Epitaxial Island Growth and the Stranski-Krastanow Transition
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AbstractThe way in which the Stranski-Krastanow epitaxial islanding transition can be controlled by strain due to elemental segregation within the initially-formed flat ‘wetting’ layer is examined in detail. Experimentally measured critical ‘wetting’ layer thicknesses for the InxGa1−xAs/GaAs system (x = 0.25 - 1) are demonstrated to show good agreement with values calculated using a segregation model. The strain energy associated with the segregated surface layer is determined for the complete range of deposited In concentrations using atomistic simulations. The segregation-mediated driving force for the Stranski-Krastanow transition is considered to be important also for all other epitaxial systems exhibiting the transition.
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1988 ◽
Vol 15
(3)
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pp. 149-156
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Keyword(s):
2004 ◽
Vol 261-263
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pp. 75-80
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2018 ◽
Vol 140
(6)
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