A photothermal method of simultaneous determination of ultra-shallow junction depth and abruptness

2004 ◽  
Vol 810 ◽  
Author(s):  
Alex Salnick ◽  
Lena Nicolaides ◽  
Jon Opsal ◽  
Amitabh Jain ◽  
Duncan Rogers ◽  
...  
Keyword(s):  
Simultaneous Determination ◽  
Mass Spectroscopy ◽  
Junction Depth ◽  
Semiconductor Wafer ◽  
Photothermal Method ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Secondary Ion ◽  
Better Than

ABSTRACTThermal wave (TW) studies of ultra-shallow junctions (USJ) formed by ion implantation into a semiconductor wafer followed by rapid thermal annealing (RTP) are described. It is shown that using the TW technique allows for a simultaneous determination of the most important USJ parameters – depth and profile abruptness. Experimental results for junction depth and abruptness obtained on a set of B+-implanted, RTP-annealed USJ samples show better than 0.99 correlations to the corresponding secondary ion mass spectroscopy (SIMS) data.

Determination of Ca diffusion in YBCO films by Secondary Ion Mass Spectroscopy

2003 ◽  
Vol 164 (3-4) ◽  
pp. 149-158 ◽  
Author(s):  
A.V. Berenov ◽  
S.R. Foltyn ◽  
C.W. Schneider ◽  
P.A. Warburton ◽  
J.L. MacManus-Driscoll
Keyword(s):  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Ybco Films ◽  
Secondary Ion

SIMS Determination of MG+ and AS+ Range Profiles in Photoresist and Polyimide Implant Masks.

1989 ◽  
Vol 147 ◽  
Author(s):  
D. L. Dugger ◽  
M. B. Stern ◽  
T. M. Rubico
Keyword(s):  
Standard Deviation ◽  
Mass Spectroscopy ◽  
Range Data ◽  
Profile Data ◽  
Projected Range ◽  
Range Profile ◽  
P Type ◽  
Secondary Ion ◽  
Good Agreement

AbstractThe distribution of Mg+ (a p-type dopant for GaAs) and As+ (an p-type dopant for Si) implanted into both photoresist (PR) and polyimide (PI) have been determined experimentally. Range data of Mg ions at 200 keV and 300 keV and As ions at 150 keV have been measured by Secondary Ion Mass Spectroscopy (SIMS). SIMS values for the projected range Rp and the standard deviation ARp were compared to range profile data calculated using the Projected Range Algorithm (PRAL) of Biersack [1] as well as the standard LSS theory [2]. While the values for Rp calculated from the PRAL model generally agreed within 10% of the SIMS values, the calculations underestimated Rp for PR but were in good agreement for PI. The LSS calculations underestimated Rp in both materials.

Ultra Shallow Junctions Optimization with Non Doping Species Co-implantation

2006 ◽  
Vol 912 ◽  
Author(s):  
Nathalie Cagnat ◽  
Cyrille Laviron ◽  
Daniel Mathiot ◽  
Blandine Duriez ◽  
Julien Singer ◽  
...  
Keyword(s):  
Experimental Study ◽  
Integrated Circuits ◽  
Dopant Concentration ◽  
Junction Depth ◽  
Complex Interactions ◽  
Implantation Damage ◽  
Efficient Diffusion ◽  
Shallow Junctions ◽  
Light Ions ◽  
Ultra Shallow Junctions

AbstractThe permanent decrease of the transistor size to improve the performances of integrated circuits must be accompanied by a permanent decrease of the depth of the source-drain junctions. At the same time, in order to keep acceptable sheet resistance values, the dopant concentration in the source-drain areas has to be continuously increased. A possible technological way to meet the junction depth and abruptness requirements is to use co-implantation of non doping species with classical implantations, especially for light ions as B or P.In order to clarify the complex interactions occurring during these co-implantation processes, we have performed an extensive experimental study of the effect of Ge, F, N, C and their combinations on boron. A special interest was given to the overall integration issues. We will show that it is required to optimize the respective locations of co-implanted species with respect to the B profiles (more precisely the ion implantation damage locations), as well as the co-implanted species doses, to get an acceptable compromise between the efficient diffusion decrease required for the junction abruptness and depth, and a reasonable current leakages.

Sign in / Sign up

Export Citation Format

Share Document