Open Resonator Technique for Measurement of Thin Dielectric Film Properties on Optically Dense Substrates

2000 ◽  
Vol 631 ◽  
Author(s):  
Sergey Dudorov ◽  
Dmitri Lioubtchenko ◽  
Juha Mallat ◽  
Jussi Tuovinen ◽  
Antti V. Räisänen
Keyword(s):  
Dielectric Film ◽  
Open Resonator ◽  
Dielectric Substrate ◽  
Dielectric Films ◽  
Film Properties ◽  
Thin Dielectric Film ◽  
Direct Measurements ◽  
Device Applications ◽  
Thin Dielectric Films ◽  
Good Agreement

ABSTRACTThin dielectric films on the dielectric substrate are widely employed in millimeter and submillimeter wave device applications, so the problem of precise measurement of their properties is important. One of the most accurate technique for measurement of dielectric properties is the open resonator technique.In this work we propose the method for measurements of thin dielectric film properties on the dielectric substrate using the open semispherical resonator. A good agreement (within 1 %) was obtained in refractive index data between results obtained with direct measurements and with proposed method for thin layer of SI GaAs on a sapphire substrate.

In‐Situ Measurements of Thermal Properties of Dielectric Films on Metal‐Dielectric‐Substrate Structures

1996 ◽  
Vol 445 ◽  
Author(s):  
P. Bloss ◽  
A.S. De Reggi ◽  
H. Schäfer
Keyword(s):  
Thermal Properties ◽  
Temperature Profile ◽  
Dielectric Film ◽  
Regularization Parameter ◽  
Laser Pulses ◽  
Dielectric Substrate ◽  
Dielectric Films ◽  
Thermal Mass ◽  
Metallic Electrode ◽  
Substrate Structure

AbstractWe show that the thermal diffusivity of a dielectric film and the heat‐transfer coefficient between the film and the substrate to which it is adhesively bonded can be determined from the electret‐like response stimulated by laser pulses applied to the voltage‐biased dielectric. The temperature profile is calculated as a function of time from the heat‐conduction equation with boundary conditions appropriate for the model structure representing the metallic electrode/ dielectric film/ glue layer/ substrate structure. The electrode, acting as a thermal mass, and the substrate, acting as a thermal sink, affect the temperature profile in different time ranges.The response is a convolution of the temperature and the electric‐field profiles across the dielectric. For nonideal dielectrics that acquire bulk charge under bias, deconvolution is necesssary to determine the field profile and the thermal properties. Deconvolution is accomplished using the Tikhonov‐regularization technique with a self‐consistent regularization parameter. This procedure yields information about the thermal properties of both the dielectric and the glue joint, as shown by actual measurements.

ECR Plasma Deposition of Dielectrics for Optoelectronic Applications

1989 ◽  
Vol 165 ◽  
Author(s):  
Steven Dzioba
Keyword(s):  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Plasma Source ◽  
Optoelectronic Device ◽  
Dielectric Films ◽  
Film Properties ◽  
Ecr Plasma ◽  
Device Applications ◽  
Inp Substrates

A UHV electron cyclotron resonance (ECR) plasma source has been used to deposit SiNx, SiOxNy and amorphous Si thin films on InP substrates for optoelectronic device applications. High quality dielectric films can be deposited at temperatures significantly lower than conventional techniques, namely less than 110°C. Selected applications pertinent to optoelectronic devices are used to establish the role of ion/electron fluxes in thin film properties.

scholarly journals Характеризация свойств пленок титаната бария-стронция и управляемых элементов на их основе в диапазоне частот 1-60 GHz

2019 ◽  
Vol 45 (11) ◽  
pp. 12
Author(s):  
А.Г. Алтынников ◽  
А.Г. Гагарин ◽  
А.В. Тумаркин ◽  
И.В. Котельников
Keyword(s):  
Barium Strontium Titanate ◽  
Open Resonator ◽  
Wide Frequency Range ◽  
60 Ghz ◽  
Frequency Range ◽  
Film Properties ◽  
Millimeter Wavelength ◽  
Tunable Capacitors ◽  
Barium Strontium ◽  
Direct Measurements

The electrical properties of the tunable capacitors based on the barium-strontium titanate films and the films itself were investigated in a wide frequency range. The dielectric losses of ferroelectric films at frequencies up to 30 GHz were estimated based on the parameters of capacitors. The measurements were performed using the set of resonance techniques. Direct measurements of the film properties were carried out at a frequency of 60 GHz using the open resonator technique. The parameters of the capacitors were compared with semiconductor analogs to demonstrate the prospects of thin-film ferroelectric elements application in the millimeter wavelength range.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

scholarly journals Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Andrey A. Pil’nik ◽  
Andrey A. Chernov ◽  
Damir R. Islamov
Keyword(s):  
Charge Transport ◽  
Thin Layers ◽  
Jump Processes ◽  
Dielectric Films ◽  
Algebraic Equations ◽  
Markov Jump ◽  
Statistical Solution ◽  
Linear Algebraic Equations ◽  
Special Cases ◽  
Thin Dielectric Films

AbstractIn this study, we developed a discrete theory of the charge transport in thin dielectric films by trapped electrons or holes, that is applicable both for the case of countable and a large number of traps. It was shown that Shockley–Read–Hall-like transport equations, which describe the 1D transport through dielectric layers, might incorrectly describe the charge flow through ultra-thin layers with a countable number of traps, taking into account the injection from and extraction to electrodes (contacts). A comparison with other theoretical models shows a good agreement. The developed model can be applied to one-, two- and three-dimensional systems. The model, formulated in a system of linear algebraic equations, can be implemented in the computational code using different optimized libraries. We demonstrated that analytical solutions can be found for stationary cases for any trap distribution and for the dynamics of system evolution for special cases. These solutions can be used to test the code and for studying the charge transport properties of thin dielectric films.

Local range order in thin dielectric films of gallium phosphate

1996 ◽  
Vol 279 (1-2) ◽  
pp. 59-65 ◽  
Author(s):  
F. Tourtin ◽  
A. Ibanez ◽  
A. Haidoux ◽  
E. Philippot
Keyword(s):  
Range Order ◽  
Dielectric Films ◽  
Local Range ◽  
Thin Dielectric Films ◽  
Gallium Phosphate
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