scholarly journals Visible emission from Er-doped SnO2 thin films deposited by sol-gel

Cerâmica ◽  
2007 ◽  
Vol 53 (326) ◽  
pp. 187-191 ◽  
Author(s):  
L. P. Ravaro ◽  
E. A. Morais ◽  
L. V. A. Scalvi ◽  
M. Siu Li
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Tin Dioxide ◽  
Sol Gel ◽  
Precursor Solution ◽  
Dip Coating ◽  
Sno2 Thin Film ◽  
Rare Earth Ion ◽  
Electron Hole ◽  
Er Doped

Emission from Er-doped SnO2 thin film deposited via sol-gel by the dip coating technique is obtained in the range 500-700 nm with peak at 530 nm (green). Electron-hole generation in the tin dioxide matrix is used to promote the rare-earth ion excitation. Evaluation of crystallite dimensions through X-ray diffraction results leads to nanoscopic size, what could play a relevant role in the emission spectra. The electron-hole mechanism is also responsible for the excitation of the transition in the 1540 nm range in powders obtained from the same precursor solution of films. The thin film matrix presents a very useful shape for technological application, since it allows integration in optical devices and the application of electric fields to operate electroluminescent devices.

Numerical simulation of the liquid phase in SnO2 thin film deposition by sol-gel-dip-coating

2010 ◽  
Vol 55 (3) ◽  
pp. 385-393 ◽  
Author(s):  
Dayene M. Carvalho ◽  
Jorge L. B. Maciel ◽  
Leandro P. Ravaro ◽  
Rogério E. Garcia ◽  
Valdemir G. Ferreira ◽  
...  
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Liquid Phase ◽  
Sol Gel ◽  
Thin Film Deposition ◽  
Dip Coating ◽  
Film Deposition ◽  
Sno2 Thin Film

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Synthesis of WO3 Electrochromic Sensor by Sol-Gel Method and Characterization of Its Electrochemical and Optical Properties

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Xrd Pattern ◽  
Starting Solution ◽  
Oxide Crystal ◽  
Heat Treated ◽  
Coating Method ◽  
Dip Coating Method

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.

scholarly journals Synthesis and Characterization of TiO2/SiO2 Monoliths as Photocatalysts on Methanol Oxidation

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
Rigoberto Regalado-Raya ◽  
Rubí Romero-Romero ◽  
Osmín Avilés-García ◽  
Jaime Espino-Valencia
Keyword(s):  
Thin Film ◽  
Methanol Oxidation ◽  
Immersion Time ◽  
Film Formation ◽  
Anatase Phase ◽  
Sol Gel ◽  
Packed Bed ◽  
Dip Coating ◽  
Packed Bed Reactor ◽  
Titanium Butoxide

Photocatalytic materials based on silica-titania (SiO2-TiO2) were synthesized by sol-gel and dip-coating method. TEOS and titanium butoxide were used as precursors of the silica-titania, respectively. A thin film with anatase phase was obtained on the surface of the support. The effect of variables as dispersion mechanism, immersion time, and number of treatment cycles were studied. The materials were characterized using X-ray diffraction, scanning electron microscopy, energy dispersion scanning, and N2 adsorption-desorption. The highest crystallinity of TiO2 on silica, high specific surface area in TiO2-SiO2 materials, and thin film formation were obtained by using a stirring plate and minimum immersion time. The so synthesized catalyst allowed the production of formaldehyde from the photocatalyzed methanol oxidation in a packed-bed reactor.

Solar-Water-Splitting BiVO4 Thin-Film Photoanodes Prepared By Using a Sol-Gel Dip-Coating Technique

ChemPhotoChem ◽  
2017 ◽  
Vol 1 (6) ◽  
pp. 273-280 ◽  
Author(s):  
Samantha Hilliard ◽  
Dennis Friedrich ◽  
Stéphane Kressman ◽  
Henri Strub ◽  
Vincent Artero ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Splitting ◽  
Sol Gel ◽  
Dip Coating ◽  
Solar Water ◽  
Coating Technique ◽  
Solar Water Splitting ◽  
Dip Coating Technique

Effect of ZnO on a Superhydrophilic Self-Cleaning Properties of TiO2/SiO2 Thin Film on Glass Slide Substrate

2015 ◽  
Vol 1131 ◽  
pp. 237-241 ◽  
Author(s):  
Akkarat Wongkaew ◽  
Chanida Soontornkallapaki ◽  
Naritsara Amhae ◽  
Wichet Lamai
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Visible Light ◽  
Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Coating Method ◽  
Dip Coating Method

This work aims to study the effect of ZnO containing in TiO2/SiO2 film on the superhydrophilic property after exposed to different types of light. The metal solutions were prepared by sol-gel technique and the film was deposited on glass slides by dip coating method. The parameter studied was the amount of ZnO in the TiO2/SiO2 film. The contents of ZnO were 5-20% weight (increased by 5%). The amount of TiO2 was constant at 30% weight. The obtained films were analyzed for their roughness. The results indicated that film roughness changed according to the ZnO contents. With 5%ZnO in the thin film, the roughness was 0.726 nm while 20%ZnO obtained the roughness of 2.128 nm. UV-Vis spectrophotometer was used for measuring of transmittance of films. At wavelength of 550 nm, the transmittances of each film were greater than 90%. Band gap energy of each film was calculated from the transmittance data. It was found that the average band gap energy of the films was 2.47 eV. Then, the films contained various amount of ZnO were grouped into 2 sets. The first set was exposed to visible light while the other set was exposed to UV. The duration of exposure was 5 hr. Both sets of films after exposed to any light were kept in a black box controlled relative humidity of 85%. Each film was measured contact angle every day. It was found that the 30%TiO2/5%Zn/SiO2 film exposed to visible light showed the best superhydrophilic property. The contact angle was about 0-5° within 3 days. This may due to the reduction of band gap energy in the presence of ZnO in TiO2/SiO2 films to 2.41 eV and the roughness of the film.

scholarly journals Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 254 ◽  
Author(s):  
Changmin Lee ◽  
Won-Yong Lee ◽  
Hyunjae Lee ◽  
Seunghyun Ha ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Electrical Transport ◽  
Thin Film Transistors ◽  
Vacancy Concentration ◽  
Operation Mode ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Oxygen Vacancy Concentration ◽  
Electrical Transport Properties

Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films was investigated via GIXRD, SPM, and XPS; the corresponding electrical transport properties of the film were also evaluated. The dopant, Y, can successfully control the free carrier concentration by suppressing the formation of oxygen vacancy inside SnO2 semiconductors due to its lower electronegativity and SEP. With an increase of Ywt%, it was observed that the crystallinity and oxygen vacancy concentration decreased, and the operation mode of SnO2 thin film transistor changed from accumulation (normally on) to enhancement mode (normally off) with a positive Vth shift.

Zinc Oxide Thin Film Synthesized by Sol-Gel Method

2020 ◽  
Vol 307 ◽  
pp. 51-57
Author(s):  
Amna Afiqah Nasution Hakim ◽  
Affa Rozana Abdul Rashid ◽  
N. Arsad ◽  
Aisyah Hanim Surani
Keyword(s):  
Thin Film ◽  
Uv Light ◽  
Zinc Acetate Dihydrate ◽  
Sol Gel ◽  
Dip Coating ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Crystallite Sizes ◽  
Surface Morphologies

ZnO thin films have been prepared by the dip coating sol gel method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine (MEA) were used as precursor, solvent and stabilizer respectively. The synthesized sample was coated on glass substrate as the molarity of the solution was kept constant at 0.1 M. The structural properties and surface morphologies of ZnO thin film were characterized by XRD and FESEM. The optical properties such as transmittance, absorbance, reflectance and refractive index were studied by using UV-Vis. The functional group of the synthesized sample were verified by using FTIR. Average crystallite sizes of the samples were calculated by using Debye-Scherrer's formula. Next, ZnO is coated on POF in order to examine the reaction towards UV light.

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