scholarly journals Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga

2010 ◽  
Vol 638-642 ◽  
pp. 2938-2943 ◽  
Author(s):  
A.V. Mogilatenko ◽  
Frank Allenstein ◽  
M.A. Schubert ◽  
Meiken Falke ◽  
G. Beddies ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Nickel Silicide ◽  
Subsequent Annealing ◽  
Formation Temperature ◽  
Transmission Electron

Thin Ni/Al and Ni/Ga layers of different atomic ratios were codeposited onto Si(001) at room temperature followed by subsequent annealing. Influence of annealing temperature on morphology and composition of ternary disilicide NiSi2-xAlx and NiSi2-xGax layers was investigated by transmission electron microscopy. Addition of Al or Ga leads to a decrease of the disilicide formation temperature from 700°C down to at least 500°C. Depending on the composition closed, uniformly oriented NiSi2-xAlx and NiSi2-xGax layers were observed after annealing at 900°C, whereas reaction of a pure Ni film with Si leads to the island formation with a mixture of A- and B-type orientations.

(111)p microtwinning in SrRuO3 thin films on (001)p LaAlO3

2009 ◽  
Vol 65 (6) ◽  
pp. 694-698 ◽  
Author(s):  
Y. Han ◽  
I. M. Reaney ◽  
D. S. Tinberg ◽  
S. Trolier-McKinstry
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Orientation Relationship ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Zone Axis ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Diffraction Patterns

SrRuO3 (SRO) thin films grown on (001)p (p = pseudocubic) oriented LaAlO3 (LAO) by pulsed laser deposition have been characterized using transmission electron microscopy. Observations along the 〈100〉p directions suggests that although the SRO layer maintains a pseudocube-to-pseudocube orientation relationship with the underlying LAO substrate, it has a ferroelastic domain structure associated with a transformation on cooling to room temperature to an orthorhombic Pbnm phase (a − a − c + Glazer tilt system). In addition, extra diffraction spots located at ±1/6(ooo)p and ±1/3(ooo)p (where `o' indicates an index with an odd number) positions were obtained in 〈110〉p zone-axis diffraction patterns. These were attributed to the existence of high-density twins on {111}p pseudocubic planes within the SrRuO3 films rather than to more conventional mechanisms for the generation of superstructure reflections.

Transmission electron microscopy study of Ge implanted into SiC

2002 ◽  
Vol 17 (2) ◽  
pp. 479-486 ◽  
Author(s):  
T. Gorelik ◽  
U. Kaiser ◽  
Ch. Schubert ◽  
W. Wesch ◽  
U. Glatzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Structural Changes ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Transmission Electron Microscopy Study ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Means Of Transmission

Hexagonal 6H– and 4H–SiC wafers were implanted with (1−1.5) × 1016 cm−2 germanium ions at room temperature and at 700 °C with subsequent annealing between 1000 and 1600 °C. Structural changes in the SiC matrix were studied in detail by means of transmission electron microscopy (TEM). After implantation at room temperature the hexagonal SiC matrix becomes amorphous and, after annealing, recrystallizes into cubic SiC. The latter process was accompanied by the creation of voids and cracks. In case of high-temperature (700 °C) implantation, where amorphization was avoided, no polytype change in as-implanted and annealed SiC wafers was observed. In annealed samples nanocrystalline precipitates with high Ge content were observed in high-resolution TEM images.

RBS, TEM and SEM Characterization of Gold Nanoclusters in TiO2(110)

2003 ◽  
Vol 792 ◽  
Author(s):  
V. Shutthanandan ◽  
Y. Zhang ◽  
C. M. Wang ◽  
J. S. Young ◽  
L. Saraf ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Gold Nanoclusters ◽  
Subsequent Annealing ◽  
Transmission Electron ◽  
Scanning Electron

ABSTRACTNucleation of gold nanoclusters in TiO2(110) single crystal using ion implantation and subsequent annealing were studied by Rutherford backscattering spectrometry /channeling (RBS/C), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Approximately 1000 Au2+/nm2 were implanted at room temperature in TiO2(110) substrates. TEM and SEM measurements reveal that rounded nanoclusters were formed during the implantation. In contrast, subsequent annealing in air for 10 hours at 1275 K promoted the formation of faceted (rectangular shaped) Au nanostructures in TiO2. RBS channeling measurements further reveled that Au atoms randomly occupied the host TiO2 lattice during the implantation. However, it appears that some Au atoms moved to the Ti lattice positions after annealing.

Investigation of Intermetallic Phase Formation and Structural Analysis in Annealed Al/Cu Bilayer Thin Films

2013 ◽  
Vol 845 ◽  
pp. 221-225
Author(s):  
Zulhelmi Alif Abdul Halim ◽  
Muhammad Azizi Mat Yajid ◽  
Zulkifli Mohd Rosli ◽  
Riyaz Ahmad Mohamad Ali
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Structural Analysis ◽  
Annealing Temperature ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
X Ray ◽  
Transmission Electron

The growth of intermetallic phases in Al/Cu bilayers thin film having 2/3 layer thickness ratios were characterized by X-ray powder diffraction (XRD), energy dispersive X-ray (EDX) and transmission electron microscopy (TEM). In annealing temperature of 200 °C, the growth is controlled by Cu diffusion which resulted to formation of θ-Al2Cu, η-AlCu, ζ-Al3Cu4 and γ-Al4Cu9 phase.

Interactions Of Evaporated Nickel And Silicon Thin Films

1985 ◽  
Vol 54 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Formation Temperature ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Amorphous Si ◽  
The Stability

ABSTRACTInteractions of evaporated Ni and Si thin films were investigated by a combination of backseat tering spectrometry and transmission electron microscopy. The presence of amorphous Si has no significant effects on Ni2Si and NiSi formation, but it drastically lowers the formation temperature of NiSi. Experiments with evaporated thin markers established that Ni is the dominant diffusing species in the growth of the three suicides. The stability of NiSi was examined by sequential evaporation of Ni34Si66 and Ni50Si50 thin films both on Si(100) and on evaporated Si substrates. The results showed that NiSi2 grows at the expence of NiSi when the stucture is in contact with evaporated Si, while it dissociates into NiSi and Si when in contact with single crystal Si.

Kinetics of Vacancy Ordering in YSi2−x Thin Film on Silicon

1991 ◽  
Vol 230 ◽  
Author(s):  
T. L. Lee ◽  
L. J. Chen ◽  
F. R. Chen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Stacking Faults ◽  
Step Structure ◽  
Transmission Electron ◽  
Vacancy Ordering ◽  
Kinetics Of

AbstractHigh resolution and conventional transmission electron microscopy have been applied to study the interfacial reaction of yttrium thin films on Si. Epitaxial Ysi2−x film was grown on (111)Si by rapid thermal annealing at 500–1000 °C. The orientation relationship between yttrium silicide and (111)Si was determined to be [0001]Ysi2−x//[111]Si and (1010)Ysi2−x//(112)Si. The vacancies in the Ysi2−x film were found to be ordered in the Si sublattice plane and form an out-of-step structure. The range of M values of the out-of-step structure was found to narrow with annealing temperature and time. Defects along specific crystallographic directions were observed and analyzed to be intrinsic stacking faults.

The reaction between a TiNi shape memory thin film and silicon

1997 ◽  
Vol 12 (7) ◽  
pp. 1734-1740 ◽  
Author(s):  
Susanne Stemmer ◽  
Gerd Duscher ◽  
Christina Scheu ◽  
Arthur H. Heuer ◽  
Manfred Rühle
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Shape Memory ◽  
Nickel Silicide ◽  
Transmission Electron ◽  
Titanium Nickel ◽  
Sputter Deposited ◽  
Post Deposition

The reaction between shape-memory TiNi thin films and silicon has been characterized by conventional, analytical, and high-resolution transmission electron microscopy. A reaction layer is formed during the 525 °C post-deposition crystallization anneal of the sputter-deposited TiNi, and consists of several phases: Ti2Ni, a nickel silicide, and a ternary titanium nickel silicide. The mechanism for the interlayer formation is discussed.

scholarly journals Transmission electron microscopy investigation of interfacial reactions between SrFeO3 thin films and silicon substrates

2007 ◽  
Vol 22 (1) ◽  
pp. 76-88
Author(s):  
Dashan Wang ◽  
James J. Tunney ◽  
Xiaomei Du ◽  
Michael L. Post ◽  
Raynald Gauvin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Interfacial Reactions ◽  
Silicon Substrates ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Microscopy Characterization ◽  
Silicon Diffusion

The SrFeO3/SiO2/Si thin film system has been studied using transmission electron microscopy (TEM). The thin films of SrFeO3 were grown by pulsed laser deposition onto silicon substrates with a SiO2 buffer layer at room temperature (RT) and 700 °C and subjected to annealing for various periods of time at temperature T = 700 °C. Transmission electron microscopy characterization showed that the microstructure of the film deposited at room temperature contained crystalline and amorphous layers. Silicon diffusion into SrFeO3 films occurred at the SiO2 interface for the samples deposited at 700 °C and for those films annealed at 700 °C. The silicon diffusion-induced interfacial reactions resulted in the phase transformations and the growth of complex crystalline and amorphous phases. The principal compositions of these phases were Sr(Fe,Si)12O19, SrOx and amorphous [Sr-Fe-O-Si].

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