First-principles study of the electronic structure of Pb(ZrTiNb)O3 (PZTN) systems

2003 ◽  
Vol 784 ◽  
Author(s):  
Hiromu Miyazawa ◽  
Takamitsu Higuchi ◽  
Taku Aoyama ◽  
Takeshi Kijima ◽  
Eiji Natori ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Oxygen Vacancy ◽  
Leakage Current ◽  
First Principles ◽  
Nearest Neighbor ◽  
High Reliability ◽  
Orbital Energy ◽  
Low Leakage ◽  
Bandgap Narrowing ◽  
Low Leakage Current

ABSTRACTUsing first principles calculations, we have investigated the electronic structure of Pb(ZrTiNb)O3 (PZTN), a system with a low leakage current and high reliability in thin films. We proposed that in PZTN, the oxygen vacancy is suppressed due to the addition of a Nb atom at the B site and that this change prevents a bandgap narrowing which would enhance the leakage current. The oxygen vacancy in the perovskite structure reduces the bandgap because it lowers the d orbital energy of the nearest-neighbor transition metal through the Madelung potential; this bandgap narrowing induces the leakage current in conventional Pb(ZrTi)O3 (PZT) systems with the Shottky type Pb-O deficit. In contrast, the PZTN systems, which also have the Pb deficit but lack the oxygen vacancy, can maintain the bandgap, and attain a low leakage current.

Characterization of Low Temperature Polysilicon TFTs with Self-Aligned Graded LDD Structure

2001 ◽  
Vol 685 ◽  
Author(s):  
Ching-Wei Lin ◽  
Li-Jing Cheng ◽  
Yin-Lung Lu ◽  
Huang-Chung Cheng
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
High Speed ◽  
High Reliability ◽  
Activation Process ◽  
Active Matrix ◽  
Dopant Activation ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

AbstractA simple process sequence for fabrication of low temperature polysilicon (LTPS) TFTs with self-aligned graded LDD structure was demonstrated. The graded LDD structure was self-aligned by side-etch of Al under the photo-resist followed by excimer laser irradiation for dopant activation and laterally diffusion. The graded LDD polysilicon TFTs were suitable for high-speed operation and active matrix switches applications because they possessed low-leakage-current characteristic without sacrificing driving capability significantly and increasing overlap capacitance. The leakage current of graded LDD polysilicon TFTs at Vd = 5V and Vg = −10V could attain to below 1pA/μm without any hygrogenation process, when proper LDD length and laser activation process were applied. The on/off current ratios of these devices were also above 108. Furthermore, due to graded dopant distribution in LDD regions, the drain electric field could be reduced further, and as a result, graded LDD polysilicon TFTs provided high reliability for high voltage operation.

DIELECTRIC FORMATION AND ELECTRICAL CHARACTERIZATION OF SINTERED TANTALUM SLUGS

2007 ◽  
Vol 21 (02n03) ◽  
pp. 123-128 ◽  
Author(s):  
R. GOVINDAIAH ◽  
T. BALAJI ◽  
ARBIND KUMAR ◽  
N. PARASURAM ◽  
Y. PURUSHOTHAM ◽  
...  
Keyword(s):  
Leakage Current ◽  
High Reliability ◽  
Chemical Properties ◽  
Electrical Characterization ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Lcr Meter ◽  
Physical And Chemical ◽  
And Chemical Properties

The present electronic industry requires capacitors having high capacitance with lower volume and space, high reliability and low leakage current. The solid tantalum capacitor ideally meets such requirements. In the present paper, the electrical characterization of tantalum anodes prepared from sodium reduced tantalum powder has been described. The capacitance, DC leakage current are measured for tantalum anodes made with different particle sizes of powders using the LCR Meter and DC Leakage Tester and compared with the physical and chemical properties. Interestingly, it was found that the DC leakage current decreases with decrease in particle size on contrary to the surface area. Besides, a trade-off appears imminent to establish the formation voltage and DC leakage current relationship.

scholarly journals Identification of two-dimensional layered dielectrics from first principles

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Mehrdad Rostami Osanloo ◽  
Maarten L. Van de Put ◽  
Ali Saadat ◽  
William G. Vandenberghe
Keyword(s):  
Leakage Current ◽  
First Principles ◽  
Gate Dielectrics ◽  
Oxide Thickness ◽  
Dielectric Constants ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Out Of Plane ◽  
Layered Dielectrics ◽  
Optical Dielectric

AbstractTo realize effective van der Waals (vdW) transistors, vdW dielectrics are needed in addition to vdW channel materials. We study the dielectric properties of 32 exfoliable vdW materials using first principles methods. We calculate the static and optical dielectric constants and discover a large out-of-plane permittivity in GeClF, PbClF, LaOBr, and LaOCl, while the in-plane permittivity is high in BiOCl, PbClF, and TlF. To assess their potential as gate dielectrics, we calculate the band gap and electron affinity, and estimate the leakage current through the candidate dielectrics. We discover six monolayer dielectrics that promise to outperform bulk HfO2: HoOI, LaOBr, LaOCl, LaOI, SrI2, and YOBr with low leakage current and low equivalent oxide thickness. Of these, LaOBr and LaOCl are the most promising and our findings motivate the growth and exfoliation of rare-earth oxyhalides for their use as vdW dielectrics.

Low Temperature Tantalum Pentoxide Thin Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Kee-Won Kwon ◽  
Chang-Seok Kang ◽  
Tai-su Park ◽  
Yong-Bin Sun ◽  
Neal Sandler ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Single Phase ◽  
High Reliability ◽  
Current Source ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Temperature Deposition ◽  
Post Deposition

ABSTRACTTa2O5 films of high reliability and low leakage current density were obtained by low temperature deposition and subsequent high temperature oxygen anneal. At higher temperatures than 410°C, growth was governed by the formation of radicals in gas phase and oxidation on the surface, while at lower temperatures by the dissociation of reactant on the surface of substrates. As a result, the films deposited at lower temperatures had undensified structures, and contained more carbon that might be a leakage current source in Ta2O5 film. During post-deposition heat treatment in 800°C oxidating ambient, carbon was removed away and silicon was diffused from the substrate into the Ta2O5 film efficiently for its as-grown porous structure. After oxygen anneal, low temperature films get denser and are crystallized to mixed phase of orthorhombic and hexagonal Ta2O5, while high temperature films crystallized to orthorhombic single phase. Ta2O5 capacitor with low temperature films showed superior leakage characteristics applicable to sub-half micron memory devices.

High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie
Keyword(s):  
Leakage Current ◽  
Co Doping ◽  
High Nonlinearity ◽  
Low Leakage ◽  
Low Leakage Current

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

2018 ◽  
Vol 65 (2) ◽  
pp. 680-686 ◽  
Author(s):  
Cheng-Jung Lee ◽  
Ke-Jing Lee ◽  
Yu-Chi Chang ◽  
Li-Wen Wang ◽  
Der-Wei Chou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Organic Transistors ◽  
Barium Zirconate ◽  
Low Leakage ◽  
Low Leakage Current

High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

2021 ◽  
pp. 106413
Author(s):  
Yuexin Yang ◽  
Zhuohui Xu ◽  
Tian Qiu ◽  
Honglong Ning ◽  
Jinyao Zhong ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K

Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Wafer Level ◽  
Current Ratio ◽  
Field Plate ◽  
Low Leakage ◽  
Large Size ◽  
Forward Current ◽  
Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

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