scholarly journals Fabrication of Cu2O Nanostructured Thin Film by Anodizing

2018 ◽  
Vol 36 (2) ◽  
pp. 209-216 ◽  
Author(s):  
C.H. Voon ◽  
B.Y. Lim ◽  
S.C.B. Gopinath ◽  
Y. Al-Douri ◽  
K.L. Foo ◽  
...  
Keyword(s):  
Thin Film ◽  
Visible Region ◽  
X Ray Diffraction ◽  
Nanostructured Thin Film ◽  
Narrow Bandgap ◽  
Type Semiconductor ◽  
High Absorption Coefficient ◽  
P Type ◽  
O Phase ◽  
High Absorption

Abstract Cuprous oxide, a narrow bandgap p-type semiconductor, has been known as a potential material for applications in supercapacitors, hydrogen production, sensors, and energy conversion due to its properties such as non-toxicity, easy availability, cost effectiveness, high absorption coefficient in the visible region and large minority carriers diffusion length. In this study, Cu2O nanostructured thin film was fabricated by anodizing of Cu plates in ethylene glycol containing 0.15 M KOH, 0.1 M NH4F and 3 wt.% deionized water. The effects of anodizing voltage and temperature of electrolyte were investigated and reported. It was found that nanoporous Cu2O thin film was formed when anodizing voltages of 50 V and 70 V were used while a dense Cu2O thin film was formed due to the aggregation of smaller nanoparticles when 30 V anodizing voltage was used. Nanoplatelets thin film was formed when the temperature of electrolyte was reduced to 15 °C and 5 °C. X-ray diffraction confirmed the presence of Cu2O phase in thin film formed during anodizing of Cu plates, regardless of the anodizing voltage and temperature of electrolyte. Photoluminescence spectroscopy showed the presence of Cu2O peak at 630 nm corresponding to band gap of 1.97 eV. A mechanism of the formation of Cu2O thin film was proposed. This study reported the ease of tailoring Cu2O nanostructures of different morphologies using anodizing that may help widen the applications of this material

scholarly journals Elaboration and Characterization of SnS Thin Film for Gas Sensors Application

Proceedings ◽  
2019 ◽  
Vol 14 (1) ◽  
pp. 4
Author(s):  
Youssef Nouri ◽  
Bouchaib Hartiti ◽  
Abdelkrim Batan ◽  
François Reniers ◽  
Claudine Buess-Herman ◽  
...  
Keyword(s):  
Thin Film ◽  
Absorption Coefficient ◽  
Gas Sensors ◽  
Tin Sulfide ◽  
Type Conductivity ◽  
High Absorption Coefficient ◽  
P Type ◽  
High Absorption

The tin sulfide (SnS) has p-type conductivity, high absorption coefficient (≥104 cm−1), […]

scholarly journals Synthesis and Electrical Studies of Quaternary Chalcogenide Semiconductor Cu2ZnSnSe4

2016 ◽  
Vol 846 ◽  
pp. 383-387
Author(s):  
Leong Yong Jian ◽  
Josephine Liew Ying Chyi ◽  
Zainal Abidin Talib ◽  
W. Wahmood Wan Yunus ◽  
Fakhrurrazi Ashari ◽  
...  
Keyword(s):  
Solar Cells ◽  
Absorber Layer ◽  
Chalcogenide Semiconductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chloride Dihydrate ◽  
Type Semiconductor ◽  
Copper Zinc ◽  
High Absorption Coefficient ◽  
P Type

Quaternary chalcogenide semiconductor has attracted much attention as absorber-layer materials in solar cells. The absorber-layer material, Cu2ZnSnSe4 (CZTSe) which is a p-type semiconductor that has high absorption coefficient, had been synthesized by using solvothermal method. The variation of concentrations of the Copper (II) Chloride dihydrate have brought some effects towards producing the stoichiometry and non-stoichiometry copper zinc tin selenide that may lead to the improvement of efficiency of solar cells. The synthesized reaction was conducted at 250°C for 24 hours. Properties of the samples have been characterized by X-ray diffraction (XRD) to determine the crystal structure of the sample and X-ray Fluorescence (XRF) to determine the elemental composition of the sample. The electrical properties such as resistance and conductivity have been studied through Van der Pauw configuration. The CZTSe has been successfully synthesized at concentrations of 0.15 M with no impurities phases existed.

Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

Growth of Rutile TiO2 Nanorods by Chemical Bath Deposition Method on Silicon Substrate at Different Annealing Temperature

2014 ◽  
Vol 624 ◽  
pp. 129-133 ◽  
Author(s):  
Abbas M. Selman ◽  
Zainuriah Hassan
Keyword(s):  
Optical Properties ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Annealing Treatment ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
Uv Emission ◽  
Cbd Method ◽  
P Type

Effects of annealing treatment on growth of rutile TiO2nanorods on structural, morphological and optical properties of TiO2nanorods were investigated. The nanorods were fabricated on p-type (111)-oriented silicon substrates and, all substrates were seeded with a TiO2seed layer synthesized by radio-frequency reactive magnetron sputtering system. Chemical bath deposition (CBD) was carried out to grow rutile TiO2nanorods on Si substrate at different annealing temperatures (350, 550, 750, and 950 °C). Raman spectroscopy, X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analyses showed the tetragonal rutile structure of the synthesized TiO2nanorods. Optical properties were examined by photoluminescence spectroscopy. The spectra exhibit one strong UV emission peak which can be seen at around 390 nm for all of the samples. In the visible region, TiO2demonstrated two dominant PL emissions centered at around 519 and 705 nm. The experimental results showed that the TiO2nanorods annealed at 550 °C exhibited the optimal structural properties. Moreover, the CBD method enabled the formation of photosensitive, high-quality rutile TiO2nanorods with few defects for future optoelectronic nanodevice applications.

An investigation of physical properties and photovoltaic performance of methylammonium lead-tin iodide (CH3NH3Sn1-xPbxI3) solar cells

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Omid Malekan ◽  
Mehdi Adelifard ◽  
Mohamad Mehdi Bagheri Mohagheghi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
X Ray Diffraction ◽  
Content Type ◽  
X Ray ◽  
High Absorption Coefficient ◽  
High Absorption

Purpose In the past several years, CH3NH3PbI3 perovskite material has been extensively evaluated as an absorber layer of perovskite solar cells due to its excellent structural and optical properties, and greater than 22% conversion efficiency. However, improvement and future commercialization of solar cells based on CH3NH3PbI3 encountered restrictions due to toxicity and instability of the lead element. Recently, studies on properties of lead-free and mixture of lead with other cations perovskite thin films as light absorber materials have been reported. The purpose of this paper was the fabrication of CH3NH3Sn1-xPbxI3 thin films with different SnI2 concentrations in ambient condition, and study on the structural, morphological, optical, and photovoltaic performance of the studied solar cells. The X-ray diffraction studies revealed the formation of both CH3NH3PbI3 and CH3NH3SnI3 phases with increasing the Sn concentration, and improvement in crystallinity and morphology was also observed. All perovskite layers had a relatively high absorption coefficient >104 cm−1 in the visible wavelengths, and the bandgap values varied in the range from 1.46 to 1.63 eV. Perovskite solar cells based on these thin films have been fabricated, and device performance was investigated. Results showed that photo-conversion efficiency (PCE) for the pure CH3NH3PbI3sample was 1.20%. With adding SnI2, PCE was increased to 4.48%. Design/methodology/approach In this work, the author mixed tin and lead with different percentages in the perovskite thin film. Also, the preparation of these layers and also other layers to fabricate solar cells based on them were conducted in an open and non-glove box environment. Finally, the effect of [Sn/Pb] ratio in the CH3NH3Sn1-xPbxI3 layers on the structural, morphological, optical, electrical and photovoltaic performance have been investigated. Findings CH3NH3Sn1-xPbxI3 (x = 0.0, 0.25, 0.50, 0.75, 1.0) perovskite thin films have been grown by a spin-coating technique. It was found that as tin concentration increases, the X-ray diffraction and FESEM images studies revealed the formation of both CH3NH3PbI3 and CH3NH3SnI3 phases, and improvement in crystallinity, and morphology; all thin films had high absorption coefficient values close to 104 cm−1 in the visible region, and the direct optical bandgap in the layers decreases from 1.63 eV in pure CH3NH3SnI3 to 1.46 eV for CH3NH3Sn0.0.25Pb0.75I3 samples; all thin films had p-type conductivity, and mobility and carrier density increased; perovskite solar cells based on these thin films have been fabricated, and device performance was investigated. Results showed that photo-conversion efficiency (PCE) for the pure CH3NH3PbI3sample was 1.20%. With adding SnI2, PCE was increased to 4.48%. Originality/value The preparation method seems to be interesting as it is in an ambient environment without the protection of nitrogen or argon gas.

scholarly journals Fabrication and Characterisation of ZnO Thin Film by Sol–Gel Technique

2019 ◽  
Vol 61 (1) ◽  
pp. 64-70
Author(s):  
Said Benramache
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Visible Region ◽  
Average Crystallite Size ◽  
Hexagonal Wurtzite Structure ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
Zno Thin Film ◽  
Optimal Value ◽  
Type Semiconductor

AbstractWe investigated the structural and optical properties of zinc oxide (ZnO) thin film as the n-type semiconductor. In this work, the sol–gel method used to fabricate ZnO thin film on glass substrate with 0.5 mol/l of zinc acetate dehydrates. The crystals quality of the thin film analyzed by X-ray diffraction and the optical transmittance was carried out by an ultraviolet-visible spectrophotometer. The DRX analyses indicated that ZnO film have polycrystalline nature and hexagonal wurtzite structure with (002) preferential orientation and the measured average crystallite size of ZnO of 207.9 nm. The thin film exhibit average optical transparency about 90 %, in the visible region, found that optical band gap energy was 3.282 eV, the Urbach energy also was calculated from optical transmittance to optimal value is 196.7 meV.

Growth and Characterization of Tin Sulphide Nanostructured Thin Film by Chemical Bath Deposition for Near-Infrared Photodetector Application

2019 ◽  
Vol 290 ◽  
pp. 220-224 ◽  
Author(s):  
Mohamed S. Mahdi ◽  
Kamarulazizi Ibrahim ◽  
Naser Mahmoud Ahmed ◽  
Arshad Hmood ◽  
Shrook A. Azzez
Keyword(s):  
Thin Film ◽  
Chemical Bath Deposition ◽  
Near Infrared ◽  
Morphological Characteristics ◽  
Trisodium Citrate ◽  
Light Illumination ◽  
X Ray Diffraction ◽  
Nanostructured Thin Film ◽  
Complex Agent ◽  
Metal Semiconductor Metal

This study involves synthesizing of nanostructured tin sulphide (SnS) thin film on a glass substrate by chemical bath deposition technique. SnS film was prepared using non-toxic trisodium citrate (TSC) as a complex agent. The structural and morphological characteristics of the film were characterized by using X-ray diffraction (XRD), optical field emission scanning electron microscopy (FESEM). The XRD pattern confirmed an orthorhombic structure. The FESEM image revealed nanoflakes of the as-prepared SnS thin film. Moreover, near-infrared (NIR) metal semiconductor metal photodetector, which exhibited good photoresponse characteristics under (750 nm) light illumination was fabricated. The photoresponse characteristics also were investigated at different illumination power densities. The photodetector revealed excellent reproducibility and stability characteristics.

Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

1997 ◽  
Vol 12 (3) ◽  
pp. 651-656 ◽  
Author(s):  
P. K. Nair ◽  
L. Huang ◽  
M. T. S. Nair ◽  
Hailin Hu ◽  
E. A. Meyers ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Atomic Diffusion ◽  
Optical Coatings ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cell Structures ◽  
Potential Applications ◽  
Xrd Patterns ◽  
P Type

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

Sign in / Sign up

Export Citation Format

Share Document