Low Temperature Tantalum Pentoxide Thin Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Kee-Won Kwon ◽  
Chang-Seok Kang ◽  
Tai-su Park ◽  
Yong-Bin Sun ◽  
Neal Sandler ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Single Phase ◽  
High Reliability ◽  
Current Source ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Temperature Deposition ◽  
Post Deposition

ABSTRACTTa2O5 films of high reliability and low leakage current density were obtained by low temperature deposition and subsequent high temperature oxygen anneal. At higher temperatures than 410°C, growth was governed by the formation of radicals in gas phase and oxidation on the surface, while at lower temperatures by the dissociation of reactant on the surface of substrates. As a result, the films deposited at lower temperatures had undensified structures, and contained more carbon that might be a leakage current source in Ta2O5 film. During post-deposition heat treatment in 800°C oxidating ambient, carbon was removed away and silicon was diffused from the substrate into the Ta2O5 film efficiently for its as-grown porous structure. After oxygen anneal, low temperature films get denser and are crystallized to mixed phase of orthorhombic and hexagonal Ta2O5, while high temperature films crystallized to orthorhombic single phase. Ta2O5 capacitor with low temperature films showed superior leakage characteristics applicable to sub-half micron memory devices.

Characterization of Low Temperature Polysilicon TFTs with Self-Aligned Graded LDD Structure

2001 ◽  
Vol 685 ◽  
Author(s):  
Ching-Wei Lin ◽  
Li-Jing Cheng ◽  
Yin-Lung Lu ◽  
Huang-Chung Cheng
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
High Speed ◽  
High Reliability ◽  
Activation Process ◽  
Active Matrix ◽  
Dopant Activation ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

AbstractA simple process sequence for fabrication of low temperature polysilicon (LTPS) TFTs with self-aligned graded LDD structure was demonstrated. The graded LDD structure was self-aligned by side-etch of Al under the photo-resist followed by excimer laser irradiation for dopant activation and laterally diffusion. The graded LDD polysilicon TFTs were suitable for high-speed operation and active matrix switches applications because they possessed low-leakage-current characteristic without sacrificing driving capability significantly and increasing overlap capacitance. The leakage current of graded LDD polysilicon TFTs at Vd = 5V and Vg = −10V could attain to below 1pA/μm without any hygrogenation process, when proper LDD length and laser activation process were applied. The on/off current ratios of these devices were also above 108. Furthermore, due to graded dopant distribution in LDD regions, the drain electric field could be reduced further, and as a result, graded LDD polysilicon TFTs provided high reliability for high voltage operation.

High-Temperature Trench Capacitors, Using Thin-Film ALD Dielectrics

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000130-000133 ◽  
Author(s):  
Dorothee Dietz ◽  
Yusuf Celik ◽  
Andreas Goehlich ◽  
Holger Vogt ◽  
Holger Kappert
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Automobile Industry ◽  
Elevated Temperatures ◽  
Atomic Layer ◽  
Operating Voltage ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
Soft Breakdown

High-temperature passive electronic becomes more and more important, e.g. in the field of deep drilling, aerospace or in automobile industry. For these applications, capacitors are needed, which are able to withstand temperatures up to 300 °C, which exhibit a low leakage current at elevated temperatures, a breakdown voltage above the intended operating voltage and a high capacitive density value. In this paper, investigations of 3D-integration and atomic layer deposition (ALD) techniques to achieve these features are presented. A highly n-doped Si-substrate acts as a bottom electrode. Medium- and high-k dielectrics represent the insulator and the upper electrode consists of Ru, TiN or TiAlCN. The materials can be used at elevated temperatures. At room temperature, the leakage current is less than 10 pA/mm2 without showing a soft-breakdown up to ± 15 V, indicating the absence of Fowler-Nordheim tunneling. At 300 °C and at 3 V the leakage current amounts about 1 nA/mm2 and at 5 V a soft-breakdown is detected.

Low Temperature Deposition of High Dielectric Constant Thin Films for Decoupling Capacitor Applications

1990 ◽  
Vol 203 ◽  
Author(s):  
P. Li ◽  
B. Gittleman ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Promising Alternative ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Annealing Effects ◽  
Temperature Deposition ◽  
High Dielectric

ABSTRACTHigh dielectric constant thin films for packaging applications were studied. Compared with polycrystalline or epitaxial ferroelectric thin films amorphous ferroelectric films are a promising alternative because of their ease of processing and low leakage current. Reactive Partially Ionized Beam deposition (RPIB) offers a new approach to deposit high dielectric constant films at a low substrate temperature. As an example, the growth of amorphous BaTiOs thin films using RPIB deposition is described. The films were characterized in terms of dielectric constant and leakage current. The annealing effects on the film properties are also discussed.

Ultra-Thin Sputtered Pzt Films for Ulsi Drams

1993 ◽  
Vol 310 ◽  
Author(s):  
Jiyoung Kim ◽  
C. Sudhama ◽  
Rajesh Khamankar ◽  
Jack Lee
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Perovskite Phase ◽  
Storage Capacitor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Pzt Films

AbstractIn this work, a high-temperature deposition technique has been developed for ultra-thin sputtered PZT films for ULSI DRAM (<256Mb) storage capacitor applications. In contrast to the previously developed low-temperature (200°C) deposition, deposition at high-temperature (400°C) yields a desirable reduction in grain size of the perovskite phase. The thickness of PZT films has been reduced to less than 30nm with high charge storage density (∼30μC/cm2) and low leakage current density. An optimized 65nm PZT thin film was found to have an equivalent SiO2 thickness of 1.9Å and a leakage current density of less than 10−6 A/cm2 under 2V operation.

Single‐phase transformerless bi‐directional inverter with high efficiency and low leakage current

2014 ◽  
Vol 7 (2) ◽  
pp. 451-458 ◽  
Author(s):  
Sung‐Ho Lee ◽  
Kyu‐Tae Kim ◽  
Jung‐Min Kwon ◽  
Bong‐Hwan Kwon
Keyword(s):  
Leakage Current ◽  
Single Phase ◽  
High Efficiency ◽  
Low Leakage ◽  
Low Leakage Current
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