A Study on STI and Damascene CMP using Chip Level Simulation

2001 ◽  
Vol 671 ◽  
Author(s):  
Kyung-Hyun Kim ◽  
Yoo-Hyon Kim ◽  
Kwang-Bok Kim ◽  
Chang-Ki Hong ◽  
Moon-Hyun Yoo
Keyword(s):  
Chemical Mechanical Polishing ◽  
Thickness Distribution ◽  
Measured Data ◽  
Mechanical Polishing ◽  
Process Conditions ◽  
Spring Model ◽  
Design Rules ◽  
Erosion Model ◽  
Level Planarity ◽  
Elastic Spring

ABSTRACTSimulation of chemical-mechanical polishing is important because the chip-level planarity are difficult to control. The simulator has been developed for predicting and optimizing the thickness distribution after the STI and damascene CMP as well as ILD CMP using chip-level pattern density, elastic spring model and erosion model. In this study, the results of CMP simulation is shown to agree well with the measured data. The simulator can be used to optimize CMP process conditions and to generate design rules for filling dummy patterns which are used to improve the planarity and uniformity.

Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions

2006 ◽  
Vol 46 (9-11) ◽  
pp. 1679-1684 ◽  
Author(s):  
C. Yuan ◽  
W.D. van Driel ◽  
R. van Silfhout ◽  
O. van der Sluis ◽  
R.A.B. Engelen ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Process Conditions ◽  
Polishing Process ◽  
Chemical Mechanical Polishing Process ◽  
Low K

Diamond Disc Pad Conditioning in Chemical Mechanical Polishing: A Literature Review of Process Modeling

2009 ◽  
Author(s):  
Emmanuel A. Baisie ◽  
Z. C. Li ◽  
X. H. Zhang
Keyword(s):  
Process Modeling ◽  
Chemical Mechanical Polishing ◽  
Research Work ◽  
Mechanical Polishing ◽  
Process Models ◽  
Future Research ◽  
Process Conditions ◽  
Paper Briefly ◽  
Pad Conditioning ◽  
Diamond Disc

Chemical Mechanical Polishing (CMP) is a major manufacturing step extensively used to planarize semiconductor wafers. In CMP, the polishing pad surface is glazed by residues. A diamond disc conditioner is used to dress the pad to regenerate new pad profile and asperity in order to maintain favorable process conditions. This paper presents a review on process modeling of diamond disc pad conditioning in CMP. Following the introduction, the paper briefly introduces a technical background of the conditioning process and process control. It then summarizes research work on the various analytical process models proposed and ends with conclusions and topics for future research.

Effect of Anisotropy on Chemical Mechanical Polishing of LBO Crystal

2010 ◽  
Vol 431-432 ◽  
pp. 33-36
Author(s):  
Jun Li ◽  
Yong Wei Zhu ◽  
Dun Wen Zuo ◽  
Yong Zhu ◽  
Chuang Tian Chen
Keyword(s):  
Surface Roughness ◽  
Thermal Expansion ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Precision Machining ◽  
Process Conditions ◽  
Lbo Crystal ◽  
Ultra Precision

The anisotropy of LBO crystal leads to the different properties of different crystal faces, such as thermal expansion coefficient, which results in trouble of ultra-precision machining. Chemical mechanical polishing of a face (001), b face (010) and c face (001) of LBO crystal by adopting Logitech PM5 Precision Lapping & Polishing Machine in the same process conditions was investigated. The effect of anisotropy on MRR and surface roughness was studied. In the same CMP process conditions, c face of LBO crystal is the highest MRR, b face is inferior to and a face is the lowest. And surface roughness of c face is the best, b face is followed and a face is the worst. The results also show that the anisotropy leads to the different MRR and surface roughness on different crystal faces. In CMP of LBO crystal, the higher MRR is, and the better surface roughness is in the scope of experiment.

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

scholarly journals Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

2021 ◽  
Author(s):  
Peili Gao ◽  
Tingting Liu ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Run-Ping Ye ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Ordered Mesoporous ◽  
Mesoporous Structures

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

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