Heteroepitaxial Barium Hexaferrite Films on (111) Magnesium Oxide Substrates

AbstractHigh quality films of barium hexaferrite (BaFe12O19) were deposited by pulsed laser ablation onto MgO (111) substrates. In contrast to previous films deposited onto c-plane sapphire (Al203), these films were expected to have compressive biaxial stress, and indeed showed no indications for either cracking or delamination to a film thickness of 32 νm. All films were found to be highly c-axis textured by both x-ray diffraction measurements and magnetization results. The saturation magnetization (4πMs = 4.2 kG) and uniaxial anisotropy field (HA = 16 kOe) values for these films approach bulk values. Ferrimagnetic resonance measurements on a calcined 3 μm thick film show a narrow linewidth (ΔH ∼ 100 Oe) for the uniform resonance mode. The properties of these films approach those required for self-biased millimeter wavelength devices.

Download Full-text

In-Plane Uniaxial Magnetic Anisotropy of Cobalt Doped Y3Fe5O12 Epitaxial Films

MRS Proceedings ◽

10.1557/proc-603-95 ◽

1999 ◽

Vol 603 ◽

Cited By ~ 2

Author(s):

Darren Dale ◽

G. Hu ◽

Vincent Balbarin ◽

Y. Suzuki

Keyword(s):

Uniaxial Anisotropy ◽

Pulsed Laser ◽

Epitaxial Films ◽

Laser Deposition ◽

X Ray Diffraction ◽

X Ray ◽

Garnet Films ◽

Integrated Devices ◽

Potential Applications ◽

Order Of Magnitude

AbstractIn an effort to develop a magnetic biasing layer for potential applications in integrated devices, we have grown thin films of Y3Fe5O12 with increased uniaxial anisotropy by doping with varying Co2+, concentration. To compensate for the charge differential between Co2+ and Fe3+, Ge4+ and Ce4+ are substituted for Fe3+ and y3+, respectively. These garnet films, prepared using pulsed laser deposition on (110) oriented Gd3Ga5O12 substrates, exhibit excellent crystallinity as determined from X-ray diffraction and Rutherford backscattering spectroscopy. The addition of Co2+ in Y3Fe5O12 films enhances the in-plane uniaxial anisotropy over an order of magnitude, depending on composition.

Download Full-text

Polydomain Structure of Epitaxial PbTiO3 films on MgO

MRS Proceedings ◽

10.1557/proc-493-111 ◽

1997 ◽

Vol 493 ◽

Cited By ~ 1

Author(s):

S. P. Alpay ◽

A. S. Prakash ◽

S. Aggarwal ◽

R. Ramesh ◽

A. L. Roytburd ◽

...

Keyword(s):

Domain Structure ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

X Ray ◽

Theoretical Predictions ◽

The Stability ◽

Increasing Temperature ◽

Stable Domains ◽

Domain Stability

ABSTRACTA PbTiO3(001) film grown on MgO(001) by pulsed laser deposition is examined as an example to demonstrate the applications of the domain stability map for epitaxial perovskite films which shows regions of stable domains and fractions of domains in a polydomain structure. X-ray diffraction studies indicate that the film has a …c/a/c/a… domain structure in a temperature range of °C to 400°C with the fraction of c-domains decreasing with increasing temperature. These experimental results are in excellent agreement with theoretical predictions based on the stability map.

Download Full-text

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1025-1026.427 ◽

2014 ◽

Vol 1025-1026 ◽

pp. 427-431

Author(s):

Ping Gao ◽

Wei Zhang ◽

Wei Tian Wang

Keyword(s):

Dielectric Properties ◽

Pulsed Laser ◽

Signal Amplitude ◽

Debye Model ◽

Laser Deposition ◽

X Ray Diffraction ◽

X Ray ◽

Force Microscopy ◽

Atomic Force ◽

Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

Download Full-text

Ti-doped Gallium Phosphide Layers with Concentrations Above the Mott Limit

MRS Proceedings ◽

10.1557/proc-1210-q03-17 ◽

2009 ◽

Vol 1210 ◽

Author(s):

Javier Olea Ariza ◽

David Pastor ◽

María Toledano-Luque ◽

Ignacio Mártil ◽

Germán González-Díaz ◽

...

Keyword(s):

Gallium Phosphide ◽

Vibrational Mode ◽

Pulsed Laser ◽

X Ray Diffraction ◽

Laser Melting ◽

Intermediate Band ◽

X Ray ◽

Tof Sims ◽

Crystalline Domains ◽

Secondary Ion

AbstractWe have studied the Pulsed-Laser Melting (PLM) effects on Ti implanted GaP to form an Intermediate Band (IB). Structural analysis has been carried out by means of Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), Raman spectroscopy and Glancing Incidence X-Ray Diffraction (GIXRD). After the PLM annealing, Ti concentration is over the Mott limit. Nevertheless, the Raman spectra show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding to the GaP unannealed substrate. This conclusion has been corroborated by GIXRD measurements. As a result of the polycrystalline lattice, a drop of the mobility is produced.

Download Full-text

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.123-125.375 ◽

2010 ◽

Vol 123-125 ◽

pp. 375-378 ◽

Cited By ~ 3

Author(s):

Ram Prakash ◽

Shalendra Kumar ◽

Chan Gyu Lee ◽

S.K. Sharma ◽

Marcelo Knobel ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Single Phase ◽

Pulsed Laser ◽

Laser Deposition ◽

Fe Doping ◽

Full Width ◽

Deposition Technique ◽

X Ray Diffraction ◽

X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Download Full-text

X-ray diffraction lineshape analysis of pulsed laser deposited ZnO nano-structured thin films

Applied Surface Science ◽

10.1016/j.apsusc.2018.12.089 ◽

2019 ◽

Vol 473 ◽

pp. 298-302 ◽

Cited By ~ 6

Author(s):

Shatha Kaassamani ◽

Wassim Kassem ◽

Malek Tabbal

Keyword(s):

Thin Films ◽

Pulsed Laser ◽

X Ray Diffraction ◽

X Ray ◽

Lineshape Analysis

Download Full-text

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

MRS Proceedings ◽

10.1557/proc-4-13 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 1

Author(s):

B. C. Larson ◽

C. W. White ◽

T. S. Noggle ◽

J. F. Barhorst ◽

D. Mills

Keyword(s):

Laser Annealing ◽

Pulsed Laser ◽

Temperature Profiles ◽

X Ray Diffraction ◽

Time Resolved ◽

Near Surface ◽

X Ray ◽

Pulsed Laser Annealing ◽

Pulsed Laser Processing ◽

Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

Download Full-text

Control of Crystallinity of Hydroxyapatite Sheet

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.583.47 ◽

2013 ◽

Vol 583 ◽

pp. 47-50 ◽

Cited By ~ 2

Author(s):

Masanobu Kusunoki ◽

Taiyo Matsuda ◽

Naoki Fujita ◽

Yasuhiro Sakoishi ◽

Ryou Iguchi ◽

...

Keyword(s):

Cell Culture ◽

Annealing Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

Free Standing ◽

X Ray ◽

Electric Oven ◽

Diffraction Peaks ◽

Conventional Annealing

A technique to control the crystallinity of hydroxyapatite (HA) was investigated for applications such as dentistry, regenerative medicine, cell culture scaffolding, and bio-sensors. An amorphous HA film was first produced by pulsed laser deposition. After deposition, it was separated from a substrate as a free-standing sheet. Annealing was then performed to control the crystallinity of the sheet. It was found that conventional annealing in an electric oven was not suitable for HA sheets, because it led to curling and cracking. Since such problems were assumed to be caused by thermal stress, annealing was next carried out with the HA sheet enclosed in HA powder in the center of a metal capsule. This method allowed annealing to be successfully carried out without causing any curling or cracking. Uniform pieces with dimensions of 10 mm × 10 mm cut from a large HA sheet were annealed at temperatures of 200 to 800 ºC and then examined using X-ray diffraction. It was found that the intensity of the diffraction peaks associated with crystalline HA changed with annealing temperature, and that the strongest peaks were observed for the sample annealed at 500 ºC. These results indicate that the crystallinity of the HA sheet can be controlled using the proposed method.

Download Full-text

CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

International Journal of Modern Physics B ◽

10.1142/s0217979205028980 ◽

2005 ◽

Vol 19 (01n03) ◽

pp. 533-535

Author(s):

J. H. HAO ◽

J. GAO

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Perovskite Oxide ◽

Deposition Technique ◽

X Ray Diffraction ◽

Rocking Curve ◽

X Ray ◽

Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

Download Full-text