A Physically Based Modeling of Boron TED in Amorphised Si

2000 ◽  
Vol 610 ◽  
Author(s):  
Evelyne Lampin ◽  
Vincent Senez ◽  
Alain Claveriel
Keyword(s):  
Ostwald Ripening ◽  
Physically Based Modeling ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Experimental Conditions ◽  
Physically Based ◽  
Free Interstitial ◽  
Recombination Velocity ◽  
Process Simulator

AbstractWe have developed a physically based modeling of TED of implanted boron in amorphised Si. The simulation starts with a supersaturation of Si free interstitials located below the amorphous/crystalline interface which, upon annealing, tend to diffuse out or to precipitate in the form of extended defects (clusters, {113}s, dislocation loops). The modeling of the nucleation and growth of these defects is divided into three distinct stages: the nucleation, the “pure growth” and the Ostwald ripening. This system can interact with a surface (characterized by a given recombination velocity for Si interstitials) only after the SPE regrowth is completed. Implementation of this model into a process simulator allows to describe the isothermal and isochronal evolutions of the sizes and of the densities of dislocation loops in agreement with TEM observations. Assuming that boron diffusion is caused by the concomitant time and space variations of the free interstitial supersaturation in the wafer, TED can be accurately predicted for a variety of experimental conditions.

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling

2002 ◽  
Vol 717 ◽  
Author(s):  
Fuccio Cristiano ◽  
Benjamin Colombeau ◽  
Bernadette de Mauduit ◽  
Caroline Bonafos ◽  
Gerard Benassayag ◽  
...  
Keyword(s):  
Ostwald Ripening ◽  
Thermal Evolution ◽  
Extensive Study ◽  
Extended Defects ◽  
Experimental Conditions ◽  
Annealing Conditions ◽  
Physically Based ◽  
Free Interstitial ◽  
Extrinsic Defects ◽  
Ion Implanted

AbstractWe present an extensive study of the thermal evolution of the extended defects found in ion implanted Si as a function of annealing conditions. We will first review their structure and energetics and show that the defect kinetics can be described by an Ostwald ripening process whereby the defects exchange Si atoms and evolve in size and type to minimise their formation energy. Finally, we will present a physically based model to predict the evolution of extrinsic defects during annealing through the calculation of defect densities, size distributions, number of clustered interstitials and free-interstitial supersaturation. We will show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantation energies.

On the Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion

2000 ◽  
Vol 610 ◽  
Author(s):  
Alain Claverie ◽  
Filadelfo Cristiano ◽  
Benjamin Colombeau ◽  
Nicholas Cowern
Keyword(s):  
Formation Energy ◽  
Ostwald Ripening ◽  
High Dose ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Dynamical Equilibrium ◽  
Defect Interactions ◽  
Small Clusters ◽  
Dose Levels ◽  
Extrinsic Defects

AbstractIn this paper, we discuss the mechanisms by which small clusters evolve through “magic” sizes into {113} defects and then, at sufficiently high dose levels, transform into dislocation loops of two types. This ripening process is mediated by the interchange of free Si(int)s between different extended defects, leading to a decrease of their formation energy. The calculation of the supersaturation of free Si-interstitials in dynamical equilibrium with these defects shows a hierarchy of levels of nonequilibrium diffusion, ranging from supersaturations S of about 106 in the presence of small clusters, through 103 in the presence of {113} defects, to S in the range 100 down to 1 as loops are formed, evolve and finally evaporate. A detailed analysis of defect energetics has been carried out and it is shown that Ostwald ripening is the key concept for understanding and modelling defect interactions during TED of dopants in silicon.

Physically based modeling of dislocation loops in ion implantation processing in silicon

2005 ◽  
Vol 124-125 ◽  
pp. 404-408 ◽  
Author(s):  
P. Castrillo ◽  
I. Martin-Bragado ◽  
R. Pinacho ◽  
M. Jaraiz ◽  
J.E. Rubio ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Physically Based Modeling ◽  
Dislocation Loops ◽  
Physically Based

Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers

1996 ◽  
Vol 438 ◽  
Author(s):  
A. Claverie ◽  
C. Bonafos ◽  
M. Omri ◽  
B. De Mauduit ◽  
G. Ben Assayag ◽  
...  
Keyword(s):  
Ostwald Ripening ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Interstitial Atoms ◽  
Extrinsic Dislocation ◽  
The Mean ◽  
Boron Diffusivity ◽  
Shed Light

AbstractTransient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects.For this reason, we discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops and responsible for TED. This initial supersaturation is, before annealing, at least 5 decades larger than the equilibrium value and exponentially decays with time upon annealing with activation energies that are the same than the ones observed for TED. It is shown that this time decay is precisely at the origin of the transient enhancement of boron diffusivity through the interstitial component of boron diffusion. Side experiments shed light on the effect of the proximity of a free surface on the thermal behavior of EOR defects and allow us to quantitatively describe the space and time evolutions of boron diffusivity upon annealing of preamorphised Si layers.

Boron Ted in Pre-Amorphised SI: Role of the A/C Interface

1998 ◽  
Vol 532 ◽  
Author(s):  
D. Mathiot ◽  
C. Bonafos ◽  
M. OMRI ◽  
D. Alquier ◽  
A. Martinez ◽  
...  
Keyword(s):  
Ostwald Ripening ◽  
The Self ◽  
Experimental Results ◽  
Extended Defects ◽  
Dopant Diffusion ◽  
Boron Diffusion ◽  
Nucleation Stage ◽  
Diffusion Enhancement

ABSTRACTIn this paper we first review the main experimental results concerning boron diffusion in preamorphised silicon, focusing on the role played by the End Of Range defects. It is then shown that the application of the Ostwald ripening theory to the particular geometry of these defects permits to understand why and how they affect dopant diffusion. Contradictory experimental results can be reconciled if one considers that most of the diffusion enhancement occurs during the nucleation stage of the extended defects, and that the amorphous / crystalline interface is a perfect screen for the diffusion of the self-interstitials.

Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers

1996 ◽  
Vol 439 ◽  
Author(s):  
A. Claverie ◽  
C. Bonafos ◽  
M. Omri ◽  
B. De Mauduit ◽  
G. Ben Assayag ◽  
...  
Keyword(s):  
Ostwald Ripening ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Interstitial Atoms ◽  
Extrinsic Dislocation ◽  
The Mean ◽  
Boron Diffusivity ◽  
Shed Light

AbstractTransient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects.For this reason, we discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops and responsible for TED. This initial supersaturation is, before annealing, at least 5 decades larger than the equilibrium value and exponentially decays with time upon annealing with activation energies that are the same than the ones observed for TED. It is shown that this time decay is precisely at the origin of the transient enhancement of boron diffusivity through the interstitial component of boron diffusion. Side experiments shed light on the effect of the proximity of a free surface on the thermal behavior of EOR defects and allow us to quantitatively describe the space and time evolutions of boron diffusivity upon annealing of preamorphised Si layers.

scholarly journals Effect of Low-Temperature Annealing on Creep Properties of AlSi10Mg Alloy Produced by Additive Manufacturing: Experiments and Modeling

Metals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 179
Author(s):  
Chiara Paoletti ◽  
Emanuela Cerri ◽  
Emanuele Ghio ◽  
Eleonora Santecchia ◽  
Marcello Cabibbo ◽  
...  
Keyword(s):  
Creep Rate ◽  
Applied Stress ◽  
Minimum Creep Rate ◽  
Annealing Treatment ◽  
Constant Load ◽  
Experimental Conditions ◽  
Creep Properties ◽  
Low Temperature Annealing ◽  
Physically Based ◽  
Excellent Description

The effects of postprocessing annealing at 225 °C for 2 h on the creep properties of AlSi10Mg alloy were investigated through constant load experiments carried out at 150 °C, 175 °C and 225 °C. In the range of the experimental conditions here considered, the annealing treatment resulted in an increase in minimum creep rate for a given stress. The reduction in creep strength was higher at the lowest temperature, while the effect progressively vanished as temperature increased and/or applied stress decreased. The minimum creep rate dependence on applied stress was modeled using a physically-based model which took into account the ripening of Si particles at high temperature and which had been previously applied to the as-deposited alloy. The model was successfully validated, since it gave an excellent description of the experimental data.

Physically Based Modeling of Cold Load Pickup

1981 ◽  
Vol PER-1 (9) ◽  
pp. 27-28 ◽  
Author(s):  
Satoru Ihara ◽  
Fred C. Schweppe
Keyword(s):  
Physically Based Modeling ◽  
Physically Based

Physically based modeling of the mechanical behavior of TRIP steels

2008 ◽  
Vol 1 (S1) ◽  
pp. 57-60 ◽  
Author(s):  
J. Bouquerel ◽  
K. Verbeken ◽  
J. Van Slycken ◽  
P. Verleysen ◽  
Y. Houbaert
Keyword(s):  
Mechanical Behavior ◽  
Physically Based Modeling ◽  
Trip Steels ◽  
Physically Based

Growth Mechanism and Electrochemical Properties of Porous Hollow Tin Dioxide Nanospheres

NANO ◽  
2015 ◽  
Vol 10 (06) ◽  
pp. 1550087 ◽  
Author(s):  
Youwen Yang ◽  
Dongming Ma ◽  
Ting Cheng ◽  
Yuanhao Gao ◽  
Guanghai Li
Keyword(s):  
Growth Mechanism ◽  
Tin Dioxide ◽  
Ostwald Ripening ◽  
Lithium Ion ◽  
Average Diameter ◽  
Reversible Capacity ◽  
Cycling Performance ◽  
Experimental Conditions ◽  
Electrochemical Tests ◽  
Hydrolysis Method

Porous hollow SnO 2 nanospheres were prepared by means of enforced Sn 2+ hydrolysis method under hydrochloric acid medium. These hollow nanospheres with an average diameter of 220nm had a very thin shell thickness of about 40nm and were surrounded by elongated octahedral-like nanoparticles with the apex oriented outside. The experimental conditions, such as HCl content, reaction temperature and time directly dominated the morphology, structure and crystallinity of the obtained samples. A pre-oxidation-nucleation-growth mechanism and inside-out Ostwald-ripening method was proposed on the basis of the previous research and time-dependent experiments. Electrochemical tests showed that the porous hollow SnO 2 nanospheres exhibited improved cycling performance for anode materials of lithium-ion batteries, which retained a high reversible capacity of 540.0mAhg-1, and stable cyclic retention at 120th cycle.

Sign in / Sign up

Export Citation Format

Share Document