scholarly journals STM characterization of Cu thin films grown by direct ion deposition

2000 ◽  
Vol 648 ◽  
Author(s):  
Joshua M. Pomeroy ◽  
Aaron Couture ◽  
Joachim Jacobsen ◽  
Colin C. Hill ◽  
James P. Sethna ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Kinetic Monte Carlo ◽  
Scanning Tunneling ◽  
Metal Thin Films ◽  
Precise Control ◽  
Beneficial Effects ◽  
Insertion Mechanism ◽  
Analysis System ◽  
Ion Deposition

AbstractIn certain cases, the incidence energy of constituent atoms activates an atomistic insertion mechanism, which decreases the surface roughness of metal thin films. In an effort to probe this effect, homoepitaxial copper films were grown using a mass/energy selected direct ion deposition technique that allows precise control of the incidence energy. Surface roughness is measured using a Scanning Tunneling Microscope (STM) within the same UHV surface analysis system. The activation of the insertion mechanism near 20 eV triggers smoother crystal growth. The beneficial effects begin to be obscured by adatom/vacancy creation near 30 eV. A sophisticated Kinetic Monte Carlo/Molecular Dynamics (KMC-MD) model supports this interpretation.

STM investigation of energetic insertion during direct ion deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
Joshua M. Pomeroy ◽  
Aaron Couture ◽  
Joachim Jacobsen ◽  
Barbara H. Cooper ◽  
J.P. Sethna ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Low Temperatures ◽  
Md Simulation ◽  
Kinetic Monte Carlo ◽  
Scanning Tunneling ◽  
Surface Films ◽  
Copper Films ◽  
Tunneling Microscope ◽  
Precise Control ◽  
Ion Deposition

ABSTRACTThin copper films have been deposited on single crystal copper substrates and characterized using a UHV Scanning Tunneling Microscope to probe the effect of atomic insertions during hyperthermal ion deposition. At low temperatures, atomic insertions are predicted to provide a net downhill current that offsets the roughening effect due to uphill “Schwoebel” currents leading to a net smoothing of the surface. Films have been grown at several different energies targeted to observe a crossover from insertion driven smoothing to adatom-vacancy dominated roughening. Copper thin films are deposited near 20 eV using a mass selected ion deposition system that allows precise control (+/− 2 eV) over the energy of constituent atoms. Experimental observations are compared with a sophisticated Kinetic Monte Carlo and Molecular Dynamics hybrid (KMC-MD) simulation.

Investigation of Metal Peeling Failure of Ti/Ni/Ag Metal Thin Films on Silicon Wafers

2014 ◽  
Vol 915-916 ◽  
pp. 847-850
Author(s):  
Yun Feng Wang ◽  
Hai Yang Chen ◽  
Biao Zhang ◽  
Wen Bin Liu ◽  
Xiao Jie Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Failure Analysis ◽  
Wafer Surface ◽  
Grinding Process ◽  
Metal Thin Films ◽  
Root Cause ◽  
Edax Analysis ◽  
High Uniformity ◽  
Ag Film

In this paper, failure analysis was conducted to investigate the root cause of Ti/Ni/Ag film peeling from silicon wafer surface. SEM and Edax analysis revealed that peeling was found at Ti/Si interface, and no contamination elements, such as C, H, O, were existed. VK Analyzer was used to measure the surface roughness, and the results revealed that the peeling failure was due to the low surface roughness resulted from excessive polishing after wafer back grinding process. Experiments for changing rabbling polishing method for bubbling polishing one were done expecting to realize high uniformity of surface roughness, and the results showed that roughness uniformity was greatly improved, and no peeling metal was left on the blue tape.

MEASUREMENT OF CRITICAL EXPONENTS OF PLATINUM THIN FILMS

2003 ◽  
Vol 10 (01) ◽  
pp. 1-5 ◽  
Author(s):  
M. C. SALVADORI ◽  
L. L. MELO ◽  
M. CATTANI ◽  
O. R. MONTEIRO ◽  
I. G. BROWN
Keyword(s):  
Thin Films ◽  
Critical Exponents ◽  
Scanning Tunneling Microscope ◽  
Growth Dynamics ◽  
Scanning Tunneling ◽  
Silicon Substrates ◽  
Tunneling Microscope ◽  
Metal Plasma ◽  
Ion Deposition

We have fabricated platinum thin films by metal plasma ion deposition on silicon substrates. The roughness of these films has been measured by a scanning tunneling microscope (STM) and we have determined the growth dynamics critical exponents.

scholarly journals Structure and morphology of nano-sized W-Ti/Si thin films

2006 ◽  
Vol 71 (8-9) ◽  
pp. 969-976 ◽  
Author(s):  
Suzana Petrovic ◽  
Borivoje Adnadjevic ◽  
Davor Perusko ◽  
Nada Popovic ◽  
Nenad Bundaleski ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Phase Composition ◽  
Surface Segregation ◽  
Morphological Characteristics ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Thin films were deposited by d.c. sputtering onto a silicon substrate. The influence of the W-Ti thin film thickness to its structural and morphological characteristics of a nano-scale were studied. The phase composition and grain size were studied by X-ray diffraction (XRD), while the surface morphology and surface roughness were determined by scanning tunneling microscopy (STM). The analysis of the phase composition show that the thin films had a polycrystalline structure - they were composed of a b.c.c. W phase with the presence of a h.c.p. Ti phase. The XRD peak in the scattering angle interval of 38?-43? was interpreted as an overlap of peaks corresponding to the W(110) and Ti(101) planes. The grain size and the mean surface roughness both increase with the thikness of the thin film. The chemical composition of the thin film surface was also analyzed by low energy ions scattering (LEIS). The results show the surface segregation of titanium, as well as a substantial presence of oxygen an the surface.

scholarly journals A Parametric Three-Dimensional Phase-Field Study of the Physical Vapor Deposition Process of Metal Thin Films Aiming at Quantitative Simulations

Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 607 ◽  
Author(s):  
Shenglan Yang ◽  
Jing Zhong ◽  
Miao Chen ◽  
Lijun Zhang
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Phase Field ◽  
Physical Vapor Deposition ◽  
Three Dimensional ◽  
Quantitative Relationship ◽  
Deposition Process ◽  
Model Parameters ◽  
Metal Thin Films

In this paper, a parametric three-dimensional (3D) phase-field study of the physical vapor deposition process of metal thin films was performed aiming at quantitative simulations. The effect of deposition rate and model parameters on the microstructure of deposited thin films was investigated based on more than 200 sets of 3D phase-field simulations, and a quantitative relationship between the deposition rate and model parameters was established. After that, the heat maps corresponding to the experimental atomic force microscopy images were plotted for characterization of the surface roughness. Different roughness parameters including the arithmetic average roughness (Ra), root mean square roughness (Rq), skewness (Rsk), and kurtosis (Rku), as well as the ratio of Rq to Ra were calculated and carefully analyzed. A quantitative relationship between the surface roughness and the deposition rate and model parameters was obtained. Moreover, the calculated Rq to Ra ratios for the thin films at the deposition rates of 0.22 and 1.0 nm s−1 agreed very well with the experimental data of the deposited Mo and Ti thin films. Finally, further discussion about the correlative behaviors between the surface roughness and the density was proposed for reasoning the shadowing effect as well as the formation of voids during the thin film production.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

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