In Segregation Effects on Optical and Doping Properties of InAlGaN Quaternary for UV Emitting Devices

2000 ◽  
Vol 639 ◽  
Author(s):  
Hideki Hirayama ◽  
Atsuhiro Kinoshita ◽  
Takuya Yamanaka ◽  
Akira Hirata ◽  
Yoshinobu Aoyagi
Keyword(s):  
Room Temperature ◽  
Hole Concentration ◽  
Single Quantum Well ◽  
Al Content ◽  
Organic Vapor ◽  
Band Emission ◽  
Uv Emission ◽  
Micron Size ◽  
Metal Organic ◽  
High Al Content

ABSTRACTWe demonstrate room temperature intense ultraviolet (UV) emission wavelength ranging 300- 340 nm from InxAlyGa1-x-yN quaternary alloys grown by metal-organic vapor-phase-epitaxy (MOVPE). We found that the UV emission is drastically enhanced by introducing several percent of In into AlGaN. We fabricated single quantum well (SQW) consisting of InxAlyGa1-x-yN quaternary well and barrier, and clearly observed In segregation of sub-micron size from a cathode luminescence (CL) images. The intensity of 320nm-band emission from InAlGaN/InAlGaN QWs were as strong as those of 410nm-band emission from InGaN based QWs, at room temperature. The temperature dependence of photoluminescence (PL) emission for InAlGaN based QWs were much improved in comparison with GaN or AlGaN based QWs. We also grew Mg-doped InxAlyGa1-x-yN quaternary, and obtained hole concentration of 3×1017cm−3 by Hall measurement for high Al content (more than 50%) InxAlyGa1-x-yN quaternary.

scholarly journals Optical Properties of AlGaN Quantum Well Structures

2000 ◽  
Vol 5 (S1) ◽  
pp. 696-702 ◽  
Author(s):  
Hideki Hirayama ◽  
Yasushi Enomoto ◽  
Atsuhiro Kinoshita ◽  
Akira Hirata ◽  
Yoshinobu Aoyagi
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Wide Bandgap ◽  
Near Band Edge ◽  
Quantum Well Structures ◽  
Al Content ◽  
Organic Vapor ◽  
Metal Organic ◽  
Pl Emission ◽  
High Al Content

We demonstrate 230-250 nm efficient ultraviolet (UV) photoluminescence (PL) from AlN(AlGaN)/AlGaN multi-quantum-wells (MQWs) fabricated by metal-organic vapor-phase-epitaxy (MOVPE). Firstly, we show the PL properties of high Al content AlGaN bulk (Al content: 85-95%) emitting from near band-edge. We systematically investigated the PL properties of AlGaN-MQWs consisting of wide bandgap AlGaN (Al content: 53-100%) barrier. We obtained efficient PL emission of 234 and 245 nm from AlN/Al0.18Ga0.82N and Al0.8Ga0.2N/Al0.18Ga0.82N MQWs, respectively, at 77 K. The optimum value of well thickness was approximately 1.5 nm. The emission from the AlGaN MQWs were several tens of times stronger than that of bulk AlGaN. We found that the most efficient PL is obtained at around 240 nm from AlGaN MQWs with Al0.8Ga0.2N barriers. Also, we found that the PL from AlGaN MQW is as efficient as that of InGaN QWs at 77 K.

Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 23 (12) ◽  
pp. 774-776 ◽  
Author(s):  
A B Krysa ◽  
D G Revin ◽  
J P Commin ◽  
C N Atkins ◽  
K Kennedy ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Room Temperature ◽  
Quantum Cascade Lasers ◽  
Vapor Phase Epitaxy ◽  
Quantum Cascade ◽  
Organic Vapor ◽  
Metal Organic ◽  
Cascade Lasers

Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

2009 ◽  
Vol 1198 ◽  
Author(s):  
Neeraj Nepal ◽  
M. Oliver Luen ◽  
Pavel Frajtag ◽  
John Zavada ◽  
Salah M. Bedair ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
Organic Chemical ◽  
Ferromagnetic Behavior ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
P Type ◽  
Organic Chemical Vapor Deposition

AbstractWe report on metal organic chemical vapor deposition growth of GaMnN/p-GaN/n-GaN multilayer structures and manipulation of room temperature (RT) ferromagnetism (FM) in a GaMnN layer. The GaMnN layer was grown on top of a n-GaN substrate and found to be almost always paramagnetic. However, when grown on a p-type GaN layer, a strong saturation magnetization (Ms) was observed. Ms was almost doubled after annealing demonstrating that the FM observed in GaMnN film is carrier-mediated. To control the hole concentration of the p-GaN layer by depletion, GaMnN/p-GaN/n-GaN multilayer structures of different p-GaN thickness (Xp) were grown on sapphire substrates. We have demonstrated that the FM depends on the Xp and the applied bias to the GaN p-n junction. The FM of these multilayer is independent on the top GaMnN layer thickness (tGaMnN) for tGaMnN >200 nm and decreases for tGaMnN < 200 nm. Thus the room temperature FM of GaMnN i-p-n structure can also be controlled by changing Xp and tGaMnN in the GaMnN i-p-n structures.

Current Injection UV-Emission from InAlGaN Multi-Quantum-Well Light-Emitting Diodes

2000 ◽  
Vol 639 ◽  
Author(s):  
A. Kinoshita ◽  
H. Hirayama ◽  
M. Ainoya ◽  
J. S. Kim ◽  
A. Hirata ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Current Injection ◽  
Light Emitting ◽  
Organic Vapor ◽  
Uv Emission ◽  
Metal Organic ◽  
Uv Leds ◽  
Multi Quantum Well

ABSTRACTInAlGaN quaternary material is very attractive for realizing ultraviolet (UV) emitting devices working at 300 – 350 nm wavelength range. We demonstrate current injection into 340 nm-band InAlGaN based UV light emitting diodes (LEDs), for the first time, fabricated by metal organic vapor phase epitaxy (MOVPE). We performed current injection into AlGaN/AlGaN multi quantum well (MQW), bulk InAlGaN quaternary and InAlGaN/InAlGaN MQW LEDs through Mg-doped AlGaN/GaN superlattice hole conductive layers. The injected current density was ranging 0 – 0.5 kA/cm2 under pulsed or CW operation. The intensity of both photoluminescence (PL) and electroluminescence for InAlGaN quaternary-based LED was much higher than that for AlGaN based LEDs at room temperature. From these results InAlGaN quaternary-based QWs are expected to realize high intensity UV LEDs and LDs.

Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy

2006 ◽  
Vol 88 (13) ◽  
pp. 132102 ◽  
Author(s):  
K. D. Moiseev ◽  
E. V. Ivanov ◽  
G. G. Zegrya ◽  
M. P. Mikhailova ◽  
Yu. P. Yakovlev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Room Temperature ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Efficient Acceptor Activation in AlxGa1−xN/GaN Doped Superlattices

2000 ◽  
Vol 5 (S1) ◽  
pp. 329-335
Author(s):  
I. D. Goepfert ◽  
E. F. Schubert ◽  
A. Osinsky ◽  
P. E. Norris
Keyword(s):  
Mole Fraction ◽  
Room Temperature ◽  
Hole Concentration ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Free Hole ◽  
Al Content ◽  
Hall Effect Measurements ◽  
Superlattice Structures ◽  
Mg Doped

Mg-doped superlattices consisting of uniformly doped AlxGa1−xN and GaN layers are analyzed by Hall-effect measurements. Acceptor activation energies of 70 meV and 58 meV are obtained for superlattice structures with an Al mole fraction of x = 0.10 and 0.20 in the barrier layers, respectively. These energies are significantly lower than the activation energy measured for Mg-doped GaN thin films. At room temperature, the doped superlattices have free hole concentrations of 2 × 1018 cm−3 and 4 × 1018 cm−3 for x = 0.10 and 0.20, respectively. The increase in hole concentration with Al content of the superlattice is consistent with theory. The room temperature conductivity measured for the superlattice structures are 0.27 S/cm and 0.64 S/cm for an Al mole fraction of x = 0.10 and 0.20, respectively.

MOVPE of m-plane InGaN/GaN Buffer and LED Structures on γ-LiAlO2

2008 ◽  
Vol 1068 ◽  
Author(s):  
H. Behmenburg ◽  
C. Mauder ◽  
L. Rahimzadeh Khoshroo ◽  
T.C. Wen ◽  
Y. Dikme ◽  
...  
Keyword(s):  
Electric Fields ◽  
Vapor Phase ◽  
Room Temperature ◽  
Single Phase ◽  
Degree Of Polarization ◽  
Quantum Well Structures ◽  
Room Temperature Photoluminescence ◽  
Organic Vapor ◽  
Metal Organic ◽  
High Degree

ABSTRACTWe report on deposition and properties of m-plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapor phase epitaxy (MOVPE). At first, two different buffer structures, one of them including an m-plane AlInN interlayer, were investigated concerning their suitability for the subsequent coalesced single-phase m-plane GaN growth. A series of quantum well structures with different well thickness based on one of these buffers showed absence of polarization-induced electric fields verified by room temperature photoluminescence (RT PL) measurements at different excitation intensities. Furthermore, polarization-resolved PL measurements revealed a high degree of polarization (DoP) of the emitted light with an intensity ratio of 8:1 between light polarized perpendicular and parallel to the c-axis.

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