Antireflective MgF2 Coating on Polycarbonate

AbstractWe deposited MgF2 thin films using the ion-plating method that features RF and DC biasing to the substrate holder. We investigated the effects of RF powers, substrate temperatures (Ts) and DC bias voltages on optical absorption and abrasion resistance of the films. The optical absorption deteriorated by increasing RF power and Ts. In particular, the deterioration was quite serious when the Ts were above 423 K. The abrasion resistance increased by increasing the Ts. We found that the abrasion resistance could be improved also by increasing a DC bias voltage. The same abrasion resistance as the film deposited by a conventional heat resistance deposition at 573 K was obtained by applying the DC bias voltage of -500 V and the Ts of 300 K.

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Single Wafer, Anisotropic Etching of Polysilicon with C12/SF6 and Trielectrode Reactor Operation

MRS Proceedings ◽

10.1557/proc-68-29 ◽

1986 ◽

Vol 68 ◽

Author(s):

James E. Nulty

Keyword(s):

Bias Voltage ◽

Etch Rate ◽

Proximity Effects ◽

The Self ◽

Rf Power ◽

Reactor Operation ◽

Lower Electrode ◽

Dc Bias ◽

Bias Versus ◽

Etching System

AbstractA totally anisotropic, highly selective dry poly etch process has been developed that is capable of etching sub-2.0 micron linewidths.Doped poly etch rates of 10,000 A/min.are obtained using C12-only chemistry.Standard novolac or bilevel photoresist is used, depending on the lithography requirements.Anisotropy is achieved without the use of carbon-containing gases; as a result, minimal proximity effects are observed between dense and stand alone etched lines.Wafer maps of etched linewidths on 4-inch wafers are presented, showing mask to final bias and uniformity results.A commercially available triode dry etching system was used for the work.The self-induced dc bias voltage can be selected regardless of the applied rf power.The effect of variable self-induced dc bias versus applied rf power is presented for selectivity, upper and lower electrode interactions, and etch rate uniformity.Characterization by the use of spectroscopy is also presented, showing changes due to varying the self-induced dc bias at a constant rf power.

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Mechanical Properties of Cr-Si-N Coatings Prepared by Arc Ion Plating Method and Influence of Bias Voltage on Them

Journal of The Surface Finishing Society of Japan ◽

10.4139/sfj.55.286 ◽

2004 ◽

Vol 55 (4) ◽

pp. 286-291 ◽

Cited By ~ 3

Author(s):

Chaoyin NIE ◽

Akiro ANDO ◽

Hisashi WATANABE ◽

Saburou OHTANI

Keyword(s):

Mechanical Properties ◽

Bias Voltage ◽

Arc Ion Plating ◽

Ion Plating ◽

Plating Method

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Effects of RF power and bias voltage on formation of titanium nitride film by RF ion plating.

Journal of the Metal Finishing Society of Japan ◽

10.4139/sfj1950.36.330 ◽

1985 ◽

Vol 36 (8) ◽

pp. 330-334 ◽

Cited By ~ 4

Author(s):

Norihide NISHIDA ◽

Fumio YOKOYAMA

Keyword(s):

Titanium Nitride ◽

Bias Voltage ◽

Nitride Film ◽

Rf Power ◽

Ion Plating ◽

Titanium Nitride Film

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Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽

10.3390/en14030638 ◽

2021 ◽

Vol 14 (3) ◽

pp. 638

Author(s):

Sanam SaeidNahaei ◽

Hyun-Jun Jo ◽

Sang Jo Lee ◽

Jong Su Kim ◽

Sang Jun Lee ◽

...

Keyword(s):

Solar Cell ◽

Electric Field ◽

Electric Fields ◽

Bias Voltage ◽

Tunnel Junction ◽

Photogenerated Carrier ◽

Internal Electric Field ◽

Junction Solar Cell ◽

Photoreflectance Spectroscopy ◽

Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

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