Structure and Property Characterization of Porous Low-k Dielectric Constant Thin Films using X-ray Reflectivity and Small Angle Neutron Scattering

2000 ◽  
Vol 612 ◽  
Author(s):  
Eric K. Lin ◽  
Wen-li Wu ◽  
Changming Jin ◽  
Jeffrey T. Wetzel

AbstractHigh-resolution X-ray reflectivity and small angle neutron scattering measurements are used as complementary techniques to characterize the structure and properties of porous thin films for use as low-k interlevel dielectric (ILD) materials. With the addition of elemental composition information, the average pore size, porosity, pore connectivity, matrix density, average film density, film thickness, coefficient of thermal expansion, and moisture uptake of porous thin films are determined. Examples from different classes of materials and two analysis methods for small angle neutron scattering data are presented and discussed.

2000 ◽  
Vol 612 ◽  
Author(s):  
Wen-li Wu ◽  
Eric K. Lin ◽  
Changming Jin ◽  
Jeffrey T. Wetzel

AbstractA methodology to characterize nanoporous thin films based on a novel combination of high-resolution specular x-ray reflectivity and small-angle neutron scattering has been advanced to accommodate heterogeneities within the material surrounding nanoscale voids. More specifically, the average pore size, pore connectivity, film thickness, wall or matrix density, coefficient of thermal expansion, and moisture uptake of nanoporous thin films with non-homogeneous solid matrices can be measured. The measurements can be performed directly on films up to 1.5 µm thick while supported on silicon substrates. This method has been successfully applied to a wide range of industrially developed materials for use as low-k interlayer dielectrics.


2000 ◽  
Vol 87 (3) ◽  
pp. 1193-1200 ◽  
Author(s):  
Wen-li Wu ◽  
William E. Wallace ◽  
Eric K. Lin ◽  
Gary W. Lynn ◽  
Charles J. Glinka ◽  
...  

2008 ◽  
Vol 8 (3) ◽  
pp. 1221-1227 ◽  
Author(s):  
Ashish K. Keshari ◽  
Avinash C. Pandey

The uniqueness of size dependent functional properties of II–VI semiconductor nanocrystals have led to the development of various techniques for determination of shape, size and distributions, although the accurate measurements of the particle sizes has always been a fundamental task in nanoscience and even become more crucial with the discovery of quantum confinement effect. Acomparison of the well established techniques X-ray diffraction (XRD), small angle X-ray scattering (SAXS) and small angle neutron scattering (SANS) with an emphasis on size and distribution of the prepared samples are reported in order to elaborate more precise techniques for the analysis of particles sizes. Modified Scherrer formula for spherical particles has been used to calculate the particle sizes from XRD spectra. Analysis of SAXS data has been reported using Guinier model. Small angle neutron scattering measurements has been performed for ZnO nanocrystals and the scattering data obtained is simulated for polydisperse sphere. The bare ZnO, ZnS and CdS and doped with Mn2+ systems are taken within the framework of our discussion. These materials were synthesized by chemical precipitation route and found to have size distribution from 2 to 6 nm for spherical particles. Sizes determined from various techniques are in good agreement with each other however small angle scattering technique is more reliable than XRD to determine the sizes of the nanoparticles.


2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.


2013 ◽  
Vol 46 (3) ◽  
pp. 788-790 ◽  
Author(s):  
Andreas Michels ◽  
Jens-Peter Bick

Real-space magnetic small-angle neutron scattering data from nanocrystalline cobalt and nickel have been analysed in terms of a recently developed micromagnetic theory for the autocorrelation function of the spin misalignment [Michels (2010).Phys. Rev. B,82, 024433]. The approach provides information on the exchange-stiffness constant and on the mean magnetic `anisotropy-field' radius.


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