Integrating Biomaterials into Microsystems: Formation and Characterization of Nanostructured Titania

2004 ◽  
Vol 820 ◽  
Author(s):  
Zuruzi Abu Samah ◽  
Blaine C. Butler ◽  
Emily R. Parker ◽  
Ayesha Ahmed ◽  
Heather M. Evans ◽  
...  

AbstractWe demonstrate the facile fabrication of crack-free nanostructured crystalline titania into microsystems. Titania layers were formed by reacting Ti thin films, deposited by evaporation and sputtering, with aqueous H202. Cracks were observed in titania layers formed on blanket Ti films but absent on arrays of patterned Ti pads below a threshold dimension. Nanostructured titania formed from sputtered and evaporated Ti films consists of aligned fibrous and sponge-like nanoporous morphologies, respectively. Rat fibroblasts L-cells cultured on these titania fibers remain viable up to 3 days. These observations demonstrate the feasibility of this technique to integrate nanostructured titania into Nano|Micro-Electromechanical systems (N|MEMS) devices.

2017 ◽  
Vol 137 (1) ◽  
pp. 46-47
Author(s):  
Takeshi Kohno ◽  
Masato Mihara ◽  
Ataru Tanabe ◽  
Takashi Abe ◽  
Masanori Okuyama ◽  
...  

2008 ◽  
Vol 14 (S3) ◽  
pp. 85-86
Author(s):  
R.M.S. Martins ◽  
A. Mücklich ◽  
N. Schell ◽  
R.J.C. Silva ◽  
K.K. Mahesh ◽  
...  

Ni-Ti Shape Memory Alloys (SMAs) have been attracting attention as smart materials because they can work as sensors and actuators at the same time. Miniaturization of mechanical devices is evolving toward sub-micron dimensions raising important questions in the properties of Ni-Ti films. In thin films it is essential to investigate the microstructure to understand the origin of the thickness limit. The design of functionally graded films has also been considered but for their successful development it is important to characterize the variations in crystalline structure.


Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 23
Author(s):  
Corina Bîrleanu ◽  
Marius Pustan ◽  
Florina Șerdean ◽  
Violeta Merie

Nanotribological studies of thin films are needed to develop a fundamental understanding of the phenomena that occur to the interface surfaces that come in contact at the micro and nanoscale and to study the interfacial phenomena that occur in microelectromechanical systems (MEMS/NEMS) and other applications. Atomic force microscopy (AFM) has been shown to be an instrument capable of investigating the nanomechanical behavior of many surfaces, including thin films. The measurements of tribo-mechanical behavior for MEMS materials are essential when it comes to designing and evaluating MEMS devices. A great deal of research has been conducted to evaluate the efficiency and reliability of different measurements methods for mechanical properties of MEMS material; nevertheless, the technologies regarding manufacturing and testing MEMS materials are not fully developed. The objectivesof this study are to focus on the review of the mechanical and tribological advantages of thin film and to highlight the experimental results of some thin films to obtain quantitative analyses, the elastic/plastic response and the nanotribological behavior. The slight fluctuation of the results for common thin-film materials is most likely due to the lack of international standardization for MEMS materials and for the methods used to measure their properties.


2012 ◽  
Vol 51 ◽  
pp. 09LD12 ◽  
Author(s):  
Kensuke Kanda ◽  
Junichi Inoue ◽  
Takashi Saito ◽  
Takayuki Fujita ◽  
Kohei Higuchi ◽  
...  

Author(s):  
E. Bassiachvili ◽  
P. Nieva ◽  
A. Khajepour

Information on material properties of structural thin films for MEMS fabrication is very limited. The small information available in the literature suggests that the Young’s modulus of structural thin films such as polysilicon can change up to 30% with heavy doping at room temperature. Accurate knowledge of these variations is critical for proper design as well as operation of MEMS devices, especially for applications that require them to be exposed to harsh environmental conditions. In this paper, devices for the on-chip characterization of the Young’s modulus of polysilicon as a function of the doping concentration conditions are presented. Analytical modeling has been performed to predict the change in the devices’ pull-in voltage as a function of doping concentration. The devices were fabricated using the PolyMUMPs process on two different polysilicon layers on the same chip separated by a layer of oxide. The top layer devices are heavily doped while the bottom layer devices are left lightly doped. The lightly doped devices serve as a reference, allowing some account for fabrication uncertainties in order to ensure consistent results. Devices for measuring in-plane stresses, out-of-plane stress gradients and specially designed resistor structures that account for the effect of contact resistance have also been fabricated to monitor these quantities while testing. The devices will be tested using a customized vacuum chamber to study the effect of phosphorus concentration on these structures.


2005 ◽  
Vol 876 ◽  
Author(s):  
Diana M. DeRosa ◽  
Abu Samah Zuruzi ◽  
Noel C. MacDonald

AbstractOne promising route to integrate nanostructured titania (NST) into nano/micro electrical mechanical systems (N/MEMS) devices is by reacting Ti films with aqueous hydrogen peroxide (aq. H2O2) solution. However, little is known about the reaction kinetics between aq. H2O2 and Ti thin films. Here, the effect of Ti microstructure and film thickness on kinetics of reaction was investigated. For films less than 50 nm thick, the kinetics is interface-reaction controlled. For thicker films, the reaction is controlled by diffusion through a hydrated titania gel layer. Activation energies of these kinetics were extracted. Pore size of NST is affected by thickness of parent Ti films. Depending on thickness of parent Ti films, NST with average pore sizes ranging from 15 nm to 150 nm was formed. The ability to form integrated porous NST features with controllable pore sizes may have implications on the development of devices for drug delivery and macromolecular separation.


Author(s):  
V. Ganesh ◽  
Yugandhar Bitla ◽  
L. Haritha ◽  
Mohd. Shkir ◽  
S. AlFaify

Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.


2001 ◽  
Vol 121 (3) ◽  
pp. 124-128
Author(s):  
Zhan-Jie Wang ◽  
Wen-Mei Lin ◽  
Ryutaro Maeda

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