Fabrication of High Jc YBa2Cu3O7-δ Coated Conductors Using Sol-Gel Buffer Layers On Nickel and Nickel Alloy Substrates

2001 ◽  
Vol 689 ◽  
Author(s):  
S. Sathyamurthy ◽  
M. Paranthaman ◽  
B. W. Kang ◽  
H. Y. Zhai ◽  
T. Aytug ◽  
...  

Sol-gel processing of La2Zr2O7 (LZO) buffer layers on biaxially textured Ni-3 at.% W alloy substrates using a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. The effect of increasing the annealing speed on the texture, microstructure and the carbon content retained in the film were studied. On top of the LZO films, epitaxial layers of Yttria Stabilized Zirconia (YSZ) and Ceria (CeO2) were deposited using rf sputtering, and YBa2Cu3Ox (YBCO) films were then deposited using Pulsed Laser Deposition (PLD). A critical current density (Jc) of 1.9 MA/cm2 at 77K and self-field and 0.34 MA/cm2 at 77K and 0.5T have been obtained on these films. These values are comparable to those obtained on YBCO films deposited on all-vacuum deposited buffer layers, and are the highest ever obtained using solution seed layers. The use of all-solution buffers for coated conductor processing has also been explored. A critical current density of 1.1 MA/cm2 at 77 K and self-field was obtained on YBCO films grown be PLD on LZO buffered nickel substrates.

2002 ◽  
Vol 17 (6) ◽  
pp. 1543-1549 ◽  
Author(s):  
S. Sathyamurthy ◽  
M. Paranthaman ◽  
T. Aytug ◽  
B. W. Kang ◽  
P. M. Martin ◽  
...  

Sol-gel processing of La2Zr2O7 (LZO) buffer layers on biaxially textured Ni–1.7% Fe–3% W alloy substrates using a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. The effects of increasing the annealing speed on the texture, microstructure, and carbon content retained in the film were studied. On top of the LZO films, epitaxial layers of yttria-stabilized zirconia and Ceria (CeO2) were deposited using rf sputtering, and YBa2Cu3Ox (YBCO) films were then deposited using pulsed laser deposition. Critical current densities (Jc) of 1.9 MA/cm2 at 77 K and self-field and 0.34 MA/cm2at 77 K and 0.5 T have been obtained on these films. These values are comparable to those obtained on YBCO films deposited on all-vacuum deposited buffer layers and the highest ever obtained using solution seed layers.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jie Xiong ◽  
Yudong Xia ◽  
Fei Zhang ◽  
Yan Xue ◽  
Kai Hu ◽  
...  

1 μm-thickYBa2Cu3O7-δ(YBCO) films were grown on the Y2O3/yttria stabilized zirconia (YSZ)/CeO2buffer layers with different surface morphologies using direct-current sputtering. The critical current density (Jc) value of YBCO was 1.1 MA/cm2when the root mean square surface roughness (Rrms) of the buffer layer was 2.5 nm. As theRrmsof the buffer layer increased to 15 nm, theJcdecreased to 0.3 MA/cm2. X-ray diffraction and scanning electron microscopy showed the strong relevance of the evolution of the structure and surface morphologies of YBCO films with the buffer layer of differentRrms. A model was proposed to explain the influence of surface morphology on the superconducting properties of YBCO films.


2002 ◽  
Vol 17 (7) ◽  
pp. 1750-1757 ◽  
Author(s):  
B. W. Kang ◽  
A. Goyal ◽  
D. F. Lee ◽  
J. E. Mathis ◽  
E. D. Specht ◽  
...  

We investigated the dependence of critical current density (Jc) on thickness of Yba2Cu3O7−δ (YBCO) films grown by pulsed laser deposition on (100) SrTiO3 (STO) and on rolling-assisted biaxially textured substrates (RABiTS). The thickness of YBCO films varied from 0.19 to 3 μm. The highest Jcs of 5.3 and 2.6 MA/cm2 at 77 K, self-field were obtained for 0.19-μm YBCO films on STO and RABiTS, respectively. Jc was found to decrease exponentially with YBCO thickness on both substrates. However, the results suggest different mechanisms are responsible for the Jc reduction in the two cases. On STO, growth of a-axis grains within c-axis films and broadening of the in-plane texture were observed in thick films. On RABiTS, degradation in cube texture as well as development of a porous surface morphology were found to correlate with film thickness.


2003 ◽  
Vol 18 (5) ◽  
pp. 1109-1122 ◽  
Author(s):  
K. J. Leonard ◽  
A. Goyal ◽  
D. M. Kroeger ◽  
J. W. Jones ◽  
S. Kang ◽  
...  

The change in microstructure associated with the decrease in critical current density (Jc) of Yba2Cu3O7−δ (YBCO) films with increasing thickness was examined. Samples of pulse laser deposited YBCO films varying in thickness from 0.19 to 3.0 μm on rolling-assisted biaxially textured substrates with an architecture of CeO2/YSZ/CeO2/Ni were prepared by tripod polishing for cross-sectional electron microscopy. More randomly oriented grains in the upper portion of the YBCO film surface were observed with increasing film thickness, resulting in less cube texture. In addition, increases in mismatch across the boundaries of the c-axis grains with increasing time during deposition, along with the development of BaCeO3 and Y2BaCuO5 phases at the YBCO/CeO2 interface, contributed to the degradation of film properties. Surface outgrowths of the YBCO film were examined as well as the defect structures and second-phase formations within the films.


2005 ◽  
Vol 20 (8) ◽  
pp. 2012-2020 ◽  
Author(s):  
D.M. Feldmann ◽  
D.C. Larbalestier ◽  
T. Holesinger ◽  
R. Feenstra ◽  
A.A. Gapud ◽  
...  

It has been generally accepted that YBa2Cu3O7−x (YBCO) films deposited on deformation textured polycrystalline metal tapes result in YBCO grain boundary (GB) networks that essentially replicate the GBs of the underlying substrate. Here we report that for thicker YBCO films produced by a BaF2 ex situ process, this is not true. Using electron backscatter diffraction combined with ion milling, we have been able to map the evolution of the YBCO grain structure and compare it to the underlying template in several coated conductors. For thin (≤0.5 μm) YBCO films deposited on rolling-assisted biaxially textured substrates (RABiTS), the YBCO GBs nearly directly overlap the substrate GBs. For 0.7–1.4 μm YBCO films, the GBs were found to meander along the substrate GBs and along the sample normal, with displacements several times the film thickness. In very thick films (2.5–2.9 μm), the YBCO grains can completely overgrow substrate grains and GBs, resulting in a substantial disconnection of the YBCO and substrate GB networks. Similar behavior is found for BaF2 ex situ YBCO films on ion-beam-assisted deposition-type templates. The ability of the YBCO to overgrow substrate grains and GBs is believed to be due to liquid-phase mediated laminar grain growth. Although the behavior of the YBCO GB networks changes with YBCO film thickness, the samples maintained high critical current density (Jc) values of >2 MA/cm2 for films up to 1.4 μm thick, and up to0.9 MA/cm2 for 2.5–2.9-μm-thick films.


2004 ◽  
Vol 19 (7) ◽  
pp. 2117-2123 ◽  
Author(s):  
S. Sathyamurthy ◽  
M. Paranthaman ◽  
H.Y. Zhai ◽  
S. Kang ◽  
T. Aytug ◽  
...  

Epitaxial lanthanum zirconate (LZO) buffer layers have been grown by sol-gel processing on Ni–W substrates. We report on the application of these oxide films as seed and barrier layers in coated conductor fabrication as potentially simpler, lower cost coated-conductor architecture. The LZO films, about 80–100-nm thick, were found to have dense, crack-free surfaces with high surface crystallinity. Using 0.2-μm YBCO deposited by pulsed laser deposition, a critical current density of 2 MA/cm2 has been demonstrated on the LZO films (YBCO/LZO/Ni–W). Using 0.8-μm YBCO deposited using metal organic decomposition, a critical current density of 1.7 MA/cm2 and a critical current of 135 A/cm have been demonstrated on the LZO barrier layer with a sputtered CeO2 cap layer (YBCO/CeO2/LZO/Ni–W). These results offer promise to replace several of the vacuum-deposited layers in the typical coated conductor architecture (YBCO/CeO2/YSZ/Y2O3/Ni/Ni-W).


2011 ◽  
Vol 471 (21-22) ◽  
pp. 1036-1040 ◽  
Author(s):  
K. Higashikawa ◽  
M. Inoue ◽  
T. Kawaguchi ◽  
K. Shiohara ◽  
K. Imamura ◽  
...  

2005 ◽  
Vol 426-431 ◽  
pp. 1108-1112 ◽  
Author(s):  
P. Mele ◽  
K. Matsumoto ◽  
T. Horide ◽  
O. Miura ◽  
A. Ichinose ◽  
...  

2011 ◽  
Vol 24 (10) ◽  
pp. 105020 ◽  
Author(s):  
I A Golovchanskiy ◽  
A V Pan ◽  
O V Shcherbakova ◽  
S A Fedoseev ◽  
S X Dou

2013 ◽  
Vol 103 (12) ◽  
pp. 122601 ◽  
Author(s):  
Y. Jia ◽  
M. LeRoux ◽  
D. J. Miller ◽  
J. G. Wen ◽  
W. K. Kwok ◽  
...  

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