Investigation of the Properties of Electrochemically Deposited Semiconductor Materials for Thermoelectric Applications

2003 ◽  
Vol 793 ◽  
Author(s):  
C.-K. Huang ◽  
J.A. Herman ◽  
N. Myung ◽  
J. R. Lim ◽  
J.-P. Fleurial
Keyword(s):  
Seebeck Coefficient ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Direction Parallel ◽  
Seebeck Coefficients ◽  
Before And After ◽  
Electrochemically Deposited ◽  
High Seebeck Coefficient ◽  
Preliminary Study ◽  
P Type

ABSTRACTAt JPL, it is our desire to fabricate thermoelectric micro-devices for power generation and cooling applications using an electrochemical deposition (ECD) technique. We believe that the performance of our current micro-device developed is limited by the properties of the ECD materials. Therefore, the objective of this study is to develop ECD methods for obtaining n-type Bi2Te3 and p-type Bi2-xSbxTe3 thermoelectric materials with near bulk properties, as well as optimizing morphology and transport properties. The films of Bi2Te3 and Bi2-xSbxTe3 were initially obtained under various ECD conditions. Seebeck coefficients and transport properties were then measured along the direction parallel to the substrates before and after annealing at 250°C for 2hrs. From the data obtained, ECD n-Bi2Te3 material can achieve a high Seebeck coefficient (-189 μV/K) when it is deposited at –200 mV vs. SCE. The in-plane resistivity, in-plane mobility, and carrier concentration are 3.0 mohm-cm, 31 cm2 V−1 S−1, and 6.79 × 1019 cm−3, respectively. As for the p-type Bi2-xSbxTe3, it is possible to achieve a high Seebeck coefficient (+295 μV/K) when it is deposited at 0.3 mA/cm2. The in-plane resistivity, in-plane mobility, and carrier concentration are 9.8374 mohm-cm, 66.58 cm2 V−1 S−1, and 9.54 × 1018 cm−3, respectively. From the results of our preliminary study, we have found the conditions for depositing high quality Bi2Te3 and Bi2-xSbxTe3 materials with thermoelectric properties comparable to those of their state-of-the-art bulk samples.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

Electronic Transport Properties of Hot-Pressed B6Si

1987 ◽  
Vol 97 ◽  
Author(s):  
C. Wood ◽  
D. Emin ◽  
R. S. Feigelson ◽  
I. D. R. Mackinnon
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Anomalous Behavior ◽  
Nominal Composition ◽  
Electronic Transport Properties ◽  
Increasing Temperature ◽  
P Type

ABSTRACTMeasurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

Improvement on Thermoelectric Characteristics of Layered Nanostructure by Ion Beam Bombardment

2006 ◽  
Vol 929 ◽  
Author(s):  
Bangke Zheng ◽  
S. Budak ◽  
C. Muntele ◽  
Z. Xiao ◽  
S. Celaschi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Electric Conductivity ◽  
Ion Beam ◽  
Thermo Electric ◽  
Super Lattice ◽  
Before And After ◽  
The Cross ◽  
Nano Cluster ◽  
P Type

ABSTRACTWe made p-type nanoscale super lattice thermoelectric cooling devices which consist of multiple periodic layers of Si1−x Gex / Si, The thickness of each layer ranges between 10 and 50 nm. The super lattice was bombarded by 5 MeV Si ion with different fluencies aiming to form nano-cluster quantum dot structures. We estimated the thermo-electric efficiency of the so fabricated devices, measuring the thin film cross plane thermal conductivity by the 3rd harmonic method, measuring the cross plane Seebeck coefficient, and finally measuring the cross plane electric conductivity before and after ion bombardment. As predicted, the thermo-electric Figure of Merit of the films increases with increasing Si ion fluencies. In addition to the effect of quantum well confinement of the phonon transmission, the nano-scale crystal quantum dots produced by the incident Si beam further adversely affects the thermal conductivity by absorbing and dissipating phonon along the lattice, and therefore further reduces the cross plane thermal conductivity, This process increases the electron density of state therefore increasing Seebeck coefficient, and the electric conductivity.

scholarly journals Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Electronic Band Structure ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
P Type ◽  
Insight Into

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

Thermoelectric properties control of Half-Heusler compounds by lattice defects and interfaces introduced based on the close relationship with Heusler compounds

2015 ◽  
Vol 1760 ◽  
Author(s):  
Yoshisato Kimura ◽  
Yaw-Wang Chai ◽  
Toshinori Oniki ◽  
Takahiko Itagaki ◽  
Shinya Otani
Keyword(s):  
Seebeck Coefficient ◽  
Lattice Defects ◽  
Heusler Compounds ◽  
Nano Structure ◽  
Heusler Phase ◽  
Site Occupation ◽  
Seebeck Coefficients ◽  
Close Relationship ◽  
Vacancy Site ◽  
P Type

ABSTRACTHalf-Heusler MNiSn (M=Ti, Zr, Hf) compounds are well-known, excellent n-type thermoelectric materials. The n-type Seebeck coefficients of ZrNiSn are reduced because of the precipitation of the metallic Heusler ZrNi2Sn phase. An excellent n-type Seebeck coefficient can be converted to p-type based on the vacancy site occupation by the solute Co atoms in the half-Heusler TiNiSn phase as well as ZrNiSn. The Heusler phase precipitates, including their precursor nano-structure in the half-Heusler matrix and the vacancy site occupation of the half-Heusler phase, are regarded as lattice defects based on the crystallographically and thermodynamically close relationship between half-Heusler and Heusler phases.

Enhanced Charge Carrier Concentration of SiC/CNT With N- and P-Type Doping Agents

2014 ◽  
Author(s):  
Kyle Edwards ◽  
Mujibur Khan ◽  
Rafael Quirino ◽  
Brenda Beckler ◽  
Saheem Absar
Keyword(s):  
Charge Carrier ◽  
Carrier Concentration ◽  
Raman Spectra ◽  
Structural Changes ◽  
Charge Carrier Concentration ◽  
X Ray ◽  
Seebeck Coefficients ◽  
P Type ◽  
Conductive Properties ◽  
Walled Carbon Nanotubes

Single-walled Carbon nanotubes (SWCNTs) have been shown to have excellent conductive properties. SWCNTs were dispersed in a SiC nanoparticle matrix to form a homogeneous mixture that is both mechanically durable and conductive. The SWCNT amount has been varied. SiC/SWCNT mixtures were then doped with various N- and P-type agents, and the resulting samples were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD). Raman spectra of the samples were also measured for evidence of structural changes. Seebeck coefficients were measured for the doped samples demonstrating the change in thermoelectric properties. Shifts in the G peak (1580.6 cm-1) of the Raman spectra of the samples provides evidence of an increase in charge carrier concentration in the doped samples, correlating well with the Seebeck coefficient results.

Band Structures and Transport Properties of Half-Heusler Compounds NbMSb (M = Fe, Ru)

2016 ◽  
Vol 847 ◽  
pp. 171-176
Author(s):  
Teng Fang ◽  
Shu Qi Zheng ◽  
Hong Chen ◽  
Peng Zhang
Keyword(s):  
Transport Properties ◽  
Valence Band Maximum ◽  
Thermoelectric Generators ◽  
Heusler Compounds ◽  
Boltzmann Transport ◽  
Band Structures ◽  
Seebeck Coefficients ◽  
Electrical Conductivities ◽  
Scattering Time ◽  
P Type

The band structures and transport properties of Half-Heusler compounds NbFeSb and NbRuSb were studied using ab initio calculations and the Boltzmann transport equation with constant scattering time approximation (CSTA). Both compounds were identified as good p-type thermoelectric materials because of the combination of heavy and light bands in the valence band maximum (VBM). The Seebeck coefficients for NbRuSb were lower than that for NbFeSb; while the electrical conductivities for NbRuSb were little higher than that for NbFeSb. Consequently, the power factors in the p-type regimes for both compounds were similar at a given temperature. NbFeSb and NbRuSb could be efficient materials for thermoelectric generators based on the results in the present investigation.

scholarly journals Влияние легирования ванадием на термоэлектрические свойства сплавов Гейслера Fe-=SUB=-2-=/SUB=-Ti-=SUB=-1-x-=/SUB=-V-=SUB=-x-=/SUB=-Sn

2019 ◽  
Vol 53 (6) ◽  
pp. 777
Author(s):  
А.И. Таранова ◽  
А.П. Новицкий ◽  
А.И. Воронин ◽  
С.В. Таскаев ◽  
В.В. Ховайло
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Experimental Study ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Pristine Sample ◽  
Electrical Conductivity Behavior ◽  
P Type ◽  
Conductivity Behavior

In this work the results of an experimental study of Fe2Ti1-xVxSn alloys (x = 0; 0.06; 0.15; 0.2) are presented. According to the temperature dependencies of the electrical conductivity, Seebeck coefficient and thermal conductivity, it is established, that the studied compositions exhibit transport properties typical for semiconductors. The substitution of V at the Ti site leads to a change of the p-type electrical conductivity behavior to n-type; the pristine sample of Fe2TiSn has the best thermoelectric properties.

scholarly journals Thermoelectric Performance of Polypropylene/Carbon Nanotube/Ionic Liquid Composites and Its Dependence on Electron Beam Irradiation

2022 ◽  
Vol 6 (1) ◽  
pp. 25
Author(s):  
Oliver Voigt ◽  
Beate Krause ◽  
Petra Pötschke ◽  
Michael T. Müller ◽  
Sven Wießner
Keyword(s):  
Electron Beam ◽  
Seebeck Coefficient ◽  
Electron Beam Irradiation ◽  
Single Walled Carbon Nanotubes ◽  
Electron Beam Treatment ◽  
Beam Irradiation ◽  
Seebeck Coefficients ◽  
Treated Sample ◽  
P Type ◽  
Walled Carbon Nanotubes

The thermoelectric behavior of polypropylene (PP) based nanocomposites containing single walled carbon nanotubes (SWCNTs) and five kinds of ionic liquids (Ils) dependent on composite composition and electron beam irradiation (EB) was studied. Therefore, several samples were melt-mixed in a micro compounder, while five Ils with sufficiently different anions and/or cations were incorporated into the PP/SWCNT composites followed by an EB treatment for selected composites. Extensive investigations were carried out considering the electrical, thermal, mechanical, rheological, morphological and, most significantly, thermoelectric properties. It was found that it is possible to prepare n-type melt-mixed polymer composites from p-type commercial SWCNTs with relatively high Seebeck coefficients when adding four of the selected Ils. The highest Seebeck coefficients achieved in this study were +49.3 µV/K (PP/2 wt.% SWCNT) for p-type composites and −27.6 µV/K (PP/2 wt.% SWCNT/4 wt.% IL type AMIM Cl) for n-type composites. Generally, the type of IL is decisive whether p- or n-type thermoelectric behavior is achieved. After IL addition higher volume conductivity could be reached. Electron beam treatment of PP/SWCNT leads to increased values of the Seebeck coefficient, whereas the EB treated sample with IL (AMIM Cl) shows a less negative Seebeck coefficient value.

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