Ion Implantation and Annealing of Crystalline Oxides

1985 ◽  
Vol 60 ◽  
Author(s):  
C. W. White ◽  
P. S. Sklad ◽  
L. A. Boatner ◽  
G. C. Farlow ◽  
C. J. McHargue ◽  
...  
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Single Crystal ◽  
Solid Phase ◽  
Planar Interface ◽  
Solid Phase Epitaxy ◽  
Surface Layers ◽  
Α Phase ◽  
Amorphous Surface ◽  
Crystalline Oxides

AbstractThe crystallization of amorphous surface layers produced by ion implantation of single-crystal α-Al2O3 and CaTiO3 are discussed. During annealing, amorphous A12O3 converts first to the α-phase. The crystallized γ then transforms to the a-phase by the motion of a well-defined planar interface. The temperature dependence of the velocity of the γ/α interface has been measured and is characterized by an activation energy of ∼3.6 eV. In CaTiO3, crystallization of the amorphous phase takes place by solid-phase epitaxy. The velocity of the amorphous/crystal interface is characterized by an activation energy of 1.3 eV.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Amorphous Germanium

2008 ◽  
Vol 1070 ◽  
Author(s):  
Brett Cameron Johnson ◽  
Paul Gortmaker ◽  
Jeffrey C. McCallum
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Fermi Level ◽  
Concentration Profile ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Germanium ◽  
Time Resolved ◽  
Temperature Range ◽  
Kinetics Of

ABSTRACTThe kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are studied in thick amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates for H-free Ge were measured with a time-resolved reflectivity (TRR) system in the temperature range 300 – 540 °C and found to have an activation energy of (2.15 ± 0.04) eV. Dopant enhanced SPE was measured in a-Ge layers containing a uniform concentration profile of implanted As spanning the concentration regime 1 – 10 × 1019 cm3. The generalized Fermi level shifting model shows excellent fits to the data.

Furnace Anneal of A–Axis Sapphire Amorphised by Indium Ion Implantation

1988 ◽  
Vol 128 ◽  
Author(s):  
D. K. Sood ◽  
D. X. Cao
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Amorphous Phase ◽  
Isothermal Annealing ◽  
Amorphous Layer ◽  
Surface Layers ◽  
Epitaxial Regrowth ◽  
Rapid Diffusion ◽  
Amorphous Surface ◽  
Higher Doses

ABSTRACTIndium implantation at 77°K into a–axis sapphire to peak concentrations of 6–45 mol % In produces amorphous surface layers. Isothermal annealing in Ar at temperatures between 600–900°C shows effects strongly dependent on ion dose. At lower doses <2×1016 In/cm2, the amorphous layer undergoes epitaxial regrowth as the amorphous to crystalline interface advances out towards the surface. Regrowth velocity is high in about the first half hour of the anneal. Regrowth obeys Arrhenius behaviour with an activation energy of 0.7eV for initial faster growth and 1.28eV for further anneal times. The amorphous phase transforms directly to ⊥-A12O3 without any evidence of an intermediary γ-phase. At higher doses, epitaxial regrowth is substantially retarded and rapid diffusion of In within the amorphous phase dominates.

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4234-4237
Author(s):  
XUEQIN LIU ◽  
CONGMIAN ZHEN ◽  
YINYUE WANG ◽  
JING ZHANG ◽  
YUEJIAO PU ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Transport Properties ◽  
Hall Mobility ◽  
Carrier Transport ◽  
Lattice Strain ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Strained Si ◽  
Carrier Transport Properties

Si 0.875-y Ge 0.125 C y ternary alloy films were grown on Si by ion implantation of C into Si 0.875 Ge 0.125 layers and subsequent solid phase epitaxy. It was shown that C atoms were nearly incorporated into substitutional sites and no SiC was formed in the SiGeC films by optimal two-step annealing. There is a prominent effect of C contents on carrier transport properties. Compared with strained Si 0.875 Ge 0.125 film, enhanced Hall mobility has been obtained in partially and fully strain compensated Si 0.875-y Ge 0.125 C y layer due to the reduction of lattice strain.

Damage removal following low energy ion implantation

1988 ◽  
Vol 46 ◽  
pp. 906-907
Author(s):  
Edward R. Myers
Keyword(s):  
Ion Implantation ◽  
Large Scale ◽  
Solid Phase ◽  
Semiconductor Industry ◽  
Amorphous Layer ◽  
Light Ions ◽  
Large Scale Integration ◽  
Amorphous Surface ◽  
Scale Integration ◽  
Spatial Locations

Ion implantation has become the most common method of doping in the semiconductor industry. Precise concentration profiles with exact spatial locations are achievable. However, direct implantation of the desired dopant does not always meet the stringent size requirements of ultra large scale integration (ULSI). Implantation of light ions, such as boron, tend to channel down open crystallographic orientations in crystalline substrates resulting in enhanced ion penetration and an extended doping tail. Channeling can be prevented by creation of an amorphous surface layer prior to the dopant implant. The amorphous layer can be created by implanting heavy isoelectronic ions, such as Ge+, or by implanting molecular dopant ions like BF2. Solid phase epitaxial (SPE) regrowth restores the crystallinity of the amorphous layer and activates the dopant. However, the ion implantation process damages the crystalline material adjacent to the amorphous- crystalline (a/c) interface.

Amorphous Nb40ni60 produced by Ni+ ion implantation

1978 ◽  
Vol 36 (1) ◽  
pp. 388-389
Author(s):  
M. D. Rechtin ◽  
J. Vander Sande ◽  
P. M. Baldo
Keyword(s):  
Ion Implantation ◽  
Metallic Glasses ◽  
Radiation Environment ◽  
Attractive Potential ◽  
Thermal Spike ◽  
Surface Layers ◽  
Transition Metal Alloy ◽  
New Class ◽  
Mechanical Hardness ◽  
Amorphous Surface

Metallic glasses have recently evolved as an important new class of materials which can exhibit unexpected and highly desirable physical properties compared to their crystalline counterparts. Recent work on amorphous Nb40Ni60 has shown this alloy to have excellent resistance to displacement radiation damage effects to 900 K. This phenomenon, in conjunction with thermal stability to nearly 1000 K, and excellent mechanical hardness and strength, makes this refractory-transition metal alloy an attractive potential material for radiation environment applications. Some types of metallic glasses are available commercially as thin ribbons or filaments; however, the shape, size, and type of alloy available often limit their applications. In addition, ion implantation has been used to produce amorphous surface layers in some metal- metalloid systems such as Ni-P. This method of surface layer modification may be applied to unusual shapes and sizes.Furthermore, the thermal spike produced by ion implantation results in a cooling rate of ∽1014 K/sec in the vicinity of the collision cascade.

Crystallization Kinetics of Fe-DOPED A1203

1994 ◽  
Vol 357 ◽  
Author(s):  
Todd W. Simpson ◽  
Ian V. Mitchell ◽  
Ning Yu ◽  
Michael Nastasi ◽  
Paul C. Mcintyre
Keyword(s):  
Crystallization Kinetics ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Time Resolved ◽  
Α Phase ◽  
Kinetics Of ◽  
Beam Deposition

AbstractTime resolved optical reflectivity (TRR) and Rutherford backscattering spectrometry (RBS) and ion channelling methods have been applied to determine the crystallization kinetics of Fe-doped A1203 in the temperature range of 900-1050°C. Amorphous A1203 films, approximately 250 nm thick and with Fe cation concentrations of 0, 1.85, 2.2 and 4.5%, were formed by e-beam deposition on single crystal, [0001] oriented, A1203 substrates. Annealing was performed under an oxygen ambient in a conventional tube furnace, and the optical changes which accompany crystallization were monitored, in situ, by TRR with a 633nm wavelength laser.Crystallization is observed to proceed via solid phase epitaxy. An intermediate, epitaxial phase of -γ-Al203 is formed before the samples reach the ultimate annealing temperature. The 5% Fe-doped film transforms from γ to α-A1203 at a rate approximately 10 times that of the pure A1203 film and the 1.85% and 2.2% Fe-doped films transform at rates between these two extremes. The Fe-dopants occupy substitional lattice sites in the epilayer. Each of the four sets of specimens displays an activation energy in the range 5.0±0.2eV for the γ,α phase transition.

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