Optimization of Ultrathin ALD Tantalum Nitride Films for Zero-Thickness Liner Applications

2002 ◽  
Vol 716 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Eric Eisenbraun ◽  
Alain Kaloyeros
Keyword(s):  
Film Growth ◽  
Substrate Surface ◽  
Performance Testing ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
Processing Temperature ◽  
Layer Deposition ◽  
Metal Organic ◽  
Substrate Independent

AbstractA metal-organic atomic layer deposition (ALD) tantalum nitride process has been demonstrated for zero-thickness liner applications in advanced copper metallization schemes. Utilizing a commercially available ALD reactor, this process employs a liquid tantalum source (tertbutylimido tris(diethylamido) tantalum—TBTDET) and ammonia as the reactants. Key functionality data addressing the self-limiting nature of ALD film growth with respect to key process parameters including processing temperature and the substrate surface exposures to TBTDET and ammonia have been obtained, leading to the establishment of an optimized ALD processing window. Highly conformal, continuous, and smooth growth over high aspect ratio structures is exhibited, and incubation periods appear to be relatively substrate independent. Preliminary thermal and electrical copper barrier performance testing of the deposited films indicates that they hold promise for use in emerging nanoscale interconnect applications.

Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes

2004 ◽  
Vol 19 (2) ◽  
pp. 447-453 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Kathleen Dunn ◽  
Eric T. Eisenbraun ◽  
Alain E. Kaloyeros
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Process Window ◽  
Copper Metallization ◽  
Oxygen Impurity ◽  
Gas Purge ◽  
Layer Deposition ◽  
Rate Versus

A metal–organic thermal atomic layer deposition (ALD) approach was developed for the growth of ultrathin tantalum nitride (TaNx) films by alternate pulses of tert-butylimido trisdiethylamido tantalum (TBTDET) and ammonia (NH3). An optimized ALD process window was established by investigating saturation of film-growth rate versus TBTDET and NH3 exposures, as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (250 °C) ALD process yielded uniform, continuous, and conformal TaNx films with a Ta:N ratio of 1:1. Carbon and oxygen impurity levels were in the 5–8 at.% range. Associated film conformality in 100-nm trench structures with 11:1 aspect ratio was nearly 100%.

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemes

2007 ◽  
Vol 22 (5) ◽  
pp. 1292-1298 ◽  
Author(s):  
Yu Zhu ◽  
Kathleen A. Dunn ◽  
Alain E. Kaloyeros
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Process Window ◽  
Copper Metallization ◽  
Oxygen Impurity ◽  
Copper Electroplating ◽  
Gas Purge ◽  
Layer Deposition ◽  
Rate Versus

A thermal metalorganic atomic layer deposition (ALD) process was developed for the in situ, sequential growth of Pt/TaNx stacks for use as barrier/seed stacks for subsequent copper electroplating. Ultrathin platinum films were deposited by alternating pulses of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen (O2) as co-reactants. An ALD process window was established and optimized by investigating saturation of Pt film-growth rate versus MeCpPtMe3 and O2 exposure as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (300 °C) ALD Pt process yielded uniform and continuous Pt films with typical carbon and oxygen impurity levels around, respectively, 2.5 and 1 at.%. Film conformality was nearly 100% in 120-nm trench structures with 11:1 aspect ratio.

Preparation of TaN Thin Film by H2 Plasma Assisted Atomic Layer Deposition Using Tert-Butylimino-Tris-Ethylmethylamino Tantalum

2006 ◽  
Vol 6 (11) ◽  
pp. 3392-3395 ◽  
Author(s):  
Deung-Kwan Kim ◽  
Bo-Hye Kim ◽  
Hee-Gweon Woo ◽  
Do-Heyoung Kim ◽  
Hyun Koock Shin
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Rf Power ◽  
Film Properties ◽  
Layer Deposition ◽  
Plasma Pulse ◽  
The Stability

The plasma assisted atomic layer deposition (ALD) of tantalum nitride (TaN) thin films were conducted using tert-butylimino-tris-ethylmethylamino tantalum (TBTEMAT) and hydrogen plasma at 250 °C. The effects of H2-plasma pulse time and RF power on the film properties, such as resistivity, surface roughness, step coverage and stability in air, were examined. The film growth rate (thickness/cycle) was in the range of 0.05–0.08 nm/cycle and the resistivity of the films varied from 490 to 70000 μΩ cm, depending on the plasma conditions. Longer plasma pulse times and increasing RF power yielded films of lower resistivity along with improving the stability. The films were smooth and the conformality of the films deposited in 0.28 μm holes with an aspect ratio of 7:1 was 100%.

scholarly journals On the Use of MOFs and ALD Layers as Nanomembranes for the Enhancement of Gas Sensors Selectivity

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1552 ◽  
Author(s):  
Weber ◽  
Graniel ◽  
Balme ◽  
Miele ◽  
Bechelany
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Metal Organic Frameworks ◽  
Atomic Layer ◽  
Operational Performance ◽  
Layer Deposition ◽  
Metal Organic ◽  
Further Development ◽  
Different Gases

Improving the selectivity of gas sensors is crucial for their further development. One effective route to enhance this key property of sensors is the use of selective nanomembrane materials. This work aims to present how metal-organic frameworks (MOFs) and thin films prepared by atomic layer deposition (ALD) can be applied as nanomembranes to separate different gases, and hence improve the selectivity of gas sensing devices. First, the fundamentals of the mechanisms and configuration of gas sensors will be given. A selected list of studies will then be presented to illustrate how MOFs and ALD materials can be implemented as nanomembranes and how they can be implemented to improve the operational performance of gas sensing devices. This review comprehensively shows the benefits of these novel selective nanomaterials and opens prospects for the sensing community.

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

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