High-Temperature PbTe Thin Films for Use in Cascade Thermoelectric Power Generation

2003 ◽  
Vol 793 ◽  
Author(s):  
J.B. Posthill ◽  
J.C. Caylor ◽  
P.D. Crocco ◽  
T.S. Colpitts ◽  
R. Venkatasubramanian
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Power Generation ◽  
High Temperature ◽  
Ambient Temperature ◽  
Thermoelectric Power ◽  
Thermal Evaporation ◽  
Potential Candidate ◽  
Substrate Orientation ◽  
Subtle Effect

ABSTRACTPbTe-based thin films were deposited by thermal evaporation at temperatures ranging from ambient temperature to 430°C on different vicinal GaAs (100) substrates and BaF2 (111). This materials system is being evaluated as a potential candidate thermoelectric material for a mid-temperature stage in a cascade power generation module. Pure PbTe, PbSe, and multilayer PbTe/PbSe films were investigated. All films deposited on different vicinal GaAs (100) substrates were found to be polycrystalline when deposited at 250°C or lower. A subtle effect of substrate orientation and multilayer periodicity appears to contribute to the more randomly oriented polycrystallinity, which also lowers the thermal conductivity. These results are compared with PbTe epitaxial results on BaF2 (111).

Metal-like electrical conductivity in LaxSr2−xTiMoO6 oxides for high temperature thermoelectric power generation

2017 ◽  
Vol 46 (18) ◽  
pp. 5872-5879 ◽  
Author(s):  
Mandvi Saxena ◽  
Tanmoy Maiti
Keyword(s):  
Power Generation ◽  
Electrical Conductivity ◽  
High Temperature ◽  
Energy Conversion ◽  
Thermoelectric Power ◽  
Conversion Efficiency ◽  
Energy Conversion Efficiency ◽  
Power Generators ◽  
Thermoelectric Power Generation

Increasing electrical conductivity in oxides, which are inherently insulators, can be a potential route in developing oxide-based thermoelectric power generators with higher energy conversion efficiency.

scholarly journals Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Sarita Boolchandani ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Temperature Variation ◽  
Thermal Evaporation ◽  
Low Cost ◽  
High Vacuum ◽  
Power Measurement ◽  
Thermal Evaporation Method ◽  
Evaporation Method

The indium selenium (InSe) bilayer thin films of various thickness ratios, InxSe(1-x) (x = 0.25, 0.50, 0.75), were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe) and aluminum selenide (AlSe) bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

scholarly journals Understanding the asymmetrical thermoelectric performance for discovering promising thermoelectric materials

2019 ◽  
Vol 5 (6) ◽  
pp. eaav5813 ◽  
Author(s):  
Hangtian Zhu ◽  
Jun Mao ◽  
Zhenzhen Feng ◽  
Jifeng Sun ◽  
Qing Zhu ◽  
...  
Keyword(s):  
Power Generation ◽  
High Temperature ◽  
Thermoelectric Power ◽  
Conversion Efficiency ◽  
Thermoelectric Materials ◽  
The Other ◽  
Thermoelectric Performance ◽  
Cold Side ◽  
P Type ◽  
The Relationship

Thermoelectric modules, consisting of multiple pairs of n- and p-type legs, enable converting heat into electricity and vice versa. However, the thermoelectric performance is often asymmetrical, in that one type outperforms the other. In this paper, we identified the relationship between the asymmetrical thermoelectric performance and the weighted mobility ratio, a correlation that can help predict the thermoelectric performance of unreported materials. Here, a reasonably high ZT for the n-type ZrCoBi-based half-Heuslers is first predicted and then experimentally verified. A high peak ZT of ~1 at 973 K can be realized by ZrCo0.9Ni0.1Bi0.85Sb0.15. The measured heat-to-electricity conversion efficiency for the unicouple of ZrCoBi-based materials can be as high as ~10% at the cold-side temperature of ~303 K and at the hot-side temperature of ~983 K. Our work demonstrates that the ZrCoBi-based half-Heuslers are highly promising for the application of mid- and high-temperature thermoelectric power generation.

The effect of Er doping on the crystallization of Ge1−xSnx thin films

2021 ◽  
pp. 2150337
Author(s):  
Baijie Xia ◽  
Zhaoshi Dong ◽  
Chunwang Zhao
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
High Temperature ◽  
Crystallization Temperature ◽  
Thermal Evaporation ◽  
Er Doping ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Er Doped

The Er-doped [Formula: see text] thin films with different Sn contents were prepared on Ge buffered Si substrates by thermal evaporation. The effect of Er doping on the crystallization of [Formula: see text] films at different annealing temperatures was studied. It is demonstrated that Er doping can increase the critical crystallization temperature and greatly reduce the surface roughness of high temperature annealed [Formula: see text] thin films.

Growth and characterization of Ag–Al2O3 composites thin films for thermoelectric power generation applications

2021 ◽  
Author(s):  
Inaam Ullah ◽  
M. Tamseel ◽  
Mongi Amami ◽  
Muhammad Rizwan Javed ◽  
K. Javaid ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Generation ◽  
Thermoelectric Power ◽  
Thermoelectric Power Generation

High-temperature Thermoelectric Properties of the Ca1-xBixMnO3 System

2002 ◽  
Vol 17 (5) ◽  
pp. 1092-1095 ◽  
Author(s):  
Gaojie Xu ◽  
Ryoji Funahashi ◽  
Ichiro Matsubara ◽  
Masahiro Shikano ◽  
Yuqin Zhou
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Thermoelectric Power ◽  
Power Factor ◽  
X Ray Diffraction ◽  
Absolute Value ◽  
X Ray ◽  
Figures Of Merit ◽  
Bi Doping

Polycrystalline samples of Ca1-xBixMnO3 (0.02 ≤ x ≤ 0.20) were studied by means of x-ray diffraction, electrical resistivity (ρ), thermoelectric power (S), and thermal conductivity (κ) at high temperature. Bi doping leads to the lattice parameters a, b, and c increasing. And the ρ and the absolute value of S decrease rapidly with Bi doping. The largest power factor, S2/ρ, is obtained in the x = 0.04 sample, which is 3.6×10−4 Wm−1 K−2 at 400 K. The figures of merit (Z = S2/ρκ) for this sample and 1.0×10−4 and 0.86 × 10−4 K−1 at 600 and 1000 K, respectively.

Sign in / Sign up

Export Citation Format

Share Document