Characterization of Nanoporous Low-k Thin Films by Contrast Match SANS

2003 ◽  
Vol 766 ◽  
Author(s):  
Ronald C. Hedden ◽  
Barry J. Bauer ◽  
Hae-Jeong Lee
Keyword(s):  
Thin Films ◽  
Pore Size ◽  
Mass Density ◽  
Solvent Mixture ◽  
Wall Material ◽  
Ion Scattering ◽  
Low Dielectric ◽  
The Matrix ◽  
Low K

AbstractSmall-angle neutron scattering (SANS) contrast variation is used to characterize matrix properties and pore size in nanoporous low-dielectric constant (low-k) thin films. Using a vapor adsorption technique, SANS measurements are used to identify a “contrast match” solvent mixture containing the hydrogen– and deuterium-containing versions of a probe solvent. The contrast match solvent is subsequently used to conduct SANS porosimetry experiments. With information from specular X-ray reflectivity and ion scattering, the technique is useful for estimating the mass density of the matrix (wall) material and the pore size distribution. To illustrate the technique, a porous methylsilsesquioxane (MSQ) spin-on dielectric is characterized.

Electrical, Mechanical, and Structural Properties of Fluoro-Containing Poly(silsesquioxanes) Based Porous Low k Thin Films

2003 ◽  
Vol 766 ◽  
Author(s):  
Jingyu Hyeon-Lee ◽  
Jihoon Rhee ◽  
Jungbae Kim ◽  
Jin-Heong Yim ◽  
Seok Chang
Keyword(s):  
Thin Films ◽  
Pore Size ◽  
Dielectric Constants ◽  
Commercial Application ◽  
Porous Films ◽  
Low Dielectric ◽  
Nanoporous Films ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy ◽  
Low K

AbstractLow dielectric fluoro-containing poly(silsesquioxanes) (PSSQs) have been synthesized using trifluoropropyl trimethoxysilane (TFPTMS), methyl trimethoxysilane (MTMS), and 2, 4, 6, 8-tetramethyl-2, 4, 6, 8-tetra(trimethoxysilylethyl) cyclotetrasiloxane. The properties of fluorocontaining PSSQs based thin films were studied by electrical, mechanical, and structural characterization. Film was spun on a silicon substrate, baked at 150°C and 250°C for 1 minute, respectively, and cured in the furnace at 420°C for 1 hour under vacuum condition. Thermally decomposable trifluoropropyl groups of the fluoro-containing PSSQ were served as a pore generator and partially contributed to lower a dielectric constant. â-cyclodextrin (CD) was also employed as a pore generator. The concentration of the pore generator in the film was varied from 0 to 30 %. The dielectric constants of the porous PSSQ films were found to be in the range of 2.7 – 1.9 (at 100 kHz). Hardness and Young's modulus of the films were measured by nano-indentation. The elastic modulus and hardness of the porous films were well correlated with the concentration of the pore generators. Positronium Annihilation Lifetime Spectroscopy (PALS) was employed to characterize a pore size of the porous fluoro-containing PSSQ film. The pore size of the film was less than 2.2 nm. The nanoporous films showed quite promising properties for commercial application.

Deposition and Characterization of Low-Dielectric-Constant SiOC(-H) Thin Films for Interlayer Dielectrics in Multilevel Interconnections

2007 ◽  
Vol 50 (6) ◽  
pp. 1803 ◽  
Author(s):  
Rangaswamy Navamathavan ◽  
An Soo Jung ◽  
Hyun Seung Kim ◽  
Young Jun Jang ◽  
Chi Kyu Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Interlayer Dielectrics ◽  
Low Dielectric

Mechanical characterization of low-k and barrier dielectric thin films

2005 ◽  
Vol 82 (3-4) ◽  
pp. 368-373 ◽  
Author(s):  
N. Chérault ◽  
G. Carlotti ◽  
N. Casanova ◽  
P. Gergaud ◽  
C. Goldberg ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Characterization ◽  
Dielectric Thin Films ◽  
Low K

Thermal conductivity study of porous low K dielectric materials

1999 ◽  
Vol 565 ◽  
Author(s):  
Chuan Hu ◽  
Michael Morgen ◽  
Paul S. Ho ◽  
Anurag Jain ◽  
William. N. Gill ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Omega Method ◽  
3 Omega ◽  
Low Dielectric Constant Materials ◽  
Low K ◽  
Method Analysis

AbstractA quantitative characterization of the thermal properties is required to assess the thermal performance of low dielectric constant materials. Recently we have developed a technique based on the 3-omega method for measuring the thermal conductivity of porous dielectric thin films. In this paper we present the results on the measurements of thermal conductivity of thin porous films using this method. A finite element method analysis is used to evaluate the approximations used in the measurement. Two porosity-weighted thermal resistor models are proposed to interpret the results. By studying the dependence of the thermal conductivity on porosity, we are able to discuss the scaling rule of thermal conductivity. Additionally, a steady state layered heater model is used for evaluating the significance of introducing porous ILDs into an interconnect structure.

Characterization of chemical-vapor-deposited low-k thin films using x-ray porosimetry

2003 ◽  
Vol 82 (7) ◽  
pp. 1084-1086 ◽  
Author(s):  
Hae-Jeong Lee ◽  
Eric K. Lin ◽  
Barry J. Bauer ◽  
Wen-li Wu ◽  
Byung Keun Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

scholarly journals Growth and characterization of MMA/SiO2 hybrid low-k thin films for interlayer dielectric applications

2010 ◽  
Vol 33 (3) ◽  
pp. 197-201 ◽  
Author(s):  
Bhavana N. Joshi ◽  
M. A. More ◽  
A. M. Mahajan
Keyword(s):  
Thin Films ◽  
Interlayer Dielectric ◽  
Low K

Characterization of Nanoporous Low Dielectric Polysilsesquioxane Thin Films

2005 ◽  
Vol 277-279 ◽  
pp. 907-911
Author(s):  
Jingyu Hyeon Lee ◽  
Yi Yeol Lyu ◽  
Mong Sup Lee ◽  
Jin Heong Yim ◽  
Sang Youl Kim
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Elastic Modulus ◽  
Polymer Matrix ◽  
Low Dielectric

Poly(methyl-co-cyclosiloxane bearing silsesquioxane)s (P(M-co-CSSQs)) were prepared. Using poly(e-caprolactone) (PCL) as a template, PCL / P(M-co-CSSQ) nanohybrid films were fabricated. The electrical, morphological, and mechanical properties of the PCL / P(M-co-CSSQ) films were investigated. The dielectric constant of a cured PCL / P(M-co-CSSQ) film at 420°C scaled down from 2.55 to 2.05 and refractive index from 1.41 to 1.33 when 20 vol. % of the PCL was admixed with the polymer matrix. The elastic modulus and hardness of the cured PCL / P(Mco- CSSQ) (2:8, vol./vol.) film were 2.50 and 0.32 GPa, respectively, showing dependency on the PCL content.

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