Comparison of Copper CVD Using Cu(FOD)2 and Cu(HFAC)2 Reduction

1999 ◽  
Vol 564 ◽  
Author(s):  
J. S. Boey ◽  
G. L. Griffin ◽  
A. W. Maverick ◽  
H. Fan
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reaction Order ◽  
Cluster Formation ◽  
Chemical Vapor ◽  
Significant Cluster ◽  
Film Properties ◽  
Film Nucleation

AbstractWe have measured the growth rate and film properties for the chemical vapor deposition of copper thin films using H2 reduction of Cu(fod)2 [H(fod) = 6,6,7,7,8,8,8-heptafluoro-2,2- dimethyl-3,5-octanedione]. The results are directly compared to deposition using Cu(hfac)2 [H(hfac) = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione]. Higher growth rates are obtained using Cu(fod)2, in part because of differences in reaction order between the two compounds. However, both compounds exhibit significant cluster formation during film nucleation, which leads to residual porosity and film resistivities above 2 µΩ-cm.

Deposition of YSZ Thin Films by Liquid Fuel Combustion Chemical Vapor Deposition

2002 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Qiuming Wei ◽  
Jim Lua ◽  
Sergey Yamolenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Film Growth ◽  
Early Stage ◽  
Chemical Vapor ◽  
Nucleation Density

Thin film of YSZ electrolyte is highly desired to reduce the electrical resistance in SOFCs. YSZ thin Films have been successfully produced using liquid fuel combustion chemical vapor deposition (CCVD) technique. Nucleation of the YSZ particles were investigated based on two processing parameters, i.e., substrate temperature and total-metal-concentration in the liquid fuel. An optimum substrate temperature was found for highest the nucleation density. The nucleation density was increased with the total-metal-concentration. Microstructure evolution of the YSZ particles in the early stage in film growth was also studied. It was found that the particle growth rate was linear with processing time, and the particle orientation was varying with the time in the early stage of the film processing. To enhance the film growth rate, the effect of thermophoresis was studied. By increase the temperature gradient towards substrate, the effect of thermophoresis was enhanced and the film growth is also increased.

Metalorganic chemical vapor deposition of Er2O3 thin films: Correlation between growth process and film properties

2009 ◽  
Vol 517 (8) ◽  
pp. 2606-2610 ◽  
Author(s):  
Maria M. Giangregorio ◽  
Maria Losurdo ◽  
Alberto Sacchetti ◽  
Pio Capezzuto ◽  
Giovanni Bruno
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Process ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Film Properties ◽  
Metalorganic Chemical

(ClAlNH)n cluster formation in the gas phase for the chemical vapor deposition of AlN thin films

2001 ◽  
Vol 542 (1-3) ◽  
pp. 239-246 ◽  
Author(s):  
Xiao-Hong Xu ◽  
Hai-Shun Wu ◽  
Fu-Qiang Zhang ◽  
Cong-Jie Zhang ◽  
Zhi-Hao Jin
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Cluster Formation ◽  
Chemical Vapor

Plasma Activated Chemical Vapor Deposition of Polythiophene Thin Films

1992 ◽  
Vol 247 ◽  
Author(s):  
J. D. Targove ◽  
P. D. Haaland ◽  
C. A. Kutsche
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reactive Ion Etching ◽  
Chemical Vapor ◽  
Film Properties ◽  
Ion Etching ◽  
Plasma Technique ◽  
Argon Stream

ABSTRACTPolythiophene thin films have been deposited by a novel plasma technique which avoids the disadvantages of conventional plasma-based processes. In particular, the thiophene precursor is injected into an activated argon stream rather than into a plasma. The films produced are dense and uniform, with surface roughness of less than 1 nm. Other film properties are comparable to films deposited by more conventional methods. These films have been processed by reactive ion etching to produce micron-scale features.

Lou Temperature Growth of Superconducting Ybaacu,07‐X Thin Films by Metalorganic Chemical Vapor Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
Keiichi Kanehori ◽  
Nobuyuki Sugii ◽  
Katsuki Miyauchi
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Critical Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Film Properties ◽  
Temperature Growth ◽  
Metalorganic Chemical

AbstractThin YBa2Cu307‐xfilms were grown by thermal and plasma enhanced MOCVD, and the effects of growth teiperature on the film properties were studied. The crystal Iinity of the fills deteriorated with growth teiperature, so superconductity decreased with growth teiperature. Thin fills grown by therial MOCVD at 600°C, 650°C, 700°C and 750°C had zero‐resistivity at 10K, 71K, 83K and 84K, respectively. The growth teiperature for superconducting fids is decreased by plasia enhancement. Thin films grown by plasma enhanced MOCVD at 515°C and 580 °C had zero‐resistivity at 60K and 85K. The critical current density of fills grown by plasia enhanced MOCVD at 580°C was 105A/cm2 at 77K.

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