Growth of Large Crystalline Grain Al Thin Films on Amorphous Substrates

1985 ◽  
Vol 54 ◽  
Author(s):  
G. Sberveglieri ◽  
V. Canevari ◽  
N. Romeo ◽  
C. Spaggiari
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Melting Point ◽  
Substrate Temperature ◽  
Liquid Nitrogen Temperature ◽  
Maximum Temperature ◽  
Glass Substrates ◽  
Amorphous Substrates ◽  
Columnar Grains ◽  
Computer Controlled

ABSTRACT(111) uniquely oriented large crystalline grain Al thin films have been grown on amorphous substrates such as glass or fused quartz. Al has been evaporated by means of an electron beam in a vacuum of 10-7 mbar which was obtained by a conventional oil diffusion pump in conjunction with a titanium sublimation pump and a series of shields cooled at the liquid nitrogen temperature. By studying the variation of the grain size as a function of the growth temperature, a large increase in the grain size has been found at a substrate temperature 100°C below the Al melting point. This has been interpreted as due to the beginning of the metal surface melting and, as a consequence, to the quasi rheotaxial growth of the metal on itself. When the growth has been carried out at a substrate temperature close to the Al melting point (625°C), the grain size has been found out to increase exponentially as a function of the film thickness with a slope which slows down at a thickness of about 1 pm. (111) oriented columnar grains with a size of 50 – 100 pm, hitherto unreported, have been obtained on glass substrates kept at a maximum temperature of 655 °C. The surface morphology of the Al films has been studied by SEM microscopy while the film structural properties have been studied by an X-ray powder-diffracto-meter and by computer - controlled pole figure goniometer.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Control of porosity in fluoride thin films prepared by vapor deposition

2007 ◽  
Vol 22 (7) ◽  
pp. 2012-2016 ◽  
Author(s):  
Hakkwan Kim ◽  
Alexander H. King
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Lithium Fluoride ◽  
Quartz Crystal ◽  
Thermal Evaporation ◽  
Magnesium Fluoride ◽  
Crystal Thickness ◽  
Glass Substrates ◽  
Atomic Force

We have measured the porosity in thin films of lithium fluoride (LiF), magnesium fluoride (MgF2), barium fluoride (BaF2), and calcium fluoride (CaF2) as a function of the substrate temperature for films deposited by thermal evaporation onto glass substrates. The amount of porosity in the thin films was measured using an atomic force microscope and a quartz crystal thickness monitor. The porosity was very sensitive to the substrate temperature and decreased as the substrate temperature increased. Consistent behavior was observed among all of the materials in this study.

Texture Evolution of Lithium Fluoride Thin Films by Nucleation

2006 ◽  
Vol 979 ◽  
Author(s):  
Hakkwan Kim ◽  
Alexander H. King
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Substrate Temperature ◽  
Lithium Fluoride ◽  
Texture Evolution ◽  
Dark Field ◽  
Acceptable Error ◽  
Annealing Conditions ◽  
Surface Normal ◽  
Transmission Electron

AbstractWe have used a transmission electron microscope (TEM)-based method to extract grain size information for 〈111〉 surface normal grains in lithium fluoride (LiF) thin films, and applied this to analyze textures as a function of substrate temperature and annealing time. The size distributions of grains diffracting into the (111)+(200) and (220) rings were measured separately using dark field (DF) TEM images. From these data, we deduce the distribution of 〈111〉 surface normal grain sizes based on the assumption that only 3 principal textures (100), (110) and (111) exist in films. The (111) texture formation was also observed by x-ray diffraction (XRD). For all deposition and annealing conditions, the grain size data can be matched to lognormal distributions within an acceptable error, but at longer annealing times the distribution becomes bimodal. A novel feature of the LiF films is that the (111) texture component strengthens with annealing and substrate temperature, through the nucleation of new grains rather than the growth of existing ones.

Properties of CuInS2 Thin Films Fabricated by SEL Method

Solar Energy ◽  
2005 ◽  
Author(s):  
Gye-Choon Park ◽  
Woon-Jo Jeong ◽  
Hyeon-Hun Yang ◽  
Hae-Duck Jung ◽  
Jin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Constant ◽  
Energy Band ◽  
Optical Energy ◽  
Glass Substrates ◽  
Cuins2 Thin Films ◽  
Sulfur Atmosphere ◽  
P Type

CuInS2 thin films were fabricated by sulphurization of S/In/Cu Stacked elemental layers (SEL) on slide glass substrates by annealing in vacuum of 10−3 Torr at temperature of 50 °C ∼ 350 °C. Some S/In/Cu SEL were vacuum annealed under a sulfur atmosphere. The thin films thus annealed were analyzed by measuring structural, electrical and optical properties. When CuInS2 thin films were made under a sulfur atmosphere, lattice constant of a and grain size of the thin film were a little larger than those in only vacuum annealing. The largest lattice constant of a and grain size was 5.63 Å and 1.2 μm respectively. Also, when the thin films were made under a sulfur atmosphere, conduction types were all p-type with resistivities of around 10−1 Ωcm and optical energy band gaps of the films were a little larger than those in only vacuum and the largest optical energy band gap of CuInS2 thin film was 1.53 eV.

EFFECT OF SUBSTRATE TEMPERATURE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF NiTsPc THIN FILMS

2019 ◽  
Vol 27 (03) ◽  
pp. 1950124 ◽  
Author(s):  
MOHAMMED YARUB HANI ◽  
ADDNAN H. AL-AARAJIY ◽  
AHMED M. ABDUL-LETTIF
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Energy Gap ◽  
Chemical Spray Pyrolysis ◽  
Structural And Optical Properties ◽  
Absorption Bands ◽  
Tauc Plot ◽  
Substrate Temperatures

Nickel(II) phthalocyanine-tetrasulfonic acid tetrasodium salt (NiTsPc) thin films were deposited on glass substrates at different substrate temperatures ([Formula: see text]) by chemical spray pyrolysis (CSP) technique. The substrate temperature varied from 110∘C to 310∘C in 50∘C steps. The substrate surface temperature is the main parameter that determines the film morphology and properties of the thin films. The structural properties of the deposited NiTsPc thin films were investigated by X-ray diffraction (XRD) and from the obtained results, it was shown that depositing thin films using 210∘C as [Formula: see text] results in higher crystallinity. Atomic force microscope (AFM) was employed to obtain the surface topography and to calculate the roughness and grain size. The smoothest thin film surface was obtained when using at 160∘C, while the highest roughness was obtained at 310∘C. The optical properties were investigated by ultraviolet visible (UV-Vis) spectrophotometer and fluorescence spectrophotometer. From the absorption spectra recorded in the wavelength range 190–1100[Formula: see text]nm, two absorption bands were observed, which are known as Soret and Q-band. By observing the absorption spectrum, it can be concluded that the deposited thin films at 110∘C–310∘C have direct energy gap. From Tauc plot relation, the energy gap ([Formula: see text]) was calculated. The values of the energy gap were between 3.05 and 3.14[Formula: see text]eV. It was observed that different [Formula: see text] highly affects the structural and optical properties of the deposited thin films. The crystallinity, grain size, roughness and the optical properties were strongly affected by the different substrate temperatures.

Structural Evolution and Optical Properties of TiO2 Thin Films Prepared by DC-Reactive Sputtering Technique

2013 ◽  
Vol 699 ◽  
pp. 789-794 ◽  
Author(s):  
Laith Rabih ◽  
Sudjatmoko ◽  
Kuwat Triyana ◽  
Pekik Nurwantoro
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Band Gap ◽  
Structural Evolution ◽  
Film Structure ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Alternative Material ◽  
Dc Sputtering Technique ◽  
Economical Alternative

Titanium dioxide (TiO2 ) thin films have been deposited on glass substrates under various conditions by using a homemade reactive DC sputtering technique. The TiO2 has unique characteristics and economical alternative material for transparent conductivity oxide thin films compared with other materials. In this study, titanium (Ti) has been used as a target while argon (Ar) and oxygen (O22</subthin films has been measured by using a calibrated I-V meter. On the other hand, the transparency, microstructure and component of TiO2 thin films have been investigated respectively by using UV-VIS spectrophotometer, XRD and SEM (EDX). The thickness of TiO2 films, the grain size and the band gap have been also successfully estimated. As a result, the conductivity of films increased for Dt at 1 hour to 3.5 hours and decreased for Dt at 4 hours. It means that the optimum Dt was at about 3.5 hours. It may be related to the thickness (structures) of the films. In addition, the thickness and grain size increased by increasing Dt, while the band gap decreased when the film structure changed from non-crystalline structure to crystalizing structure.

PLASMA-ASSISTED VACUUM-COATING PROCESSES

1992 ◽  
Vol 06 (01) ◽  
pp. 1-24 ◽  
Author(s):  
GERHARD KIENEL
Keyword(s):  
Thin Films ◽  
Melting Point ◽  
Substrate Temperature ◽  
Important Variable ◽  
Coating Material ◽  
Melting Points ◽  
Coating Materials ◽  
Substrate Temperatures

For the properties of thin films produced in a vacuum the most important variable is the mobility of the particles in the course of condensation, which is dependent on the melting point of the coating material, the substrate temperature and the energy of the particles as they strike the substrate. Because of the generally higher particle energies in plasma-assisted processes, under comparable coating conditions lower substrate temperatures suffice than in the case of conventional evaporative coating. Especially with coating materials having higher melting points, compact films can be produced only if the particle energies are sufficiently high.

Thin Film Depositions of CdTe Semiconductors on Amorphous and Single Crystal Substrates and Comparisons of their Properties

2010 ◽  
Vol 638-642 ◽  
pp. 2909-2914 ◽  
Author(s):  
Yuichi Sato ◽  
Tatsushi Kodate ◽  
Manabu Arai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Photoluminescence Properties ◽  
Glass Substrates ◽  
Indium Doping ◽  
Sapphire Single Crystal ◽  
Cdte Thin Films ◽  
The Difference

Thin films of CdTe semiconductors were prepared on sapphire single crystal and quartz glass substrates by a vacuum evaporation method. Crystallinity and photoluminescence properties of the obtained CdTe thin films on the substrates were semi-quantitatively compared concerning the difference of the substrate materials. Dependences of the properties on the substrate temperature in the preparations and indium doping to the thin films were also investigated.

scholarly journals Impact of CNT Concentrations on Structural, Morphological and Optical Properties of ZnO: CNT Nano composite Films

2021 ◽  
Vol 2114 (1) ◽  
pp. 012020
Author(s):  
A.S. Abd - Alsada ◽  
M. F. A. Alias
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Energy Gap ◽  
Hexagonal Phase ◽  
Composite Films ◽  
Nano Composite ◽  
Glass Substrates ◽  
Crystallite Sizes ◽  
The Impact

Abstract In this study, zinc oxide: carbon nanotube (ZnO: CNT) nano composite films with varying CNT concentrations (0,3,5,10, and 15) wt percent were generated utilizing the pulsed laser deposition (PLD) procedure on clean glass substrates at room temperature. The impact of CNT concentration on the structural, morphological, and optical features of ZnO: CNT nano thin films as deposited was examined. X-ray diffraction was used to evaluate the structure of the generated ZnO: CNT thin films, while an atomic force microscope was used to explore the morphological features of the nano films (AFM) and field emission scan electron microscopy (FESEM). The optical properties of prepared thin films were characterized and studied using UV-VIS-NIR spectrophotometer. The structures of prepared ZnO: CNT with different concentration of CNT thin films were polycrystalline. ZnO: CNT nano thin films were synthesized in hexagonal phase and the dominate orientation is (101). The crystallite sizes are 32 and 26 nm for (101) and (100)) planes for ZnO and ZnO: 15% CNT nano films respectively. These crystallite size are decreased with increasing CNT (0, 3,5,10 and 15) wt. %. The lowest grain size can be shown for ZnO, while the largest grain size can be seen in ZnO: CNT nano thin with 15% concentration, whereas FESEM micrographs displayed a typically rough, pronounced microstructure, with surface protrusions. The energy gap (Eg) of ZnO: CNT nano thin film with various concentrations is computed. The result analysis shows that Eg decreased with increasing CNT weight concentration. This type of behaviors make the prepared films are good candidate for broad range of applications such as optoelectronic and display devices.

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