Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates

1998 ◽  
Vol 535 ◽  
Author(s):  
P. Kopperschmidt ◽  
S T. Senz ◽  
R. Scholz ◽  
G. Kästner ◽  
U. Gösele ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Strain Relaxation ◽  
Twist Angle ◽  
Gaas Layer ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Compliant Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Epitaxial Deposition

AbstractWe realized “compliant” substrates in the square centimeter range by twist-wafer bonding of an (100) GaAs handle wafer to another (100) GaAs wafer with a several nm thick epitaxially grown GaAs layer followed by an appropriate back-etch procedure. The twist angle between the two GaAs wafers was chosen between 4 and 15 degrees. The twisted layers were characterized by area scanned X-ray diffraction, optical and electron microscopy and atomic force microscopy. Occasionally we observed regions showing pinholes in the transferred thin twistbonded GaAs layer.After epitaxial deposition of 300 nm InP and InGaAs films with different degrees of mismatch on these substrates, transmission electron microscopy revealed grains which are epitaxially oriented to either the substrate or the twist-bonded layer. The grain boundaries between the twisted and untwisted grains probably collect threading dislocations, thus reducing their density in the areas free of boundaries.

Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy

2020 ◽  
Vol 98 (5) ◽  
pp. 365-375
Author(s):  
Andrea Quintero ◽  
Patrice Gergaud ◽  
Jean-Michel Hartmann ◽  
Vincent Delaye ◽  
Nicolas Bernier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

(G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1750-1750
Author(s):  
Andrea Quintero Colmenares ◽  
Patrice Gergaud ◽  
Jean-Michel Hartmann ◽  
Vincent Delaye ◽  
Nicolas Bernier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ex Situ ◽  
Paper Award ◽  
X Ray Diffraction ◽  
Award Winner ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure

2015 ◽  
Vol 821-823 ◽  
pp. 213-216
Author(s):  
S.M. Ryndya ◽  
N.I. Kargin ◽  
A.S. Gusev ◽  
E.P. Pavlova
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Selected Area Electron Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Influence Of Substrate ◽  
Composition Structure

Silicon carbide thin films were obtained on Si (100) and (111) substrates by means of vacuum laser ablation of α-SiC ceramic target. The influence of substrate temperature on composition, structure and surface morphology of experimental samples was examined using Rutherford backscattering spectrometry (RBS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM), atomic force microscopy (AFM), selected area electron diffraction (SAED) and X-ray diffraction (XRD) methods.

scholarly journals Ultrashort Pulsed Laser Ablation of Magnesium Diboride: Plasma Characterization and Thin Films Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Angela De Bonis ◽  
Agostino Galasso ◽  
Antonio Santagata ◽  
Roberto Teghil
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Optical Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Target ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A MgB2target has been ablated by Nd:glass laser with a pulse duration of 250 fs. The plasma produced by the laser-target interaction, showing two temporal separated emissions, has been characterized by time and space resolved optical emission spectroscopy and ICCD fast imaging. The films, deposited on silicon substrates and formed by the coalescence of particles with nanometric size, have been analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction. The first steps of the films growth have been studied by Transmission Electron Microscopy. The films deposition has been studied by varying the substrate temperature from 25 to 500°C and the best results have been obtained at room temperature.

Optical Properties and Defect Structure of MOVPE InGaN Films

1999 ◽  
Vol 588 ◽  
Author(s):  
A. Cremades ◽  
M. Albrecht ◽  
J. M. Ulloa ◽  
J. Piqueras ◽  
H. P. Strunk ◽  
...  
Keyword(s):  
Optical Properties ◽  
Strain Relaxation ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
X Ray Diffraction ◽  
Band Bending ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Piezoelectric Fields

AbstractA series of 100 nm thick InGaN films with In content up to 14% has been grown by MOVPE on SiC substrates. Optical characterization was carried out by means of reflectance spectrometry, photoluminescence and cathodoluminescence. Optical properties of the samples have been correlated with the microstructural properties measured by atomic force microscopy, transmission electron microscopy and X-ray diffraction data. Results indicate a dependence of the optical properties on the In content in the sample, as well as on the residual stress in the films induced by Indium incorporation. Part of the strain is reduced elastically by formation of pinholes which reach the InGaN/GaN interface, where first misfit dislocations are observed to form. Our results show that luminescence is directly correlated with the strain distribution in the layers. Pinholes are observed to act as nonradiative recombination sites for carriers, while strain relaxation around pinholes may enhance luminescence emission. We discuss the influence of strain with respect to In incorporation, the appearance of piezoelectric fields and effects due to strain induced band bending.

Influence of Substrate Miscut on the Island Formation Process in In0.2Ga0.8As/GaAs Multilayers

2003 ◽  
Vol 10 (02n03) ◽  
pp. 263-270
Author(s):  
E. Gartstein ◽  
D. Mogilyanski ◽  
D. Barlam
Keyword(s):  
Strain Relaxation ◽  
Relaxation Processes ◽  
X Ray Diffraction ◽  
Element Analysis ◽  
Island Nucleation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Initial Substrate ◽  
Influence Of Substrate

LPOMVPE-grown In0.2Ga0.8As/GaAs multilayers on GaAs substrates with miscut values of 0°, 0.3° and 2° around the [100] azimuthal direction were investigated by employing X-ray diffraction techniques complemented by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The step-terrace structure evolving on the interfaces upon deposition strongly depends on the initial substrate morphology. The initiation of island nucleation, and both lateral and vertical ordering are related to the interfacial morphological parameters. Finite element analysis (FEA) is performed to elucidate the interplay between structural and strain relaxation processes.

Investigation of ZnFe2O4 Nanoparticles Prepared by High Energy Milling

2009 ◽  
Author(s):  
S. S. Srinivasan ◽  
N. Kislov ◽  
Yu. Emirov ◽  
D. Y. Goswami ◽  
E. K. Stefanakos
Keyword(s):  
Electron Microscopy ◽  
Particle Size ◽  
Energy Gap ◽  
Blue Shift ◽  
High Energy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Coefficient Estimation ◽  
Transmission Electron

Nanoparticles of Zinc Ferrite (ZnFe2O4) prepared by both wet- and dry- high-energy ball milling (HEBM), have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), surface area and pore size distribution (BET) and wavelength-dependent diffuse reflectance and scattering turned into absorption coefficient estimation using the Kubelka-Munk theory. It was found that after 72 hours of HEBM, the particle size was decreased from 220 nm for the initial material to 16.5 nm and 9.4 nm for the wet- and dry-milled samples, respectively. The optical absorption analysis revealed that the energy gap is increased (blue shift) by 0.45 eV for wet-milled and decreased (“anomalous” red shift) by 0.15 eV for dry-milled samples of ZnFe2O4 as the particle size decreased.

scholarly journals SYNTHESIS OF NANO-ALUMINUM OXIDE VIA BIOLOGICAL AND ELECTROCHEMICAL METHODS

2019 ◽  
Vol 29 (4) ◽  
pp. 67
Author(s):  
Barakat A. F. Kamel
Keyword(s):  
Electron Microscopy ◽  
Aluminum Oxide ◽  
Pathogenic Bacteria ◽  
Research Work ◽  
Alumina Nanoparticles ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Stable Particles

In this research work, the nanoparticles of aluminum oxide were synthesized by two ways. The first way is the biological by using (Pseudomonas aeruginosa) bacteria with a rate diameter (102.35) nm. The second way is the electrochemical with a rate diameter (62) nm. These nanoparticles were characterized by Atomic Force Microscopy (AFM), X-Ray diffraction technique (XRD), Transmission Electron Microscopy (TEM) and Scanninig Electron Microscopy (SEM). Alumina nanoparticles are thermodynamically stable particles over a wide temperature range . The biological activity of these nanoparticles toward different species of pathogenic bacteria (Staphylococcus aureus ) and (Pseudo monas) has been investigated. The results stated that the nanoparticles prepared by chemical way was more effective on the inhibition of bacteria than the nanoparticles prepared by biological way

Structural Investigation of Hydrous TiO2Precipitates and Their Aging Products by X-ray Diffraction, Atomic Force Microscopy, and Transmission Electron Microscopy

1998 ◽  
Vol 37 (4) ◽  
pp. 1317-1323 ◽  
Author(s):  
Juho-Pertti Jalava ◽  
Lauri Heikkilä ◽  
Oskari Hovi ◽  
Reino Laiho ◽  
Erkki Hiltunen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Structural Investigation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Preparation of a P(FcA-co-ANI)/graphene composite for application in supercapacitors

2016 ◽  
Vol 29 (5) ◽  
pp. 524-532 ◽  
Author(s):  
Yunlong Li ◽  
Yuying Zheng
Keyword(s):  
Electron Microscopy ◽  
Electrochemical Impedance ◽  
Proton Nuclear Magnetic Resonance ◽  
Diffusion Resistance ◽  
X Ray Diffraction ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Surface Morphologies

A conducting copolymer of 1,1′-ferrocenediacyl anilide and aniline (P(FcA-co-ANI)) was synthesized, which had a conjugated structure and ferrocene moieties in the main chain. The monomer and copolymer were characterized using proton nuclear magnetic resonance and Fourier-transform infrared (FTIR) spectroscopies. A P(FcA-co-ANI)/reduced graphene oxide (rGO) composite was synthesized by oxidation polymerization, using rGO as a substrate. The characteristic peaks of P(FcA-co-ANI) and rGO were observed in the FTIR spectrum of P(FcA-co-ANI)/rGO. The X-ray diffraction pattern of P(FcA-co-ANI)/rGO exhibited similar peaks to the pattern of P(FcA-co-ANI), except for the absence of the weak broad peak at 9.0° owing to rGO. The surface morphologies of the materials were characterized by atomic force microscopy, transmission electron microscopy and scanning electron microscopy. The interlayer distances of rGO and P(FcA-co-ANI)/rGO were 0.96 and 1.38 nm, respectively. The morphology of the copolymer was spherical, and it contained island structures covering the surface of the graphene layers. The electrochemical properties of the composite were measured by cyclic voltammetry, galvanostatic charge–discharge measurements and electrochemical impedance spectroscopy. The maximum specific capacitance of the composite was 722.5 F/g at 0.5 A/g. The diffusion resistance was very small, and the composites durability was sufficient for subjecting to prolonged oxidation and reduction.

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