Synergistic effect by Na doping and S substitution for high thermoelectric performance of p-type MnTe

2017 ◽  
Vol 5 (21) ◽  
pp. 5076-5082 ◽  
Author(s):  
Yangyang Ren ◽  
Junyou Yang ◽  
Qinghui Jiang ◽  
Dan Zhang ◽  
Zhiwei Zhou ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Synergistic Effect ◽  
Band Gap ◽  
Room Temperature ◽  
Hole Concentration ◽  
Direct Band Gap ◽  
Na Doping ◽  
Type Semiconductor ◽  
Direct Band ◽  
P Type

Pristine MnTe is a p-type semiconductor with a relatively low hole concentration of 1018 cm−3, low electrical conductivity, and thus poor TE performance at room temperature owing to the broad direct band gap of 1.27 eV.

Wurtzite CoO: a direct band gap oxide suitable for a photovoltaic absorber

2018 ◽  
Vol 54 (99) ◽  
pp. 13949-13952 ◽  
Author(s):  
Y. Wang ◽  
H. X. Ge ◽  
Y. P. Chen ◽  
X. Y. Meng ◽  
J. Ghanbaja ◽  
...  
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Type Semiconductor ◽  
Direct Band ◽  
P Type

Wurtzite CoO is a p-type semiconductor with a direct band gap of 1.6 eV and an intense sub-gap absorption.

Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

2016 ◽  
Vol 602 ◽  
pp. 43-47 ◽  
Author(s):  
Dong Wang ◽  
Takayuki Maekura ◽  
Keisuke Yamamoto ◽  
Hiroshi Nakashima
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Light Emission ◽  
Direct Band Gap ◽  
Direct Band

Electronic State and Piezoresistivity Analysis of Zinc Oxide Nanowires for Force Sensing Devices

2015 ◽  
Vol 644 ◽  
pp. 16-21 ◽  
Author(s):  
Koichi Nakamura
Keyword(s):  
Band Gap ◽  
Compressive Strain ◽  
Force Sensing ◽  
Wall Structure ◽  
Direct Band Gap ◽  
Direct Band ◽  
The Difference ◽  
Piezoresistance Coefficient ◽  
Indirect Band Gap ◽  
P Type

The piezoresistivity for force sensing in wurtzite-ZnO nanowires with [0001] orientation has been simulated on the basis of the first-principles calculations of model structures. According to the difference in wall structure, our devised nanowire models can be divided into three groups by their conductivities; no band-gap conducting models, direct band-gap semiconducting models, and indirect band-gap semiconducting models. The strain responses to carrier conductivity of n-or p-doped semiconducting wurtzite-ZnO[0001] nanowire models were calculated using band carrier densities and their corresponding effective masses derived from the one-dimensional band diagram by our original procedure for a small amount of carrier occupation. The conductivities of p-type direct band-gap models change drastically due to longitudinal uniaxial strain in the simulation: the longitudinal piezoresistance coefficient is 120 × 10–11 Pa–1 for p-type (ZnO)24 nanowire model with 1% compressive strain at room temperature.

Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

2017 ◽  
Vol 56 (3) ◽  
pp. 032102 ◽  
Author(s):  
Kazuki Tani ◽  
Shin-ichi Saito ◽  
Katsuya Oda ◽  
Makoto Miura ◽  
Yuki Wakayama ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Direct Band Gap ◽  
Direct Band

scholarly journals Indium Sulfide and Ternary In-S-O Nanowires for Optoelectronic Applications

2012 ◽  
Vol 18 (S5) ◽  
pp. 121-122 ◽  
Author(s):  
J. Bartolomé ◽  
D. Maestre ◽  
A. Cremades ◽  
J. Piqueras
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Material Properties ◽  
Room Temperature ◽  
High Efficiency ◽  
Processing Parameters ◽  
Indium Sulfide ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications

Indium sulfide (In2S3) is a promising semiconductor material for window layers in solar cell devices and other optoelectronic applications as it presents a direct band gap around 2.0 eV at room temperature, and large photosensitivity and photoconductivity. The presence of several polymorphic structures depending on the processing parameters is also of interest to tailor the required material properties for different applications. It is currently being investigated for high efficiency solar cell based on CuInS2-In2S3 heterostructures, replacing CdS layers. Few studies have been reported on nanostructured In2S3 grown by several methods.

Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

2016 ◽  
Vol 27 (43) ◽  
pp. 435204 ◽  
Author(s):  
Ajit K Katiyar ◽  
Andreas Grimm ◽  
R Bar ◽  
Jan Schmidt ◽  
Tobias Wietler ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Emission Characteristics ◽  
Direct Band Gap ◽  
Direct Band

Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure

2015 ◽  
Vol 106 (7) ◽  
pp. 071102 ◽  
Author(s):  
Dong Wang ◽  
Takayuki Maekura ◽  
Sho Kamezawa ◽  
Keisuke Yamamoto ◽  
Hiroshi Nakashima
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Metal Structure ◽  
Direct Band Gap ◽  
Direct Band

A New p-Type Conductive Oxide with Wide Band GAP, SrCu2O2

1998 ◽  
Vol 526 ◽  
Author(s):  
A. Kudo ◽  
H. Yanagi ◽  
H. Hosono ◽  
H. Kawazoe
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Near Infrared ◽  
Hole Concentration ◽  
Wide Band ◽  
Positive Sign ◽  
Hole Doping ◽  
Glass Substrates ◽  
Dc Electrical Conductivity ◽  
P Type

AbstractSrCu2O2 thin films were prepared onto SiO2 glass substrates by pulsed laser deposition. The film deposited in O2 atmosphere of 7×10-4 Pa at 573 K showed high optical transmission in visible and near infrared regions. The optical band gap of the film was estimated to be -3.3 eV. The dc electrical conductivity of the film was 3.8 × 10-3 Scm-1. Potassium was used for substitutional hole-doping. The dc electrical conductivity of the K-doped film at 300 K increased to 4.8 × 10-2 Scm-1. Positive sign of Seebeck and Hall coefficients demonstrated p-type conduction of the K-doped film. Hole concentration and mobility at 300 K were 6.1 × 1017 cm-3 and 0.46 cm2V-1s-1, respectively.

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