Growth of Polycrystalline Silicon Carbide on Thin Polysilicon Sacrificial Layers for Surface Micromachining Applications

2002 ◽  
Vol 741 ◽  
Author(s):  
R.F. Wiser ◽  
J. Chung ◽  
M. Mehregany ◽  
C.A. Zorman
Keyword(s):  
Silicon Carbide ◽  
Atmospheric Pressure ◽  
Polycrystalline Silicon ◽  
Sacrificial Layer ◽  
Chemical Vapor ◽  
Polycrystalline Silicon Carbide ◽  
Pressure Chemical ◽  
Sacrificial Layers ◽  
High Degree ◽  
Sic Films

ABSTRACTPolycrystalline silicon carbide (poly-SiC) films were deposited by atmospheric pressure chemical vapor deposition (APCVD) at epitaxial growth temperatures on planar, 100 nm-thick polysilicon sacrificial layers using two recipes that included or excluded a pre-growth carbonization step. Poly-SiC films grown using the carbonization-based recipe exhibited a relatively high degree of (111) 3C-SiC texture and had uniform, well-defined, void-free poly-SiC/polysilicon interfaces. In contrast, poly-SiC films grown without carbonization were randomly oriented, had numerous poly-SiC inclusions that sometimes completely penetrated the polysilicon underlayer, and had a higher surface roughness than the films grown with carbonization. Analysis of micromechanical clamped-clamped (C-C) beam resonators fabricated from films grown using the two differing recipes shows that the carbonization step is needed to protect the thin polysilicon sacrificial layer from voids and inclusions and thus maintain the proper spacing between the drive electrodes and the resonant beams.

Novel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVD

2006 ◽  
Vol 527-529 ◽  
pp. 755-758
Author(s):  
L. Chen ◽  
Xiao An Fu ◽  
Christian A. Zorman ◽  
Mehran Mehregany
Keyword(s):  
Atmospheric Pressure ◽  
Polycrystalline Silicon ◽  
Electrochemical Etching ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Porous Structures ◽  
Porous Polycrystalline ◽  
Polycrystalline Silicon Carbide ◽  
Pressure Chemical ◽  
Sic Films

A selective atmospheric pressure chemical vapor deposition (APCVD) process has been developed to deposit porous polycrystalline silicon carbide (poly-SiC) thin films containing a high density of through-pores measuring 50 to 70 nm in diameter. The selective deposition process involves the formation of poly-SiC films on patterned SiO2/polysilicon thin film multilayers using a carbonization-based 3C-SiC growth process. This technique capitalizes on significant differences in the nucleation of poly-SiC on SiO2 and polysilicon surfaces in order to form mechanically-durable, chemically-stable, and well anchored porous structures, thus offering a simple and potentially more versatile alternative to direct electrochemical etching.

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

1998 ◽  
Vol 13 (2) ◽  
pp. 406-412 ◽  
Author(s):  
Christian A. Zorman ◽  
Shuvo Roy ◽  
Chien-Hung Wu ◽  
Aaron J. Fleischman ◽  
Mehran Mehregany
Keyword(s):  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Polycrystalline Silicon Carbide ◽  
Pressure Chemical ◽  
Temperature Deposition ◽  
Sic Films

X-ray diffraction, transmission electron microscopy, and Rutherford backscattering spectroscopy were used to characterize the microstructure of polycrystalline SiC films grown on as-deposited and annealed polysilicon substrates. For both substrate types, the texture of the SiC films resembles the polysilicon at the onset of SiC growth. During the high temperature deposition process, the as-deposited polysilicon recrystallizes without influencing the crystallinity of the overlying SiC. An investigation of the SiC/polysilicon interface reveals that a heteroepitaxial relationship exists between polysilicon and SiC grains. From this study, a method to control the orientation of highly textured polycrystalline SiC films has been developed.

Fracture toughness of low-pressure chemical-vapor-deposited polycrystalline silicon carbide thin films

2006 ◽  
Vol 99 (1) ◽  
pp. 013517 ◽  
Author(s):  
V. Hatty ◽  
H. Kahn ◽  
J. Trevino ◽  
C. A. Zorman ◽  
M. Mehregany ◽  
...  
Keyword(s):  
Thin Films ◽  
Fracture Toughness ◽  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposited ◽  
Polycrystalline Silicon Carbide ◽  
Pressure Chemical

Xrd and Xtem Investigation of Polycrystalline Silicon Carbide on Polycrystalline Silicon

1996 ◽  
Vol 444 ◽  
Author(s):  
S. Roy ◽  
C. A. Zorman ◽  
C. H. Wu ◽  
A. J. Fleischman ◽  
M. Mehregany
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Before And After ◽  
Pressure Chemical ◽  
Polysilicon Films ◽  
Sic Films

AbstractAtmospheric pressure chemical vapor deposition (APCVD) was used to grow silicon carbide (SiC) on as-deposited and annealed polycrystalline silicon (polysilicon) films which were deposited on oxidized Si wafers. X-ray diffraction (XRD) reveals that SiC films grown on asdeposited polysilicon have a (110) orientation. XRD performed on as-deposited polysilicon before and after SiC growth reveals that the orientation of polysilicon changes from (110) to a mixture of (110) and (11) during growth of 2 μm-thick SiC films. Cross-sectional transmission electron microscopy (XTEM) images of the SiC/polysilicon interface show that the SiC appears to be unaffected by the recrystallization of the underlying polysilicon during the SiC growth. XRD from samples of SiC grown on annealed polysilicon show that both films have (110) and (111) orientations. For SiC films grown on annealed polysilicon substrates, XTEM images show that the crystallinity of the annealed polysilicon substrate does not significantly change during SiC growth. Furthermore, an investigation of the SiC/annealed-polysilicon interface using selected area diffraction (SAD) shows that an epitaxial relationship exists between the polysilicon and SiC grains.

Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

1995 ◽  
Vol 78 (8) ◽  
pp. 5136-5138 ◽  
Author(s):  
Christian A. Zorman ◽  
Aaron J. Fleischman ◽  
Andrew S. Dewa ◽  
Mehran Mehregany ◽  
Chacko Jacob ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Pressure Chemical ◽  
Sic Films

In-Situ Light-Scattering Measurements During the CVD of Polycrystalline Silicon Carbide

1991 ◽  
Vol 250 ◽  
Author(s):  
Brian W. Sheldon ◽  
Philip A. Reichle ◽  
Theodore M. Besmann
Keyword(s):  
Silicon Carbide ◽  
Light Scattering ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Scattering Spectrum ◽  
Angular Scattering ◽  
Polycrystalline Silicon Carbide ◽  
Scattering Spectra

AbstractLight-scattering was used to monitor the chemical vapor deposition of silicon carbide from methyltrichlorosilane. The nucleation and growth of the SiC features caused changes in the surface topography that altered the angular scattering spectrum that was generated with a He-Ne laser. These scattering spectra were then analyzed to obtain information about the nucleation and growth processes that are occurring.

APCVD Deposition of Si Film on SiO2 Patterned Si (111) Substrates for Solar Cells

2011 ◽  
Vol 295-297 ◽  
pp. 1211-1216
Author(s):  
Chun Yan Duan ◽  
Bin Ai ◽  
Jian Jun Lai ◽  
Chao Liu ◽  
You Jun Deng ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Standard Condition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Triangular Prism ◽  
Pressure Chemical ◽  
Si Films ◽  
Surface Morphologies

We have investigated the deposition of silicon films on SiO2 patterned Si(111) substrates by atmospheric pressure chemical vapor deposition (APCVD) under standard condition. Oxidized silicon wafers with different sizes of circular and striated patterns were used as substrates for deposition of 35 μm silicon films. The influence of surface morphologies of substrates on epitaxial Si films has been discussed. The crystalline structures of the epitaxial Si films rely on the prepatterned substrates. Triangular prism-shaped grains have been obtained after depositing silicon film on substrates with circular patterns. While different size polycrystalline silicon grains appear on surfaces of Si films grown on SiO2 regions of substrates along the axis of striated patterns. Twins defects were observed in epitaxial Si films grown on SiO2 layers of the pretreated substrates.

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