The effect of Er doping on the crystallization of Ge1−xSnx thin films
Keyword(s):
The Er-doped [Formula: see text] thin films with different Sn contents were prepared on Ge buffered Si substrates by thermal evaporation. The effect of Er doping on the crystallization of [Formula: see text] films at different annealing temperatures was studied. It is demonstrated that Er doping can increase the critical crystallization temperature and greatly reduce the surface roughness of high temperature annealed [Formula: see text] thin films.
2006 ◽
Vol 321-323
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pp. 1336-1339
2008 ◽
Vol 368-372
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pp. 1814-1816
2012 ◽
Vol 26
(31)
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pp. 1250137
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Keyword(s):
Keyword(s):
2011 ◽
Vol 277
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pp. 1-10
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