Abrasive Effects in Oxide Chemical Mechanical Polishing

1999 ◽  
Vol 566 ◽  
Author(s):  
Uday Mahajan ◽  
Marc Bielmann ◽  
Rajiv K. Singh
Keyword(s):  
Particle Size ◽  
Surface Morphology ◽  
Surface Area ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Sol Gel ◽  
Mechanical Polishing ◽  
Size Distributions ◽  
Abrasive Properties

In this study, we have characterized the effects of abrasive properties, primarily particle size, on the Chemical Mechanical Polishing (CMP) of oxide films. Sol-gel silica particles with very narrow size distributions were used for preparing the polishing slurries. The results indicate that as particle size increases, there is a transition in the mechanism of material removal from a surface area based mechanism to an indentation-based mechanism. In addition, the surface morphology of the polished samples was characterized, with the results showing that particles larger than 0.5 μm are detrimental to the quality of the SiO2 surface.

Analysis of Chemical Action of Oxidants in Chemical Mechanical Polishing of SiC Crystal Substrate

2014 ◽  
Vol 1027 ◽  
pp. 213-216
Author(s):  
Su Fang Fu ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Jian Xiu Su
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Key Factors ◽  
Chemical Action ◽  
Crystal Substrate ◽  
The Stability ◽  
Polishing Efficiency

Chemical mechanical polishing (CMP) had been considered as the most practical and effective method of achieving an ultra-smooth and non-damage surface in manufacturing SiC crystal substrate. CMP slurry was one of the key factors of CMP technology. In this paper, through investigating the changes of several core factors to evaluate the performance of CMP, such as the material removal rate (MRR), surface roughness Ra, 3D surface profiler, etc., the influence of various slurry and its content on the polishing efficiency and surface finish quality had been studied. The research results showed that different oxidant had different chemical action mechanism, also affecting the stability of CMP slurry and surface quality of specimen; adding suitable an oxidant to slurry could effectively improve the CMP performance.

Study on 6H-SiC Crystal Substrate (0001) C Surface in FA-CMP Based on Diamond Particle

2015 ◽  
Vol 727-728 ◽  
pp. 244-247
Author(s):  
Zhu Qing Zhang ◽  
Kang Lin Xing
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Diamond Particle ◽  
Mechanical Polishing ◽  
Crystal Substrate ◽  
Fixed Abrasive ◽  
Free Abrasive

Through experimental study on the role of the free abrasive in chemical mechanical polishing, in this paper, four different types of abrasive which were chosen were used for the research of material removal rate(MRR) and surface quality of SiC single crystal . Finally ,Diamond abrasive which is considered was the most suitable for chemical mechanical polishing(CMP) abrasive of SiC Crystal Substrate. With diamond Particle polish pad polishing, it is draw a comparison result on the influence of the free abrasive and consolidation abrasive for the material removal rate and surface quality of 6H-SiC. The results showed that: the MRR is 140nm / min, the material removal rate if fixed abrasive chemical mechanical polishing(FA-CMP) more than three times that of traditional CMP, fixed abrasive chemical mechanical polishing pad, are involved in a large proportion of micro abrasive cutting, can greatly improve the material removal efficiency. And results from the test procedure, the FA-CMP surface has scratches after more technical problems for the polishing pad, the surface damage is relatively free of abrasive chemical mechanical polishing is more serious.

Effect of Particle Size During Tungsten Chemical Mechanical Polishing

1999 ◽  
Vol 566 ◽  
Author(s):  
Marc Bielmann ◽  
Uday Mahajan ◽  
Rajiv K. Singh
Keyword(s):  
Particle Size ◽  
Surface Area ◽  
Contact Surface ◽  
Chemical Mechanical Polishing ◽  
Alumina Particle ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Polished Surface ◽  
Contact Surface Area ◽  
Effect Of Particle Size

Abrasive particle size plays a critical role in controlling the polishing rate and the surface roughness during chemical mechanical polishing (CMP) of interconnect materials during semiconductor processing. Earlier reports on the effect of particle size on polishing of silica show contradictory conclusions. We have conducted controlled measurements to determine the effect of alumina particle size during polishing of tungsten. Alumina particles of similar phase and shape with size varying from 0.1 μm to 10 μm diameter have been used in these experiments. The polishing experiments showed that the local roughness of the polished tungsten surfaces was insensitive to alumina particle size. The tungsten removal rate was found to increase with decreasing particle size and increased solids loading. These results suggest that the removal rate mechanism is not a scratching type process, but may be related to the contact surface area between particles and polished surface controlling the reaction rate. The concept developed in our work showing that the removal rate is controlled by the contact surface area between particles and polished surface is in agreement with the different explanations for tungsten removal.

Influence of Polishing Parameters on Chemical Mechanical Polishing Processes of LiTaO3 Wafer

2006 ◽  
Vol 315-316 ◽  
pp. 561-565
Author(s):  
Hui Yuan ◽  
Xin Wei ◽  
H.W. Du ◽  
W. Hu ◽  
Wei Xiong
Keyword(s):  
Surface Roughness ◽  
Chemical Mechanical Polishing ◽  
High Frequency ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Suitable Material ◽  
Linear Optical Properties ◽  
Band Saw

Lithium tantalite (LiTaO3) possesses a combination of unique electro-optical, acoustic, piezoelectric, pyroelectric and non-linear optical properties, making it a suitable material for applications in high frequency, broad width-band SAW and BAW components, filters in television receivers, etc. The surface quality of LiTaO3 wafers decides the performances of the devices. In this paper, the technique of chemical mechanical polishing (CMP) was used to polish LiTaO3 wafers. The influences of the polishing parameters on the CMP processes of LiTaO3 wafers were analyzed in detail based on the measurement of the material removal rate, surface roughness and topograph of the polished wafers in different polishing conditions.

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

scholarly journals Synthesis of Spherical Silica by Sol-Gel Method and Its Application as Catalyst Support

2011 ◽  
Vol 10 (2) ◽  
pp. 25
Author(s):  
Anirut Leksomboon ◽  
Bunjerd Jongsomjit
Keyword(s):  
Particle Size ◽  
Ethylene Glycol ◽  
Specific Surface ◽  
Surface Area ◽  
Specific Surface Area ◽  
Sol Gel ◽  
Weight Ratio ◽  
Gel Method ◽  
Sol Gel Method ◽  
Spherical Silica

In this present study, the spherical silica support was synthesized from tetraethyloxysilane (TEOS), water, sodium hydroxide, ethylene glycol and n-dodecyltrimethyl ammonium bromide (C12TMABr). The particle size was controlled by variation of the ethylene glycol co-solvent weight ratio of a sol-gel method preparation in the range of 0.10 to 0.50. In addition, the particle size apparently increases with high weight ratio of co-solvent, but the particle size distribution was broader. The standard deviation of particle diameter is large when the co-solvent weight ratio is more than 0.35 and less than 0.15. However, the specific surface area was similar for all weight ratios ranging from 1000 to 1300 m2/g. The synthesized silica was spherical and has high specific surface area. The cobalt was impregnated onto the obtained silica to produce the cobalt catalyst used for CO2 hydrogenation.</

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