On the Evolution of Surface Morphology of Polysilicon Mems Structures During Fatigue

2000 ◽  
Vol 657 ◽  
Author(s):  
S. M. Allameh ◽  
B. Gally ◽  
S. Brown ◽  
W.O. Soboyejo

ABSTRACTThis paper presents the results of an atomic force microscopy (AFM) study of the evolution of surface topology in notched polysilicon MEMS structures deformed under cyclic loading at room temperature. The in-situ and ex-situ AFM studies reveal changes in surface topology after cyclic actuation at a relative humidity of ∼70%. These lead ultimately to large wavelength modulations close to the bottom of the notch, in the areas where the tensile stresses are maximum. This is in contrast with the wavelength of the surface modulations away from the notch, which remain relatively unchanged. The results are discussed in terms of possible chemical/surface processes that can occur in the presence of water vapor.

Author(s):  
Pengcheng Chen ◽  
Jordan N. Metz ◽  
Adam S. Gross ◽  
Stuart E. Smith ◽  
Steven P. Rucker ◽  
...  

1995 ◽  
Vol 353 (5-8) ◽  
pp. 670-674
Author(s):  
T. Prohaska ◽  
G. Friedbacher ◽  
M. Grasserbauer ◽  
H. Nickel ◽  
R. L�sch ◽  
...  

2010 ◽  
Vol 5 (3) ◽  
pp. 274-277
Author(s):  
Suharso Suharso

The surface topology of borax crystals grown at a relative supersaturation of 0.21 has been investigated using ex situ atomic force microscopy (AFM). It was found that the cleavage of borax crystals along the (010) face planes has features of the cleavage of layered compounds, exhibiting cleavage steps of low heights. The step heights of the cleavage of the (010) face of borax crystal are from one unit cell to three unit cells of this face.   Keywords: AFM, cleavage, borax.


1994 ◽  
Vol 299 ◽  
Author(s):  
Patricia B. Smith

AbstractDry passivation of HgCdTe with ZnS or CdTe using physical or chemical vapor deposition can be improved by incorporating an in situ plasma cleanup of the HgCdTe surface prior to the deposition. Contamination at the HgCdTe/ dielectric interface from ambient oxide and hydrocarbon residues may lead to fixed charge in capacitor or diode device structures. In addition, the oxides of HgCdTe are known to be thermally unstable. Removal of the surface contamination layer is advantageous for producing a consistent and electrically reliable interface. We describe the interaction of a remotely generated H2 or H2/Ar plasma (2.45 GHz, 600W) with HgCdTe, using ex-situ and in-situ ellipsometry, and atomic force microscopy. This work represents the first effort to characterize a low damage HgCdTe surface cleanup process which is compatible with vacuum in-situ passivation.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Mark Aarts ◽  
Stefan van Vliet ◽  
Roland Bliem ◽  
Esther Alarcon-Llado

In situ and ex situ atomic force microscopy was used to investigate crystal growth in copper electro-crystallization localized and directed by a moving nanoelectrode in close proximity to a gold substrate in a highly dilute electrolyte.


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