Electrical, Mechanical, and Structural Properties of Fluoro-Containing Poly(silsesquioxanes) Based Porous Low k Thin Films

2003 ◽  
Vol 766 ◽  
Author(s):  
Jingyu Hyeon-Lee ◽  
Jihoon Rhee ◽  
Jungbae Kim ◽  
Jin-Heong Yim ◽  
Seok Chang
Keyword(s):  
Thin Films ◽  
Pore Size ◽  
Dielectric Constants ◽  
Commercial Application ◽  
Porous Films ◽  
Low Dielectric ◽  
Nanoporous Films ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy ◽  
Low K

AbstractLow dielectric fluoro-containing poly(silsesquioxanes) (PSSQs) have been synthesized using trifluoropropyl trimethoxysilane (TFPTMS), methyl trimethoxysilane (MTMS), and 2, 4, 6, 8-tetramethyl-2, 4, 6, 8-tetra(trimethoxysilylethyl) cyclotetrasiloxane. The properties of fluorocontaining PSSQs based thin films were studied by electrical, mechanical, and structural characterization. Film was spun on a silicon substrate, baked at 150°C and 250°C for 1 minute, respectively, and cured in the furnace at 420°C for 1 hour under vacuum condition. Thermally decomposable trifluoropropyl groups of the fluoro-containing PSSQ were served as a pore generator and partially contributed to lower a dielectric constant. â-cyclodextrin (CD) was also employed as a pore generator. The concentration of the pore generator in the film was varied from 0 to 30 %. The dielectric constants of the porous PSSQ films were found to be in the range of 2.7 – 1.9 (at 100 kHz). Hardness and Young's modulus of the films were measured by nano-indentation. The elastic modulus and hardness of the porous films were well correlated with the concentration of the pore generators. Positronium Annihilation Lifetime Spectroscopy (PALS) was employed to characterize a pore size of the porous fluoro-containing PSSQ film. The pore size of the film was less than 2.2 nm. The nanoporous films showed quite promising properties for commercial application.

Characterization of Nanoporous Low-k Thin Films by Contrast Match SANS

2003 ◽  
Vol 766 ◽  
Author(s):  
Ronald C. Hedden ◽  
Barry J. Bauer ◽  
Hae-Jeong Lee
Keyword(s):  
Thin Films ◽  
Pore Size ◽  
Mass Density ◽  
Solvent Mixture ◽  
Wall Material ◽  
Ion Scattering ◽  
Low Dielectric ◽  
The Matrix ◽  
Low K

AbstractSmall-angle neutron scattering (SANS) contrast variation is used to characterize matrix properties and pore size in nanoporous low-dielectric constant (low-k) thin films. Using a vapor adsorption technique, SANS measurements are used to identify a “contrast match” solvent mixture containing the hydrogen– and deuterium-containing versions of a probe solvent. The contrast match solvent is subsequently used to conduct SANS porosimetry experiments. With information from specular X-ray reflectivity and ion scattering, the technique is useful for estimating the mass density of the matrix (wall) material and the pore size distribution. To illustrate the technique, a porous methylsilsesquioxane (MSQ) spin-on dielectric is characterized.

Characterizing Porosity in Nanoporous Thin Films Using Positronium Annihilation Lifetime Spectroscopy

2002 ◽  
Vol 726 ◽  
Author(s):  
J.N. Sun ◽  
D. W. Gidley ◽  
Y.F. Hu ◽  
W.E. Frieze ◽  
S. Yang
Keyword(s):  
Pore Size ◽  
Size Distribution ◽  
Depth Profiling ◽  
Positron Beam ◽  
Bound State ◽  
Hybrid Films ◽  
Porous Films ◽  
Pore Characteristics ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy

AbstractDepth profiled positronium annihilation lifetime spectroscopy (PALS) has been used to probe the pore characteristics (size, distribution, and interconnectivity) in thin, porous films, including silica, organic and hybrid films. PALS has good sensitivity to and resolution of all pores (both interconnected and closed) in the size range from 0.3 nm to 30 nm, even in films buried under a diffusion barrier. In this technique a focussed beam of several keV positrons forms positronium (Ps, the electron-positron bound state) with a depth distribution that depends on the selected positron beam energy. Ps inherently localizes in the pores where its natural (vacuum) annihilation lifetime of 142 ns is reduced by collisions with the pore surfaces. The collisionally reduced Ps lifetime is correlated with pore size and is the key feature in transforming a Ps lifetime distribution into a pore size distribution. In hybrid films made porous by a degradable porogen PALS readily detects a percolation threshold with increasing porosity that represents the transition from closed pores to interconnected pores. PALS is a non-destructive, depth profiling technique with the only requirement that positrons can be implanted into the porous film where Ps can form.

Electrical/Mechanical Properties of Porous Low-k Thin Films by Using Various Supramolecule Based Porogen

2007 ◽  
Vol 124-126 ◽  
pp. 185-188
Author(s):  
Jin Heong Yim ◽  
Young Kwon Park ◽  
Jong Ki Jeon
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Electrical Properties ◽  
Pore Diameter ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Mechanical And Electrical Properties ◽  
Low K ◽  
Deposited Films

The porous SSQ (silsesquioxane) films were prepared by using alkoxy silyl substituted cyclodextrin (sCD) and methyl substituted cyclodextrin (tCD) based porogen. The mechanical and electrical properties of these deposited films were investigated for the applications as low dielectric materials. The mechanical properties of porous film by using sCD are worse than those by using tCD due to its high pore interconnection length. sCD templated porous films show almost constant pore diameter as a function of porogen concentration due to strong linear polymerization of the sCD molecules through polycondensation.

Probing Pore Characteristics in Low-K Thin Films Using Positronium Annihilation Lifetime Spectroscopy

2000 ◽  
Vol 612 ◽  
Author(s):  
D. W. Gidley ◽  
W. E. Frieze ◽  
T. L. Dull ◽  
J. N. Sun ◽  
A. F. Yee
Keyword(s):  
Pore Size Distribution ◽  
Pore Size ◽  
Size Distribution ◽  
Average Pore Size ◽  
Gas Absorption ◽  
Porous Films ◽  
Pore Characteristics ◽  
Average Pore ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy

AbstractDepth profiled positronium annihilation lifetime spectroscopy (PALS) has been used to probe the pore characteristics (size, distribution, and interconnectivity) in thin, porous films, including silica and organic-based films. The technique is sensitive to all pores (both interconnected and closed) in the size range from 0.3 nm to 300 nm, even in films buried under a diffusion barrier. PALS may be particularly useful in deducing the pore-size distribution in closed-pore systems where gas absorption methods are not available. In this technique a focussed beam of several keV positrons forms positronium (Ps, the electron-positron bound state) with a depth distribution that depends on the selected positron beam energy. Ps inherently localizes in the pores where its natural (vacuum) annihilation lifetime of 142 ns is reduced by collisions with the pore surfaces. The collisionally reduced Ps lifetime is correlated with pore size and is the key feature in transforming a Ps lifetime distribution into a pore size distribution. In thin silica films that have been made porous by a variety of methods the pores are found to be interconnected and an average pore size is determined. In a mesoporous methyl-silsesquioxane film with nominally closed pores a pore size distribution has been determined. The sensitivity of PALS to metal overlayer interdiffusion is demonstrated. PALS is a non-destructive, depth profiling technique with the only requirement that positrons can be implanted into the porous film where Ps can form.

Determining Pore Structure and Growth Mechanisms in Templated Nanoporous Low-k Films

2005 ◽  
Vol 863 ◽  
Author(s):  
Hua-Gen Peng ◽  
Richard S. Vallery ◽  
Ming Liu ◽  
William E. Frieze ◽  
David W. Gidley ◽  
...  
Keyword(s):  
Pore Structure ◽  
Pore Size ◽  
Host Matrix ◽  
3 Dimensional ◽  
Nanoporous Films ◽  
Size Growth ◽  
Positronium Annihilation Lifetime Spectroscopy ◽  
The Relationship ◽  
Low K

AbstractTemplating is one of the most popular methods for generating nanocomposite and nanoporous films and the resultant pore size and pore interconnection length depend strongly on porogen concentration/porosity among other factors. Positronium Annihilation Lifetime Spectroscopy (PALS) analysis has been performed on a series of films produced using increasing concentrations of a type of cyclodextrin (CD) porogen in a modified silsesquioxane host matrix. PALS reveals the relationship between the resulting pore structure (both size and interconnection length) and porosity, which can be used to deduce pore shape. At low porogen concentration, isolated pores are resolved, but the pore size is consistent with a cluster of two or three CD molecules, rather than an individual one. As the porosity increases, the aggregation of the porogen domains appears to be more 3-dimensional (pseudo-random) with gradual increase in pore size. Computer simulations using a random pore growth model show consistent trends for pore size growth, but the agreement is poor for interconnection length. It is a key demonstration of the usefulness of PALS in untangling the fundamental pore structure and its evolution in porosity. PALS characterization of porosity provides novel feedback in the understanding and design of nanoporous materials.

Determination of the Modulus and Hardness of Spin-on Zeolite Low-K Thin Films

2005 ◽  
Vol 880 ◽  
Author(s):  
Mark Johnson ◽  
Zijian Li ◽  
Yushan Yan ◽  
Junlan Wang
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Material Selection ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Depth Sensing ◽  
New Class ◽  
Low Dielectric ◽  
Pure Silica ◽  
Low K

AbstractWith the semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant (low-k) materials to replace traditional dense SiO2 based insulators. In order to survive the multi-step integration process and provide reliable material and structure for the desired integrated circuit (IC) functions, the new low-k materials have to be mechanically strong and stable. Thus the material selection and mechanical characterization are vital in the successful development of next generation low-k dielectrics. A new class of low-k dielectric materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus measurements of the zeolite thin films are found to be significantly higher than that of other porous silicates with similar porosity and dielectric constants. Correlations of the mechanical, microstructural and electrical properties are discussed in detail.

scholarly journals Depth-profiling plasma-induced densification of porous low-k thin films using positronium annihilation lifetime spectroscopy

2002 ◽  
Vol 81 (8) ◽  
pp. 1447-1449 ◽  
Author(s):  
Jia-Ning Sun ◽  
David W. Gidley ◽  
Yifan Hu ◽  
William E. Frieze ◽  
E. Todd Ryan
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy ◽  
Low K

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Thermal conductivity study of porous low K dielectric materials

1999 ◽  
Vol 565 ◽  
Author(s):  
Chuan Hu ◽  
Michael Morgen ◽  
Paul S. Ho ◽  
Anurag Jain ◽  
William. N. Gill ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Omega Method ◽  
3 Omega ◽  
Low Dielectric Constant Materials ◽  
Low K ◽  
Method Analysis

AbstractA quantitative characterization of the thermal properties is required to assess the thermal performance of low dielectric constant materials. Recently we have developed a technique based on the 3-omega method for measuring the thermal conductivity of porous dielectric thin films. In this paper we present the results on the measurements of thermal conductivity of thin porous films using this method. A finite element method analysis is used to evaluate the approximations used in the measurement. Two porosity-weighted thermal resistor models are proposed to interpret the results. By studying the dependence of the thermal conductivity on porosity, we are able to discuss the scaling rule of thermal conductivity. Additionally, a steady state layered heater model is used for evaluating the significance of introducing porous ILDs into an interconnect structure.

New Carbon-bridged Hybrid Polymers for Low-k Materials

2005 ◽  
Vol 863 ◽  
Author(s):  
Bum-Gyu Choi ◽  
Byung Ro Kim ◽  
Myung-Sun Moon ◽  
Jung-Won Kang ◽  
Min-Jin Ko
Keyword(s):  
Mechanical Properties ◽  
Hybrid Materials ◽  
Chemical Mechanical Planarization ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Metal Line ◽  
Inorganic Hybrid ◽  
Low Dielectric ◽  
Continuous Stiffness Measurement ◽  
Low K

AbstractReducing interline capacitance and line resistance is required to minimize RC delays, reduce power consumption and crosstalk below 100nm node technology. For this purpose, various inorganic- and organic polymers have been tested to reduce dielectric constants in parallel with the use of copper as metal line. Lowering the dielectric constants, in particular, causes the detrimental effect on mechanical properties, and then leads to film damage and/or delamination during chemical-mechanical planarization CMP) or repeated thermal cure cycles. To overcome this issue, new carbon-bridged hybrid materials synthesized by organometallic silane precursors and sol-gel reaction are proposed.In this work, we have developed new organic-inorganic hybrid low-k dielectrics with linear or cyclic carbon bridged structures. The differently bridged carbon structures were formed by a controlled reaction. 1H NMR, 29Si NMR analysis and GC/MSD analysis were conducted for the structural characterization of new hybrid low-k dielectric. The mechanical and dielectric properties of these hybrid materials were characterized by using nanoindentation with continuous stiffness measurement and Al dot MIS techniques. The results indicated that these organic-inorganic hybrid materials were very promising polymers for low-k dielectrics that had low dielectric constants with high thermal and mechanical properties. It has been also demonstrated that electrical and mechanical properties of the hybrid films could be tailored by copolymerization with PMSSQ and through the introduction of porogen.

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