characteristic Amide I and II functionalities of the collagen target and indicated that the secondary structure was altered by the PLD process. The surface morphology of the films was a function of the laser fluence and the gas environment during either film deposition or quenching at the end of deposition. Preliminary gel electrophoresis examination of deposited films suggested the collagen had not maintained the triple helical structure of the native collagen. X-Ray diffraction (XRD) indicated that all of the films, deposited under any conditions, were predominantly amorphous.

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Fabrication of Electrically Active Si-based Thin Films by Pulsed Laser Deposition of SiO/C Dual Targets

MRS Proceedings ◽

10.1557/proc-1148-pp03-39 ◽

2008 ◽

Vol 1148 ◽

Author(s):

Yusaburo Ono ◽

Yushi Kato ◽

Yasuyuki Akita ◽

Makoto Hosaka ◽

Naoki Shiraishi ◽

...

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

Glass Substrates ◽

Si Nanocrystals ◽

Current Voltage ◽

Conduction Behavior

AbstractWe investigated the fabrication of Si nanocrystals, including thin films, by annealing the SiO/C/SiO thin films in an Ar atmosphere. The SiO/C/SiO trilayered thin films were deposited on α-Al2O3 (0001), Si (111), or ITO-coated borosilicate glass substrates at room temperature by pulsed laser deposition using dual sintered SiO and graphite targets. The SiO/C/SiO thin films subjected to heat treatment at 500°C included nanocrystalline Si. Measurements by synchrotron radiation X-ray diffraction indicated the formation of Si nanocrystals having a size of 5–10 nm. Fourier transform infrared spectra showed that Si–O stretching and vibrational peak intensities of the as-deposited thin film decreased remarkably after annealing. The C layer in the SiO/C/SiO trilayered thin films is considered to play a role in enhancing the chemical reaction that produces Si nanocrystals through reduction of SiO during heat treatment. The annealed SiO/C-based thin films, including Si nanocrystals, exhibited photosensitive conduction behavior in current–voltage measurements.

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Pulsed Laser Deposition of Undoped and Ag-Doped Stacked Structures of YBaCuO for Bolometer Device Applications

MRS Proceedings ◽

10.1557/proc-526-269 ◽

1998 ◽

Vol 526 ◽

Author(s):

D. E. Moxey ◽

R. Kalyanaraman ◽

A. Sharma ◽

J. Narayan ◽

C. B. Lee ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

Electrical Measurements ◽

Superconducting Layer ◽

Device Applications ◽

And Diffusion

AbstractIn this paper we report our investigations related to the growth and characterization of superconducting stacked structures of YBaCuO(undoped)/YBaCuO(Ag-doped)/YSZ layers processed on Si(100) substrates. These films were deposited using pulsed laser deposition (PLD), and have been characterized using X-ray diffraction, scanning electron microscopy (SEM), and four probe electrical measurements. SIMS analysis has also been used to study the incorporation and diffusion of carbon in the superconducting layer. The focus of this work is on the issues of the role of silver in the superconductor, and its effects on the transport properties and microstructure of the structure. We also discuss the use of these films for bolometer device applications.

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Structural and textural characterization of LiFePO4 thin films prepared by pulsed laser deposition on Si substrates

Thin Solid Films ◽

10.1016/j.tsf.2010.04.011 ◽

2010 ◽

Vol 518 (19) ◽

pp. 5447-5451 ◽

Cited By ~ 15

Author(s):

C. Legrand ◽

L. Dupont ◽

K. Tang ◽

H. Li ◽

X.J. Huang ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Si Substrates ◽

Textural Characterization

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PREPARATION AND CHARACTERIZATION OF LaFeO3 THIN FILMS ON (100) SrTiO3 SUBSTRATES BY PULSED LASER DEPOSITION

Journal of Advanced Dielectrics ◽

10.1142/s2010135x11000379 ◽

2011 ◽

Vol 01 (03) ◽

pp. 363-367 ◽

Cited By ~ 2

Author(s):

HONG LIU ◽

JIANGUO ZHU ◽

DINGQUAN XIAO

Keyword(s):

Pulsed Laser Deposition ◽

Quantum Interference ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron

A single-crystalline, crack-free, epitaxial (100)c LaFeO3 films were in situ grown by pulsed laser deposition on (100) SrTiO3 substrates. X-ray diffraction, atomic force microscopy and transmission electron microscopy reveal that the LaFeO3 films have high crystalline quality, a very smooth surface, and an atomically sharp LaFeO3/SrTiO3 interface. The magnetic properties of the LaFeO3 films were obtained by a superconducting quantum interference device magnetometry. The saturated magnetization and coercive field of LaFeO3 films are 14 emu/cm3 and 600 Oe, respectively.

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