Structural Evolution and Optical Properties of TiO2 Thin Films Prepared by DC-Reactive Sputtering Technique

Titanium dioxide (TiO2 ) thin films have been deposited on glass substrates under various conditions by using a homemade reactive DC sputtering technique. The TiO2 has unique characteristics and economical alternative material for transparent conductivity oxide thin films compared with other materials. In this study, titanium (Ti) has been used as a target while argon (Ar) and oxygen (O22</subthin films has been measured by using a calibrated I-V meter. On the other hand, the transparency, microstructure and component of TiO2 thin films have been investigated respectively by using UV-VIS spectrophotometer, XRD and SEM (EDX). The thickness of TiO2 films, the grain size and the band gap have been also successfully estimated. As a result, the conductivity of films increased for Dt at 1 hour to 3.5 hours and decreased for Dt at 4 hours. It means that the optimum Dt was at about 3.5 hours. It may be related to the thickness (structures) of the films. In addition, the thickness and grain size increased by increasing Dt, while the band gap decreased when the film structure changed from non-crystalline structure to crystalizing structure.

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Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

Open Engineering ◽

10.2478/s13531-011-0041-6 ◽

2012 ◽

Vol 2 (1) ◽

Author(s):

Marek Nocuń ◽

Sławomir Kwaśny

Keyword(s):

Thin Films ◽

Band Gap ◽

Photoelectron Spectroscopy ◽

Sol Gel ◽

Dip Coating ◽

Band Gap Energy ◽

Tio2 Thin Films ◽

Glass Substrates ◽

Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

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Influence of deposition temperature on structural, morphological, and optical properties of ZnS thin films

Canadian Journal of Physics ◽

10.1139/cjp-2017-0730 ◽

2018 ◽

Vol 96 (7) ◽

pp. 826-830

Author(s):

Sinan Temel

Keyword(s):

Thin Films ◽

Grain Size ◽

Optical Properties ◽

Band Gap ◽

Deposition Temperature ◽

Band Gap Energy ◽

Complexing Agent ◽

Gap Energy ◽

Nanostructured Particles ◽

Glass Substrates

ZnS thin films were deposited onto glass substrates by chemical bath deposition (CBD) technique at different deposition temperatures (75, 80, 85, 90 °C) with non-toxic complexing agent tri-sodium citrate. Effects of deposition temperature on structural, morphological, and optical properties of thin films were investigated by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and ultraviolet–visible spectroscopy, respectively. The XRD results show that all produced ZnS thin films have cubic structure. The calculated grain size values are between 13 and 26 nm. It was observed that the grain size values increase and crystallization of films improve as the deposition temperature increases. The FESEM images reveal that film surfaces are formed by almost homogeneously dispersed nanostructured particles. Optical characterization results show that ZnS thin films have high transmittance of about 80% in the range of 400–800 nm with band gap energy values between 3.52 and 3.65 eV. As the deposition temperature increases, the band gap energy values increase. According to these results, it was observed that the structural, morphological, and optical properties of ZnS films vary depending on the deposition temperature.

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Deposition time dependent study of structural and optical properties of PbS thin films grown by CBD method

Recent Innovations in Chemical Engineering (Formerly Recent Patents on Chemical Engineering) ◽

10.2174/2405520413999200517123919 ◽

2020 ◽

Vol 13 ◽

Author(s):

Minakshi Chaudhary ◽

Yogesh Hase ◽

Ashwini Punde ◽

Pratibha Shinde ◽

Ashish Waghmare ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Band Gap ◽

Deposition Time ◽

Secondary Growth ◽

Cost Effective ◽

Xrd Analysis ◽

Structural Morphology ◽

Glass Substrates ◽

Cbd Method

: Thin films of PbS were prepared onto glass substrates by using a simple and cost effective CBD method. Influence of deposition time on structural, morphology and optical properties have been investigated systematically. The XRD analysis revealed that PbS films are polycrystalline with preferred orientation in (200) direction. Enhancement in crystallinity and PbS crystallite size has been observed with increase in deposition time. Formation of single phase PbS thin films has been further confirmed by Raman spectroscopy. The surface morphology analysis revealed the formation of prismatic and pebble-like PbS particles and with increase in deposition time these PbS particles are separated from each other without secondary growth. The data obtained from the EDX spectra shows the formation of high-quality but slightly sulfur rich PbS thin films over the entire range of deposition time studied. All films show increase in absorption with increase in deposition time and a strong absorption in the visible and sub-band gap regime of NIR range of the spectrum with red shift in band edge. The optical band gap shows decreasing trend, as deposition time increases but it is higher than the band gap of bulk PbS.

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Optical Properties and Zinc Nitride Thin Films Prepared Using Magnetron Reactive Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.940.11 ◽

2014 ◽

Vol 940 ◽

pp. 11-15

Author(s):

Jun Qin Feng ◽

Jun Fang Chen

Keyword(s):

Thin Films ◽

Band Gap ◽

Near Infrared ◽

Fluorescence Emission ◽

Emission Spectra ◽

Sem Images ◽

Fluorescence Emission Spectra ◽

Glass Substrates ◽

Zinc Nitride ◽

Direct Band

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.

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Fabrication and Photoelectrochemical Characterization of Fe, Co, Ni and Cu-Doped TiO2 Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.764.266 ◽

2013 ◽

Vol 764 ◽

pp. 266-283 ◽

Cited By ~ 8

Author(s):

Ibram Ganesh ◽

Rekha Dom ◽

P.H. Borse ◽

Ibram Annapoorna ◽

G. Padmanabham ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Metal Ions ◽

Band Gap ◽

Metal Ion ◽

Band Gap Energy ◽

Chemical Compositions ◽

Gap Energy ◽

Glass Substrates ◽

Photoelectrochemical Characterization

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.

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Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

MRS Proceedings ◽

10.1557/proc-730-v5.14 ◽

2002 ◽

Vol 730 ◽

Cited By ~ 1

Author(s):

A. Nuñez Rodriguez ◽

M.T.S. Nair ◽

P.K. Nair

Keyword(s):

Thin Film ◽

Thin Films ◽

Electrical Conductivity ◽

Silver Nitrate ◽

Band Gap ◽

Chemical Bath Deposition ◽

Optical Band Gap ◽

Sodium Thiosulfate ◽

Xrd Pattern ◽

Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

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The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽

10.3390/coatings9020136 ◽

2019 ◽

Vol 9 (2) ◽

pp. 136

Author(s):

Ping Tang ◽

Weimin Wang ◽

Bing Li ◽

Lianghuan Feng ◽

Guanggen Zeng

Keyword(s):

Thin Film ◽

Thin Films ◽

Pulsed Laser Deposition ◽

Band Gap ◽

Photovoltaic Effect ◽

Pulsed Laser ◽

Laser Deposition ◽

Sem Images ◽

Glass Substrates ◽

Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

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The role of Al and Co co-doping on the band gap tuning of TiO2 thin films for applications in photovoltaic and optoelectronic devices

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2020.105419 ◽

2021 ◽

Vol 121 ◽

pp. 105419 ◽

Cited By ~ 1

Author(s):

M.N. Islam ◽

J. Podder

Keyword(s):

Thin Films ◽

Band Gap ◽

Optoelectronic Devices ◽

Tio2 Thin Films ◽

Co Doping ◽

Band Gap Tuning

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Studies on the Optical Properties and Surface Morphology of Nickel Phthalocyanine Thin Films

E-Journal of Chemistry ◽

10.1155/2007/643834 ◽

2007 ◽

Vol 4 (2) ◽

pp. 255-264 ◽

Cited By ~ 5

Author(s):

Benny Joseph ◽

C. S. Menon

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Band Gap ◽

Electron Micrographs ◽

Optical Band Gap ◽

Scanning Electron Micrographs ◽

Nickel Phthalocyanine ◽

Glass Substrates ◽

Substrate Temperatures ◽

Scanning Electron

Thin films of Nickel Phthalocyanine (NiPc) are fabricated at a base pressure of 10-5m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. Present studies reveal that the optical band gap energies of NiPc thin films are highly dependent on the substrate temperatures. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM), show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM) intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are fiber like at high substrate temperatures. The optical band gap increases with increase in substrate temperature and is then reduced with fiber-like grains at 408K. The band gap increases again at 458K with full of fiber like grains. Trap energy levels are also observed for these films.

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