A Quasi-2d Model for Reverse Short Channel Effect

1998 ◽  
Vol 532 ◽  
Author(s):  
Huilong Zhu
Keyword(s):  
Quantitative Agreement ◽  
Sink Strength ◽  
Short Channel Effects ◽  
Short Channel ◽  
Physically Based Model ◽  
Stress Effects ◽  
Implantation Damage ◽  
Physically Based ◽  
Channel Effects ◽  
Doping Profiles

ABSTRACTA new physically-based model for reverse short channel effects has been developed. This kinetic model considers three species: neutral interstitial, immobile dopant and mobile interstitial-dopant pairs. To consider ion-implantation damage and stress effects on the Si/SiO2 interface, a non-uniform sink strength at the Si/SiO2 interface for interstitials has been assumed. ALAMODE, a PDE solver, was used to solve the model. Lateral boron distributions of NMOS devices in the channel near the Si/SiO2 interface have been simulated. Significant boron pile-up was found at the gate edges which is in quantitative agreement with the doping profiles extracted from experimental C-V data. The mechanism of the B diffusion in the channel region is discussed.

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

2007 ◽  
Vol 54 (8) ◽  
pp. 1943-1952 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
C.A. Dimitriadis ◽  
R. Clerc ◽  
Q. Rafhay ◽  
G. Pananakakis ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Short-channel effects in SOI MOSFETs

1989 ◽  
Vol 36 (3) ◽  
pp. 522-528 ◽  
Author(s):  
S. Veeraraghavan ◽  
J.G. Fossum
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

scholarly journals The Effect of Doping on Different FET Structures: MOSFET, TFET and FinFET

2020 ◽  
Vol 9 (6) ◽  
pp. 972-979
Keyword(s):  
Drain Current ◽  
Channel Length ◽  
Short Channel Effects ◽  
Poor Control ◽  
Short Channel ◽  
Circuit Performance ◽  
The Past ◽  
Channel Effects ◽  
Circuit Density ◽  
Effect Of Doping

MOSFET have been scaled down over the past few years in order to give rise to high circuit density and increase the speed of circuit. But scaling of MOSFET leads to issues such as poor control gate over the current which depends on gate voltage. Many short channel effects (SCE) influence the circuit performance and leads to the indeterminist response of drain current. These effects can be decreased by gate excitation or by using multiple gates and by offering better control gate the device parameters. In Single gate MOSFET, gate electric field decreases but multigate MOSFET or FinFET provides better control over drain current. In this paper, different FET structures such as MOSFET, TFET and FINFET are designed at 22nm channel length and effect of doping had been evaluated and studied. To evaluate the performance donor concentration is kept constant and acceptor concentration is varied.

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