Epitaxial Formation of Rare Earth Silicides by Rapid Annealing

1985 ◽  
Vol 54 ◽  
Author(s):  
J. A. Knapp ◽  
S. T. Picraux
Keyword(s):  
Rare Earth ◽  
Solid Phase ◽  
Ion Beam ◽  
Epitaxial Films ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Random Array ◽  
Liquid Phase Reaction

ABSTRACTRapid electron beam and lamp heating have been used to form thin epitaxial films of rare-earth suicides by reacting overlayers of the rare earths with (111) Si substrates. Of the metals Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, all but Gd are found to form epitaxial suicide layers by rapid solid-phase reaction, while suicides of Gd, Dy, Tm, Yb and Lu have been formed epitaxially by liquid phase reaction. For all but Er this is the first demonstration of epitaxial growth on Si. Details obtained from ion beam channeling analysis and transmission electron microscopy confirm the expected epitaxial structure and also show that the Si vacancies in the suicide form an ordered superlattice, rather than a random array as had been assumed before.

The Synthesis and Properties Studying of 1-D TaS2 Nanostructure

2007 ◽  
Vol 353-358 ◽  
pp. 2139-2142
Author(s):  
Chang Sheng Li ◽  
Yan Qing Liu ◽  
Jun Mao Li
Keyword(s):  
Large Scale ◽  
Solid Phase ◽  
Average Diameter ◽  
Test System ◽  
Lubricating Oil ◽  
One Dimension ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Transmission Electron ◽  
Specimen Test

large-scale and elegant one-dimension tubular nanostructure TaS2, have been generated successfully employing solid-phase reaction growth with tantalum and sulfur powders. Detailed experimental procedures, and the characterization of associated product, have been evaluated using transmission electron microscopy (TEM) and other techniques. The results show that the reaction yielded a lot of one dimension nanostructures of TaS2 with average diameter of one hundred nanometers and length of several micrometers (or several ten micrometers). Moreover, effect of TaS2 nanostructure, as additive in commercial lubricating oil T40, was initially measured by UMT Multi-specimen Test System (UMT-2). The results show, as additive, antiwear and bearing weight ability of 1-D TaS2 nanostructure, excelled ordinary lubricating oil at atmosphere.

scholarly journals Formation Mechanism of High-Purity Ti2AlN Powders under Microwave Sintering

Materials ◽  
2020 ◽  
Vol 13 (23) ◽  
pp. 5356
Author(s):  
Weihua Chen ◽  
Jiancheng Tang ◽  
Xinghao Lin ◽  
Yunlong Ai ◽  
Nan Ye
Keyword(s):  
Electron Microscopy ◽  
Formation Mechanism ◽  
High Purity ◽  
Solid Phase ◽  
Raw Materials ◽  
Microwave Sintering ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Scanning Calorimetry ◽  
Transmission Electron

In the present study, high-purity ternary-phase nitride (Ti2AlN) powders were synthesized through microwave sintering using TiH2, Al, and TiN powders as raw materials. X-ray diffraction (XRD), differential scanning calorimetry (DSC), transmission electron microscopy (TEM), and scanning electron microscopy (SEM) were adopted to characterize the as-prepared powders. It was found that the Ti2AlN powder prepared by the microwave sintering of the 1TiH2/1.15Al/1TiN mixture at 1250 °C for 30 min manifested great purity (96.68%) with uniform grain size distribution. The formation mechanism of Ti2AlN occurred in four stages. The solid-phase reaction of Ti/Al and Ti/TiN took place below the melting point of aluminum and formed Ti2Al and TiN0.5 phases, which were the main intermediates in Ti2AlN formation. Therefore, the present work puts forward a favorable method for the preparation of high-purity Ti2AlN powders.

Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers

1988 ◽  
Vol 126 ◽  
Author(s):  
E. Kolawa ◽  
C. W. Nieh ◽  
W. Flick ◽  
J. Molarius ◽  
M-A. Nicolet
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Diffusion Barriers ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Resistivity Measurements ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTContacts to GaAs substrates with n-type epilayers formed by GaAs/Ni/Ge/WN/Au, GaAs/Ni/Ge/Ni/WN/Au and GaAs/Ge/ Ni/WN/Au systems were investigated. Ohmic contacts in these systems were formed by a solid-phase reaction between Ni/Ge and GaAs. Interfacial reaction and electrical properties of these contacts are characterized by backscattering spectrometry, transmission electron microscopy and contact resistivity measurements. Resistivities in the 10−δ Ω cm range are achieved.

Cobalt disilicide formed by rapid thermal annealing and throughmetal arsenic implantation

1991 ◽  
Vol 6 (9) ◽  
pp. 1892-1899 ◽  
Author(s):  
Edmund P. Burte ◽  
Min Ye
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metal Ion ◽  
Silicon Oxide ◽  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Cobalt Disilicide ◽  
Cobalt Silicides

Cobalt disilicide CoSi2 of a specific resistivity of 23 μω was formed by the solid phase reaction of cobalt and silicon in the phase sequence of Co2Si, CoSi, and CoSi2 by use of rapid thermal annealing. The through-metal arsenic implantation caused the mixing of cobalt with the silicon substrate and the formation of cobalt silicides. A significant lateral growth of cobalt silicides was observed in samples subjected to one-step rapid thermal annealing process at 900 °C without through-metal ion implantation. Ion beam mixing reduced this lateral silicide growth efficiently, but resulted in a higher density of cobalt atoms remaining in the silicon oxide film than after rapid thermal annealing, as revealed by vapor phase decomposition atomic absorption spectroscopy.

Thickness Dependent Phase Formation in Fe Thin Film and Si Substrate Solid Phase Reaction

1995 ◽  
Vol 402 ◽  
Author(s):  
G Y. Molnár ◽  
G. Pető ◽  
E. Zsoldos ◽  
Z. E. Horváth ◽  
N. Q. Khánh
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Phase Formation ◽  
Solid Phase ◽  
Iron Film ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Si Substrate ◽  
Transmission Electron ◽  
Initial Iron

AbstractThe solid phase reaction of Fe thin films with (111) Si substrate was investigated at constant annealing temperature and time (700°C, 7 minutes) as a function of the initial iron film thickness (from 5 nm to 27.5 um in 2.5 nm steps). The formed phases were analysed by X-ray diffraction, Rutherford backscattering and transmission electron microscopy and optical microscopy.After annealing FeSi phase was detected in the thinner samples. Samples with Fe layers thicker than 12.5 nm contained a β-FeSi2 phase. This special phase sequence was explained with the help of a nucleation controlled phase formation model, taking into consideration the critical radius of nuclei of the new phase. The advantages of using the film thickness as a variable during investigation of solid phase thin film reactions and the probable substrate effects are also discussed.

Solid-Phase Epitaxial Regrowth of GaAs by in-situ Controlled Intermediate Phase Decomposition

1998 ◽  
Vol 4 (S2) ◽  
pp. 634-635
Author(s):  
J.K. Farrer ◽  
D.A. Caldwell ◽  
C.J. Palmstrom ◽  
C.B. Carter
Keyword(s):  
Intermediate Phase ◽  
Solid Phase ◽  
Metal Layer ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Tem Analysis ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Subsequent Decomposition

A transmission electron microscopy (TEM) analysis on the regrowth of GaAs by a two-stage reaction between a metal layer (M) and a GaAs substrate is presented. The first stage of the regrowth process is the consumption of GaAs in a low temperature reaction with the metal layer, producing an intermediate phase of (MxGaAs). A second solid-phase reaction, induced by the deposition of Ga or As, results in the decomposition of the intermediate phase and the epitaxial regrowth of a layer of GaAs. The sample growth and reactions were performed in-situ in a molecular beam epitaxy system, using Ni for the metal and As deposition for the second reaction. TEM data confirm the formation of the ternary phase, NixGaAs, and its subsequent decomposition into NiAs and GaAs by reacting with the deposited As. A layer of AlGaAs, 100 nm thick, was grown in all samples as a marker.

Solid phase reaction and epitaxy of Gd-silicide films on Si substrates

1993 ◽  
Vol 70-71 ◽  
pp. 466-469 ◽  
Author(s):  
G. Molnár ◽  
G. Petö ◽  
E. Zsoldos
Keyword(s):  
Solid Phase ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Si Substrates

Epitaxial Growth of Refractory Silicides on Silicon

1984 ◽  
Vol 37 ◽  
Author(s):  
L. J. Chen ◽  
H. C. Cheng ◽  
W. T. Lin ◽  
L. J. Chou ◽  
M. S. Fung
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Ion Beam ◽  
Epitaxial Films ◽  
Electron Gun ◽  
Orientation Relationships ◽  
Metal Thin Films ◽  
Substrate Heating ◽  
Transmission Electron

AbstractEpitaxial refractory silicides were grown on silicon by solid phase epitaxy method. Transmission electron microscopy has been performed to study the microstructures of epitaxial layers and their orientation relationships with respect to substrate Si.Metal thin films, electron-gun deposited, or sputtered metal-silicon films were annealed in N2 ambient or in vacuum at 200°C-1100°C. Substrate heating, two step annealing and ion beam mixing were applied to induce the growth and improve the quality of epitaxial films. In this paper, formation and structures of epitaxial CrSi2, VSi2, ZrSi2, MoSi2 and WSi2 are presented. Preliminary results of the epitaxial growth of TiSi2, TaSi2 and NbSi2 are reported.

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