Microstructure and Electrical Characteristics of La1−xSrxMnO3 (0.19≤x≤0.31) Thin Films Prepared by Sputter Techniques

1999 ◽  
Vol 602 ◽  
Author(s):  
H. Heo ◽  
S.J. Lim ◽  
G.Y. Sung ◽  
N.-H. Cho
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Substrate Temperature ◽  
Electrical Transport ◽  
Substrate Surface ◽  
Electrical Characteristics ◽  
Tetragonal System ◽  
Polycrystalline Thin Films ◽  
Magneto Resistance ◽  
Post Deposition

AbstractLa1−x SrxMnO3(0.19≤x≤0.31) thin films were prepared on silicon wafers by sputter techniques. The effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystalline structure and electrical characteristics of the films was investigated. The films grown at a substrate temperature of 500°C were found to be of the pseudo-tetragonal system (0.97≤a/c≤1) and exhibited a strong tendency of {001} planes to lie parallel to substrate surface. With the increase of x, the electrical resistivity of the films decreased and the transition temperature between the metallic and semiconducting electrical transport behaviors shifted to high temperature. With a magnetic field of 0.18 Tesla, the maximum magneto-resistance ratio (MR%) of La0.69Sr0.31MnO3 polycrystalline thin films was about 390%.

IN-SITU PREPARATION OF YBa2Cu3O7 SUPERCONDUCTING THIN FILMS BY PULSED Nd:YAG LASER DEPOSITION

1992 ◽  
Vol 06 (08) ◽  
pp. 477-483 ◽  
Author(s):  
QINGXIN SU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
HUIBIN LU ◽  
YONGJUN TIAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Nd:Yag Laser ◽  
Ac Susceptibility ◽  
Substrate Surface ◽  
Zero Magnetic Field ◽  
Superconducting Thin Films ◽  
In Situ Preparation ◽  
Zero Resistance

High-T c superconducting thin films of YBa 2 Cu 3 O 7 were grown in-situ on (100) SrTiO 3 substrates by Nedymium:yttrium aluminum garnet [Nd:YAG] laser ablation. The effects of the substrate temperature on the transition temperature, microcrystalline structure and surface morphology of the films were discussed. Best results were obtained in the 730°–770°C range. X-ray diffraction analysis showed that these films were highly c-oriented with the c-axis perpendicular to the substrate surface. At the optimum substrate temperature, a very smooth morphology with only a few small particles were observed by scanning electron microscopy. The zero resistance temperature of these films were ≥ 90 K with a narrow transition width and the ac susceptibility measurement also gave the same result. The highest critical current density obtained at 77 K and zero magnetic field was 3.8 × 106 A/cm 2.

Synthesis of TPD-Containing Polymer Thin Films by Physical Vapor Deposition

2001 ◽  
Vol 710 ◽  
Author(s):  
Hiroaki Usui ◽  
Terufumi Yoshioka ◽  
Takahiro Katayama ◽  
Kuniaki Tanaka ◽  
Hisaya Sato
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Physical Vapor Deposition ◽  
Substrate Surface ◽  
Polymer Thin Films ◽  
Polymerization Reaction ◽  
Ir Absorption ◽  
Acrylate Monomer ◽  
Organic Optoelectronic Devices ◽  
Organic Optoelectronic

ABSTRACTPolymer thin films having tetraphenyl diaminobiphenyl (TPD) side chain were prepared by evaporating its acrylate monomer by the ionization-assisted deposition (IAD) method. IR absorption and GPC analyses showed that the electron irradiation to the evaporated material works efficiently to initiate the polymerization reaction on the substrate surface, while the simple evaporation produced films mainly consisting of the monomers. The reaction was enhanced by increasing the substrate temperature. However, the surface roughness increased with increasing substrate temperature. Post annealing can be an alternative method to enhance the polymer yield. Light emitting diodes were prepared by stacking the TPD polymer layer, Alq3 emissive layer, and Al electrode on ITO-coated glass. The IAD polymerization can be a useful method for preparing polymer thin films for organic optoelectronic devices.

CHARACTERIZATION OF Bi2Te3 THIN FILMS FOR APPLICATION IN MICRO-THERMO ELECTRIC COOLERS

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4063-4068 ◽  
Author(s):  
SEUNG WOO HAN ◽  
MD ANWARUL HASAN ◽  
KI-HO CHO ◽  
HAK JOO LEE ◽  
DONG-HO KIM ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Electrical Transport ◽  
Ion Beam ◽  
Test Method ◽  
Nanoindentation Test ◽  
Electrical Transport Properties ◽  
Thermo Electric

In this study we have characterized the mechanical and electrical properties of Bi 2 Te 3 thin films prepared by co-sputtering method. The film structure and morphology were revealed using the X-ray diffraction and scanning electron microscopy (SEM). Thickness of the deposited films was measured using SEM observation after FIB (Focused Ion Beam) milling, and the surface roughness of the films was analyzed using AFM (atomic force microscopy). Electrical transport properties were measured with a Hall effect measurement system, while the mechanical properties were evaluated using nanoindentation test method. Results showed that Bi 2 Te 3 thin films have amorphous structure at lower film thicknesses, but as the thickness increases the structure becomes polycrystalline. Surface roughness and crystal size of the films increased with increase in substrate temperature. Films showed higher elastic modulus and hardness values compared to those of the bulk Bi 2 Te 3 alloy. The electrical transport properties of the films were also affected by the substrate temperature.

Growth and Structure of Germanium Films Evaporated Onto Rock Salt

1970 ◽  
Vol 28 ◽  
pp. 512-513
Author(s):  
G. Shimaoka ◽  
S. C. Chang
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Rock Salt ◽  
Electron Beam Irradiation ◽  
Substrate Surface ◽  
Beam Irradiation ◽  
Deposition Rates ◽  
Surface Conditions ◽  
Germanium Films

Recent studies of evaporated germanium films have demonstrated that their structure and epitaxy are greatly influenced by various evaporation parameters such as vacuum pressure, substrate surface conditions, and deposition rate as veil as substrate temperature. The purpose of this study is to investigate growth and structure of germanium thin films evaporated onto a clean rock-salt substrate in ultrahlgh vacuum and to find optimum epitaxial growth condition.High-purity (intrinsic) germanium was evaporated at various deposition rates, 0.1-5Å/sec, and thicknesses, 3O-5OOÅ, onto vacuum-cleaved and air-cleaved (001)NaCl substrates held at 25°-500°C in a vacuum of ∼10-8Torr. Some films were prepared under lateral electric field of dc 100V/cm or an electron-beam irradiation with ∼1015 electrons/cm2/sec, 300-400V, applied to the substrate during evaporation.

Deposition and characterization of ZrO2 thin films on silicon substrate by MOCVD

1993 ◽  
Vol 8 (6) ◽  
pp. 1361-1367 ◽  
Author(s):  
Cheol Seong Hwang ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Surface ◽  
Relative Dielectric Constant ◽  
Grain Structure ◽  
Breakdown Field ◽  
Electrical Characteristics ◽  
Dielectric Thin Film ◽  
Si Substrates ◽  
Columnar Grain

ZrO2 thin films were deposited at 1 atm on Si substrates by oxidation-assisted thermal decomposition of zirconium-trifluoroacetylacetonate in the temperature range of 300–615 °C. Above a deposition temperature of 400 °C, the deposited thin films have a columnar grain structure, where each grain is perpendicular to the substrate surface with a c-axis preferred crystallographic orientation, and have poor electrical characteristics as a dielectric thin film. But the thin film deposited at 350 °C has a fine equiaxed microcrystalline structure and has superior electrical characteristics of a breakdown field of 1 MV/cm and a relative dielectric constant of 27.

Alternative simple method to realize p-type BaSi2 thin films for Si heterojunction solar cell applications

MRS Advances ◽  
2018 ◽  
Vol 3 (25) ◽  
pp. 1435-1442 ◽  
Author(s):  
Kazuma Takahashi ◽  
Yoshihiko Nakagawa ◽  
Kosuke O. Hara ◽  
Isao Takahashi ◽  
Yasuyoshi Kurokawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Substrate Temperature ◽  
Chemical Vapor ◽  
Hole Density ◽  
Simple Method ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Post Deposition

Abstract:A novel preparation method of B-doped p-type BaSi2 (p-BaSi2) is proposed to realize heterojunction crystalline Si solar cells with p-BaSi2. The method consists of thermal evaporation of BaSi2 on B-doped amorphous Si (a-Si). In this study, the effect of a-Si interlayers and substrate temperature during BaSi2 evaporation on the electrical characteristics and crystalline quality of the evaporated films were investigated. While no cracks were found in the BaSi2 films formed using hydrogenated a-Si deposited by plasma enhanced chemical vapor deposition (PECVD), the films formed with sputtered a-Si have cracks. In addition, BaSi2 films formed with a 600 °C substrate temperature using PECVD a-Si showed p-type characteristics. After a post-deposition anneal at 800 °C for 5 minutes, the film hole density was measured at 1.3×1019 cm-3 and boron was found to be uniformly distributed throughout the film. These results show that the proposed method using PECVD is promising to obtain p-BaSi2 thin films with high hole density for p-BaSi2/n-type crystalline Si heterojunction solar cells.

Effect of substrate temperature and post-deposition annealing on the properties of evaporated CdSe thin films

2007 ◽  
Vol 244 (2) ◽  
pp. 497-504 ◽  
Author(s):  
E. Bacaksiz ◽  
B. M. Basol ◽  
M. Altunbaş ◽  
S. Yılmaz ◽  
M. Tomakin ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Post Deposition Annealing ◽  
Post Deposition

scholarly journals Polycrystalline thin films of antimony selenide via chemical bath deposition and post deposition treatments

2005 ◽  
Vol 493 (1-2) ◽  
pp. 77-82 ◽  
Author(s):  
Y. Rodríguez-Lazcano ◽  
Yolanda Peña ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Polycrystalline Thin Films ◽  
Antimony Selenide ◽  
Post Deposition

Composite BST/MgO thin films for microwave tunable devices

2000 ◽  
Vol 656 ◽  
Author(s):  
T. V. Rivkin ◽  
J. D. Perkins ◽  
P. A. Parilla ◽  
D. S. Ginley ◽  
C. M. Carlson ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Lattice Parameter ◽  
Out Of Plane ◽  
Spatial Redistribution ◽  
Different Temperatures ◽  
Higher Temperature ◽  
Mgo Substrate ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTComposite thin films of 60 wt% Ba0.6Sr0.4TiO3 and 40 wt% MgO were produced by Pulsed Laser Deposition. The biaxial texture of the BST component on the MgO substrate has been established with XRD. All as-deposited films had an enlarged BST out-of-plane lattice parameter. A more relaxed lattice constant as well as higher degree of texture has been obtained in the films deposited at higher temperature and lower deposition rate. Post-deposition annealing in flowing oxygen results in a further relaxation and alignment of the BST lattice. The as-deposited films were not tunable at room temperature. The greatest dielectric tuning was achieved in films annealed at 1200 °C. The observed difference in tunability for the films annealed at different temperatures may result from a spatial redistribution of BST material on the substrate surface during annealing.

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