Influence of the Deposition Parameters on the Electrical and Mechanical Properties of Physically Vapor-Deposited Iridium and Rhodium Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
Ilan Golecki ◽  
Margaret Eagan
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Process Window ◽  
Process Conditions ◽  
Silicon Substrates ◽  
Deposition Parameters ◽  
Thin Chromium

AbstractIridium and rhodium thin films have been formed by e-gun physical vapor deposition on thin-chromium-coated, thermally-oxidized, silicon substrates. Cr, Ir and Rh deposition rates and substrate temperature during deposition were measured and controlled. The effects of the latter deposition parameters on the sheet resistance and stress of the Ir and Rh films are presented and it is demonstrated that both stress and sheet resistance can be desirably minimized by proper choice of the process conditions. The resistivity of these Rh and Ir thin films has been measured at room temperature. Rh can be formed in a wider process window than Ir. Rh films with Rsh = 0.1 Ω/square have been obtained at a thickness of 0.6 ¼m.

A Detailed Study of the Synthesis of Bismuth Thin Films by PVD-Methods and their Structural Characterization

2012 ◽  
Vol 1477 ◽  
Author(s):  
Enrique Camps ◽  
Sandra E. Rodil ◽  
J. Antonio Salas ◽  
Horacio V. Estrada
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Thermal Evaporation ◽  
Synthesis Method ◽  
Crystallographic Structure ◽  
Silicon Substrates ◽  
Flexible Films ◽  
Deposition Parameters ◽  
Sputtering Power ◽  
Complete Study

ABSTRACTA comprehensive and rather complete study for the synthesis of Bismuth thin-films using physical vapor deposition (PVD) techniques aimed at identifying key features of their crystallographic structure and morphology/topography, as a function of the synthesis method is presented. These films were deposited on oxidized and non-oxidized polished silicon substrates, glass-plates and polyimide flexible films, by thermal evaporation (resistive boat and e-beam) DC- and RF-magnetron assisted sputtering, and pulsed laser (ablation) deposition (PLD). The synthesis was performed controlling the main deposition parameters of these methods.XRD-spectra conclusively indicate that the films can be preferentially oriented along the [003] or [012] Bi-structure’s directions, depending on the source-to- substrate (STS)-distance, sputtering power, substrate’s temperature and PLD ion’s kinetic energy. It is also concluded that a relatively short STS-distance results in a rather polycrystalline structure, near independent to the used sputtering power.

Microstructure and Properties of CoSi2 Thin Films on (100) Silicon by Laser Physical Vapor Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
R. Chowdhury ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructure And Properties ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Deposited Films

ABSTRACTLaser physical vapor deposition (LPVD) has been used to deposit thin CoSi2 films on (001)silicon at different substrate temperatures ranging from room temperature to 600°C. Particulate-free silicide thin films were characterized by X-ray diffraction, Rutherford backscattering, and high resolution transmission electron microscopy. We have found that films deposited at 200°C and below are amorphous; 400°C deposited films are polycrystalline whereas films deposited at 600°C are of epitaxial nature. The Effect of subsequent annealing on resistivity of room-temperature deposited thin films has been investigated. The resistivity value decreases to less than 15 μΩcm after annealing making these films suitable for microelectronics applications. The correlation between microstructure and properties of these films are discussed.

scholarly journals Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si

2021 ◽  
Vol 32 (6) ◽  
pp. 7123-7135
Author(s):  
D. Thammaiah Shivakumar ◽  
Tihomir Knežević ◽  
Lis K. Nanver
Keyword(s):  
Electron Beam ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Anode Region ◽  
Junction Depth ◽  
Cu Metallization ◽  
Temperature Interactions

AbstractMetallization layers of aluminum, gold, or copper are shown to be protected from interactions with silicon substrates by thin boron layers grown by chemical-vapor deposition (CVD) at 450 °C. A 3-nm-thick B-layer was studied in detail. It formed the p+-anode region of PureB diodes that have a metallurgic junction depth of zero on n-type Si. The metals were deposited by electron-beam-assisted physical vapor deposition (EBPVD) at room temperature and annealed at temperatures up to 500 °C. In all cases, the B-layer was an effective material barrier between the metal and Si, as verified by practically unchanged PureB diode I–V characteristics and microscopy inspections of the deposited layers. For this result, it was required that the Si surface be clean before B-deposition. Any Si surface contamination was otherwise seen to impede a complete B-coverage giving, sometimes Schottky-like, current increases. For Au, room-temperature interactions with the Si through such pinholes in the B-layer were excessive after the 500 °C anneal.

Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si1−x−yGexCy Thin Films on Si(100) Substrate

1999 ◽  
Vol 592 ◽  
Author(s):  
X. M. Cheng ◽  
Y. D. Zheng ◽  
L. Zang ◽  
X. B. Liu ◽  
S. M. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Photoluminescence Spectra

ABSTRACTThe thermally oxidized Si1−x−yGexCy thin films were grown on silicon substrates by Plasma-enhanced Chemical Vapor Deposition (PECVD) and then wet oxidized at 800°C for 20 minutes. Photoluminescence spectra of the samples were measured at room temperature under 250nm excitation. Two ultraviolet photoluminescence bands with the peaks at ∼370nm and ∼396nm were observed in the oxidized samples. Possible mechanism of this photoluminescence is discussed.

Influence of Deposition Parameters on the Composition and Structure of Reactively Sputtered Nanocomposite TaC/a-C:H Thin Films

2005 ◽  
Vol 20 (9) ◽  
pp. 2583-2596 ◽  
Author(s):  
Ryan D. Evans ◽  
Jane Y. Howe ◽  
James Bentley ◽  
Gary L. Doll ◽  
Jeffrey T. Glass
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Rotation Rate ◽  
Tantalum Carbide ◽  
Process Conditions ◽  
Deposition Parameters ◽  
Composition And Structure ◽  
Dc Bias

The properties of nanocomposite tantalum carbide/amorphous hydrocarbon (TaC/a-C:H) thin films depend closely on reactive magnetron sputtering deposition process conditions. The chemical composition and structure trends for TaC/a-C:H films were obtained as a function of three deposition parameters: acetylene flow rate, applied direct current (dc) bias voltage, and substrate carousel rotation rate. Films were deposited according to a 23 factorial experimental design to enable multiple linear regression modeling of property trends. The Ta/C atomic ratio, hydrogen content, total film thickness, TaC crystallite size, and Raman spectra were statistically dependent on acetylene flow rate, applied dc bias voltage, or both. Transmission electron microscopy revealed a nanometer-scale lamellar film structure, the periodicity of which was affected mostly by substrate carousel rotation rate. The empirical property trends were interpreted with respect to hypothesized growth mechanisms that incorporate elements of physical vapor deposition and plasma-enhanced chemical vapor deposition.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

The Materials Science of “Permeable Polysilicon” Thin Films

2001 ◽  
Vol 687 ◽  
Author(s):  
George M Dougherty ◽  
Timothy Sands ◽  
Albert P. Pisano
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Materials Science ◽  
Single Step ◽  
Process Window ◽  
Silicon Thin Films ◽  
Growth Regime ◽  
Deposition Parameters ◽  
Simple Kinetic Model ◽  
The Relationship

AbstractPolycrystalline silicon thin films that are permeable to fluids, known as permeable polysilicon, have been reported by several researchers. Such films have great potential for the fabrication of difficult to make MEMS structures, but their use has been hampered by poor process repeatability and a lack of physical understanding of the origin of film permeability and how to control it. We have completed a methodical study of the relationship between process, microstructure, and properties for permeable polysilicon thin films. As a result, we have determined that the film permeability is caused by the presence of nanoscale pores, ranging from 10-50 nm in size, that form spontaneously during LPCVD deposition within a narrow process window. The unusual microstructure within this process window corresponds to the transition between a semicrystalline growth regime, exhibiting tensile residual stress, and a columnar growth regime exhibiting compressive residual stress. A simple kinetic model is proposed to explain the unusual morphology within this transition regime. It is determined that measurements of the film residual stress can be used to tune the deposition parameters to repeatably produce permeable films for applications. The result is a convenient, single-step process that enables the elegant fabrication of many previously challenging structures.

Off-Line Direct Deposition Gas Chromatography/Surface-Enhanced Raman Scattering and the Ramifications for On-Line Measurements

2005 ◽  
Vol 59 (11) ◽  
pp. 1305-1309 ◽  
Author(s):  
David A. Heaps ◽  
Peter R. Griffiths
Keyword(s):  
Gas Chromatography ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Warm Up ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
On Line ◽  
Enhanced Raman Scattering ◽  
Moving Liquid

Surface-enhanced Raman spectra (SERS) of molecules separated by gas chromatography (GC) were measured off-line by condensing the analyte on a moving, liquid-nitrogen-cooled ZnSe window on which a 5 nm layer of silver had been formed by physical vapor deposition. After the components that eluted from the chromatograph had been deposited, the substrate was allowed to warm up to room temperature and transferred to the focus of a Raman microspectrometer where the spectrum of each component was measured. Band intensities in the spectrum of 3 ng of caffeine prepared in this way were approximately the same as in the spectrum of bulk caffeine. By making some logical assumptions, it was shown that identifiable GC/SERS spectra of 30 pg of many molecules could be measured over a 300 cm−1 region in real-time and that if an optimized substrate were used the minimum identifiable quantity could be reduced to 1 pg or less.

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