Mechanistic Understanding of Material Detachment During CMP Processing

2002 ◽  
Vol 732 ◽  
Author(s):  
Wei Che ◽  
Yongjin Guo ◽  
Ashraf Bastawros ◽  
Abhijit Chandra
Keyword(s):  
Material Removal ◽  
Defect Formation ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Copper Film ◽  
Integrated Approach ◽  
Numerical Approach ◽  
Dynamics Simulation ◽  
Continuum Scale ◽  
Deformation Patterns

AbstractA combined experimental and numerical approach has been devised to understand the abrasion aspects of material removal mechanisms of ductile copper film on silicon wafers during Chemical mechanical planarization. The experimentally observed trends of the deformation patterns and the force profiles from micro and nano-single scratch experiments are used to guide numerical simulation using finite element simulation at the continuum scale and molecular dynamics simulation at the atomistic scale. Such integrated approach has provided several plausible mechanisms for material detachments through a combination of surface plowing and shearing under the abrasive particles. The gained insights can be integrated into mechanismbased models for the material removal rate in these processes as well as addressing possible defect formation.

Finite Element Modeling of Pad Deformation due to Diamond Disc Conditioning in Chemical Mechanical Polishing (CMP)

2012 ◽  
Author(s):  
Emmanuel A. Baisie ◽  
Z. C. Li ◽  
X. H. Zhang
Keyword(s):  
Mechanical Properties ◽  
Finite Element ◽  
Material Removal ◽  
High Performance ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Element Analysis ◽  
Fea Model ◽  
Pad Wear ◽  
Diamond Disc

Chemical mechanical planarization (CMP) is widely used to planarize and smooth the surface of semiconductor wafers. In CMP, diamond disc conditioning is traditionally employed to restore pad planarity and surface asperity. Pad deformation which occurs during conditioning affects the material removal mechanism of CMP since pad shape, stress and strain are related to cut rate during conditioning, pad wear rate and wafer material removal rate (MRR) during polishing. Available reports concerning the effect of diamond disc conditioning on pad deformation are based on simplified models of the pad and do not consider its microstructure. In this study, a two-dimensional (2-D) finite element analysis (FEA) model is proposed to analyze the interaction between the diamond disc conditioner and the polishing pad. To enhance modeling fidelity, image processing is utilized to characterize the morphological and mechanical properties of the pad. An FEA model of the characterized pad is developed and utilized to study the effects of process parameters (conditioning pressure and pad stiffness) on pad deformation. The study reveals that understanding the morphological and mechanical properties of CMP pads is important to the design of high performance pads.

Understanding Selectivity on Germanium/SiO2 Chemical Mechanical Planarization Through Design of Experiments

2015 ◽  
Vol 1790 ◽  
pp. 19-24
Author(s):  
Ayse Karagoz ◽  
James Mal ◽  
G. Bahar Basim
Keyword(s):  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Active Agent ◽  
Chemical Mechanical Planarization ◽  
Sodium Dodecyl ◽  
Active Agent ◽  
High Mobility ◽  
High Removal Rate ◽  
The Impact

ABSTRACTThe continuous trend of achieving more complex microelectronics with smaller nodes yet larger wafer sizes in microelectronics manufacturing lead to aggressive development requirements for chemical mechanical planarization (CMP) process. Particularly, beyond the 14 nm technology the development needs made it a must to introduce high mobility channel materials such as Ge. CMP is an enabler for integration of these new materials into future devices. In this study, we implemented a design of experiment (DOE) methodology in order to understand the optimized CMP slurry parameters such as optimal concentration of surface active agent (sodium dodecyl sulfate-SDS), concentration of abrasive particles and pH from the viewpoint of high removal rate and selectivity while maintaining a defect free surface finish. The responses examined were particle size distribution (slurry stability), zeta potential, material removal rate (MRR) and the surface defectivity as a function of the selected design variables. The impact of fumed silica particle loadings, oxidizer (H2O2) concentration, SDS surfactant concentration and pH were analyzed on Ge/silica selectivity through material removal rate (MRR) surface roughness and defectivity analyses.

Experimental Investigation on Effects of Passivants in the Abrasive-Free Polishing of Copper Film

2010 ◽  
Vol 126-128 ◽  
pp. 316-319
Author(s):  
Jhy Cherng Tsai ◽  
Wei Ching Lin
Keyword(s):  
Experimental Data ◽  
Experimental Investigation ◽  
Citric Acid ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Copper Film ◽  
Copper Base ◽  
Polishing Pressure ◽  
Better Than

Abrasive Free Polishing (AFP) is a polishing technology without abrasives and widely employed in copper-base semiconductor fabrications. This paper investigates the effect of passivants, added to the slurry, on the material removal rate (MRR) and the non-uniformity (NU) via experiments. Two kinds of passivants, Benzotriazole (BTA) and citric acid (CA) are added to the slurry for the experiments. Experimental results showed that the MRR increases when polishing pressure increases while NU decreases at the same time. Both MRR and NU tends to increase when rotational speed increases, though MRR and NU at 40 rpm are lower than that at 30 and 50 rpm in the slurry with CA. Experimental data also showed that AFP using the slurry with CA performs better than that with BTA.

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