scholarly journals Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si

2021 ◽  
Vol 32 (6) ◽  
pp. 7123-7135
Author(s):  
D. Thammaiah Shivakumar ◽  
Tihomir Knežević ◽  
Lis K. Nanver
Keyword(s):  
Electron Beam ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Anode Region ◽  
Junction Depth ◽  
Cu Metallization ◽  
Temperature Interactions

AbstractMetallization layers of aluminum, gold, or copper are shown to be protected from interactions with silicon substrates by thin boron layers grown by chemical-vapor deposition (CVD) at 450 °C. A 3-nm-thick B-layer was studied in detail. It formed the p+-anode region of PureB diodes that have a metallurgic junction depth of zero on n-type Si. The metals were deposited by electron-beam-assisted physical vapor deposition (EBPVD) at room temperature and annealed at temperatures up to 500 °C. In all cases, the B-layer was an effective material barrier between the metal and Si, as verified by practically unchanged PureB diode I–V characteristics and microscopy inspections of the deposited layers. For this result, it was required that the Si surface be clean before B-deposition. Any Si surface contamination was otherwise seen to impede a complete B-coverage giving, sometimes Schottky-like, current increases. For Au, room-temperature interactions with the Si through such pinholes in the B-layer were excessive after the 500 °C anneal.

Freestanding FeCrAl-Y2O3 Amorphous/Crystalline Composite Coating Fabricated by Electron-Beam Physical Vapor Deposition

2014 ◽  
Vol 788 ◽  
pp. 652-656
Author(s):  
Xiu Lin ◽  
Guang Ping Song ◽  
Hua Song Gou ◽  
Yi Jie Zhao ◽  
Yang Chen ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Composite Coating ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Crystallization Activation Energy ◽  
Substrate Side ◽  
Columnar Grains

Freestanding FeCrAl-Y2O3 amorphous/crystalline composite coating with a thickness of about 200μm has been produced from electron-beam physical vapor deposition of FeCrAl and yttria materials with a substrate temperature of 500 oC around. The microstructure was composed of columnar grains near the substrate side and an amorphous top layer. Local crystallization occurred during room temperature preservation. It is inferred that the crystallization activation energy of the material is very low.

scholarly journals Room temperature PVD TiN to improve the ferroelectric properties of HZO films in the BEoL

MRS Advances ◽  
2021 ◽  
Author(s):  
David Lehninger ◽  
Konstantin Mertens ◽  
Lukas Gerlich ◽  
Maximilian Lederer ◽  
Tarek Ali ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Hafnium Oxide ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Logic Device ◽  
Process Gas ◽  
The Impact

Abstract Zirconium-doped hafnium oxide (HZO) crystallizes at low temperatures and is thus ideal to implement ferroelectric (FE) functionalities into the back end of line (BEoL). Therefore, metal-ferroelectric-metal (MFM) capacitors are of great interest. Placed in the BEoL, they can be connected either to the drain- or the gate-contact of a standard logic device to realize different emerging FE-embedded non-volatile memory (eNVM) concepts. However, the low crystallization temperature increases also the risk for a premature crystallization of the HZO films during the growth of the top electrode (TE), in particular, if high-temperature processes like atomic layer deposition (ALD) or chemical vapor deposition (CVD) are used. Herein, the TE is deposited at room temperature via physical vapor deposition (PVD). The impact of different process gas flows on the FE properties of the HZO films is studied by X-ray diffraction and polarization versus electric field measurements. Graphic abstract

Comparative Study of Solid-Phase Crystallization of Amorphous Silicon Deposited by Hot-wire CVD, Plasma-Enhanced CVD, and Electron-Beam Evaporation

2007 ◽  
Vol 989 ◽  
Author(s):  
Paul Stradins ◽  
Oliver Kunz ◽  
David L. Young ◽  
Yanfa Yan ◽  
Kim M. Jones ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Growth Front ◽  
Hot Wire ◽  
Solid Phase Crystallization

AbstractSolid-phase crystallization (SPC) rates are compared in amorphous silicon films prepared by three different methods: hot-wire chemical vapor deposition (HWCVD), plasma-enhanced chemical vapor deposition (PECVD), and electron-beam physical vapor deposition (e-beam). Random SPC proceeds approximately 5 and 13 times slower in PECVD and e-beam films, respectively, as compared to HWCVD films. Doping accelerates random SPC in e-beam films but has little effect on the SPC rate of HWCVD films. In contrast, the crystalline growth front in solid-phase epitaxy experiments propagates at similar speed in HWCVD, PECVD, and e-beam amorphous Si films. This strongly suggests that the observed large differences in random SPC rates originate from different nucleation rates in these materials while the grain growth rates are relatively similar. The larger grain sizes observed for films that exhibit slower random SPC support this suggestion.

Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si1−x−yGexCy Thin Films on Si(100) Substrate

1999 ◽  
Vol 592 ◽  
Author(s):  
X. M. Cheng ◽  
Y. D. Zheng ◽  
L. Zang ◽  
X. B. Liu ◽  
S. M. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Photoluminescence Spectra

ABSTRACTThe thermally oxidized Si1−x−yGexCy thin films were grown on silicon substrates by Plasma-enhanced Chemical Vapor Deposition (PECVD) and then wet oxidized at 800°C for 20 minutes. Photoluminescence spectra of the samples were measured at room temperature under 250nm excitation. Two ultraviolet photoluminescence bands with the peaks at ∼370nm and ∼396nm were observed in the oxidized samples. Possible mechanism of this photoluminescence is discussed.

Influence of the Deposition Parameters on the Electrical and Mechanical Properties of Physically Vapor-Deposited Iridium and Rhodium Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
Ilan Golecki ◽  
Margaret Eagan
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Process Window ◽  
Process Conditions ◽  
Silicon Substrates ◽  
Deposition Parameters ◽  
Thin Chromium

AbstractIridium and rhodium thin films have been formed by e-gun physical vapor deposition on thin-chromium-coated, thermally-oxidized, silicon substrates. Cr, Ir and Rh deposition rates and substrate temperature during deposition were measured and controlled. The effects of the latter deposition parameters on the sheet resistance and stress of the Ir and Rh films are presented and it is demonstrated that both stress and sheet resistance can be desirably minimized by proper choice of the process conditions. The resistivity of these Rh and Ir thin films has been measured at room temperature. Rh can be formed in a wider process window than Ir. Rh films with Rsh = 0.1 Ω/square have been obtained at a thickness of 0.6 ¼m.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

scholarly journals Noble Metals for Modern Implant Materials: MOCVD of Film Structures and Cytotoxical, Antibacterial, and Histological Studies

Biomedicines ◽  
2021 ◽  
Vol 9 (8) ◽  
pp. 851
Author(s):  
Svetlana I. Dorovskikh ◽  
Evgeniia S. Vikulova ◽  
Elena V. Chepeleva ◽  
Maria B. Vasilieva ◽  
Dmitriy A. Nasimov ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Noble Metals ◽  
Mononuclear Cells ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Ti Alloy ◽  
Peripheral Blood Mononuclear ◽  
Histological Studies

This work is aimed at developing the modification of the surface of medical implants with film materials based on noble metals in order to improve their biological characteristics. Gas-phase transportation methods were proposed to obtain such materials. To determine the effect of the material of the bottom layer of heterometallic structures, Ir, Pt, and PtIr coatings with a thickness of 1.4–1.5 μm were deposited by metal–organic chemical vapor deposition (MOCVD) on Ti6Al4V alloy discs. Two types of antibacterial components, namely, gold nanoparticles (AuNPs) and discontinuous Ag coatings, were deposited on the surface of these coatings. AuNPs (11–14 nm) were deposited by a pulsed MOCVD method, while Ag films (35–40 nm in thickness) were obtained by physical vapor deposition (PVD). The cytotoxic (24 h and 48 h, toward peripheral blood mononuclear cells (PBMCs)) and antibacterial (24 h) properties of monophase (Ag, Ir, Pt, and PtIr) and heterophase (Ag/Pt, Ag/Ir, Ag/PtIr, Au/Pt, Au/Ir, and Au/PtIr) film materials deposited on Ti-alloy samples were studied in vitro and compared with those of uncoated Ti-alloy samples. Studies of the cytokine production by PBMCs in response to incubation of the samples for 24 and 48 h and histological studies at 1 and 3 months after subcutaneous implantation in rats were also performed. Despite the comparable thickness of the fibrous capsule after 3 months, a faster completion of the active phase of encapsulation was observed for the coated implants compared to the Ti alloy analogs. For the Ag-containing samples, growth inhibition of S. epidermidis, S. aureus, Str. pyogenes, P. aeruginosa, and Ent. faecium was observed.

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