Novel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVD
2006 ◽
Vol 527-529
◽
pp. 755-758
Keyword(s):
A selective atmospheric pressure chemical vapor deposition (APCVD) process has been developed to deposit porous polycrystalline silicon carbide (poly-SiC) thin films containing a high density of through-pores measuring 50 to 70 nm in diameter. The selective deposition process involves the formation of poly-SiC films on patterned SiO2/polysilicon thin film multilayers using a carbonization-based 3C-SiC growth process. This technique capitalizes on significant differences in the nucleation of poly-SiC on SiO2 and polysilicon surfaces in order to form mechanically-durable, chemically-stable, and well anchored porous structures, thus offering a simple and potentially more versatile alternative to direct electrochemical etching.
1998 ◽
Vol 13
(2)
◽
pp. 406-412
◽
2006 ◽
Vol 45
(8A)
◽
pp. 6342-6345
◽
2020 ◽
Vol 16
(4)
◽
pp. 385-395
◽
Keyword(s):
2011 ◽
Vol 295-297
◽
pp. 1211-1216
2008 ◽
Vol 600-603
◽
pp. 875-878
Keyword(s):
1992 ◽
Vol 31
(Part 2, No. 10A)
◽
pp. L1439-L1442
◽